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1. 发明授权

US07989766B2 Sample inspection apparatus 有权
标题翻译：样品检验仪
公开(公告)号：US07989766B2
公开(公告)日：2011-08-02
申请号：US12416914
申请日：2009-04-01
申请人： Yasuhiko Nara , Tohru Ando , Masahiro Sasajima , Tsutomu Saito , Tomoharu Obuki , Isamu Sekihara
发明人： Yasuhiko Nara , Tohru Ando , Masahiro Sasajima , Tsutomu Saito , Tomoharu Obuki , Isamu Sekihara
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J2237/24495 , H01J2237/24564 , H01J2237/24592 , H01J2237/2803
摘要： A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.
摘要翻译：可以有效地测量和分析半导体样品中的故障的样本检查装置。使多个探针与样品接触。用电子束照射样品，同时测量流过探针的电流。来自至少两个探针的信号被提供给图像处理单元，以形成吸收的电子流图像。获得根据样品的温度变化获得的图像之间的差异。根据图像之间的差异来识别错误点。

2. 发明申请

US20090250610A1 SAMPLE INSPECTION APPARATUS 有权
标题翻译：样品检验仪
公开(公告)号：US20090250610A1
公开(公告)日：2009-10-08
申请号：US12416914
申请日：2009-04-01
申请人： Yasuhiko NARA , Tohru ANDO , Masahiro SASAJIMA , Tsutomu SAITO , Tomoharu OBUKI , Isamu SEKIHARA
发明人： Yasuhiko NARA , Tohru ANDO , Masahiro SASAJIMA , Tsutomu SAITO , Tomoharu OBUKI , Isamu SEKIHARA
IPC分类号： G01N23/00
CPC分类号： H01J37/28 , H01J2237/24495 , H01J2237/24564 , H01J2237/24592 , H01J2237/2803
摘要： A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.
摘要翻译：可以有效地测量和分析半导体样品中的故障的样本检查装置。使多个探针与样品接触。用电子束照射样品，同时测量流过探针的电流。来自至少两个探针的信号被提供给图像处理单元，以形成吸收的电子流图像。获得根据样品的温度变化获得的图像之间的差异。根据图像之间的差异来识别错误点。

3. 发明申请

US20090224788A1 APPARATUS FOR DETECTING DEFECT 有权
标题翻译：检测缺陷的装置
公开(公告)号：US20090224788A1
公开(公告)日：2009-09-10
申请号：US12370915
申请日：2009-02-13
申请人： Masahiro Sasajima , Hiroyuki Suzuki
发明人： Masahiro Sasajima , Hiroyuki Suzuki
IPC分类号： G01R1/067 , G01R31/02
CPC分类号： G01R31/2891 , G01R31/307 , H01J37/20 , H01J37/28 , H01J2237/2001 , H01J2237/2065 , H01J2237/24564
摘要： The present invention provides an apparatus for detecting defect capable of measuring temperature characteristics of a semiconductor sample without restrictions in the movement range of a sample stage and a probe device by a temperature control device. A heater 55 heats a sample stage, and the sample stage is cooled by a refrigerant contained in a refrigerant container 38 through a heat transfer line 34 connected to the sample stage, a heat receiving portion 36A connected to the heat transfer line 34, a heat receiving portion 36B that is detachable from the heat receiving portion 36A, a heat transfer line 35 connected to the heat receiving portion 36A, and a heat transfer rod 37 connected to the heat transfer line 35, thereby adjusting the temperature of a semiconductor sample 25 held by the sample stage. The heat receiving portion 36A and the heat receiving portion 36B are separated from each other to release the restriction of the sample stage and a probe device such that the sample stage and the probe device can be moved in a sample chamber 30.
摘要翻译：本发明提供一种用于检测能够通过温度控制装置在样品台和探针装置的移动范围内不受限制地测量半导体样品的温度特性的缺陷的装置。加热器55加热样品台，并且通过连接到样品台的传热管线34，连接到传热管线34的热接收部分36A，热传递管线34中的热量接收部分36A，由制冷剂容器38中包含的制冷剂冷却样品台与热接收部分36A分离的接收部分36B，连接到受热部分36A的传热线35和连接到传热管线35的传热杆37，从而调节保持的半导体样品25的温度通过抽样阶段热接收部36A和受热部36B彼此分离以释放样品台和探针装置的限制，使得样品台和探针装置可以在样品室30中移动。

4. 发明授权

US08816712B2 Inspection device 有权
标题翻译：检查装置
公开(公告)号：US08816712B2
公开(公告)日：2014-08-26
申请号：US13058158
申请日：2009-07-29
申请人： Mitsuhiro Nakamura , Hiroshi Toyama , Yasuhiko Nara , Katsuo Oki , Tomoharu Obuki , Masahiro Sasajima
发明人： Mitsuhiro Nakamura , Hiroshi Toyama , Yasuhiko Nara , Katsuo Oki , Tomoharu Obuki , Masahiro Sasajima
IPC分类号： G01R31/00 , H01J37/20 , G01R31/307 , H01J37/28 , G01R31/28
CPC分类号： G01R31/307 , G01R31/2853 , H01J37/20 , H01J37/28 , H01J2237/2008 , H01J2237/24564
摘要： An object of the invention is to provide an inspection device which has a function of preventing electric discharge so that an absorbed current is detected more efficiently.In the invention, absorbed current detectors are mounted in a vacuum specimen chamber and capacitance of a signal wire from each probe to corresponding one of the absorbed current detectors is reduced to the order of pF so that even an absorbed current signal with a high frequency of tens of kHz or higher can be detected. Moreover, signal selectors are operated by a signal selection controller so that signal lines of a semiconductor parameters analyzer are electrically connected to the probes brought into contact with a sample. Accordingly, electrical characteristics of the sample can be measured without limitation of signal paths connected to the probes to transmission of an absorbed current. In addition, a resistance for slow leakage of electric charge is provided in each probe stage or a sample stage.
摘要翻译：本发明的目的是提供一种检测装置，其具有防止放电的功能，从而更有效地检测吸收的电流。在本发明中，将吸收电流检测器安装在真空试样室中，并将来自每个探针的信号线的电容与吸收的电流检测器中的相应一个电容器的电容降低到pF的顺序，使得甚至具有高频率的吸收电流信号可以检测几十kHz或更高。此外，信号选择器由信号选择控制器操作，使得半导体参数分析仪的信号线电连接到与样品接触的探针。因此，可以测量样品的电特性，而不限制连接到探针的信号路径以传输吸收的电流。此外，在每个探针级或样品台中提供电荷缓慢泄漏的电阻。

5. 发明申请

US20110291009A1 SEMICONDUCTOR INSPECTION METHOD AND DEVICE THAT CONSIDER THE EFFECTS OF ELECTRON BEAMS 有权
标题翻译：半导体检测方法和考虑电子束影响的器件
公开(公告)号：US20110291009A1
公开(公告)日：2011-12-01
申请号：US13148205
申请日：2010-01-20
申请人： Tohru Ando , Masahiro Sasajima
发明人： Tohru Ando , Masahiro Sasajima
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01L22/10 , G01R31/307 , H01J37/244 , H01J37/28 , H01J2237/24564 , H01J2237/24592 , H01J2237/2817
摘要： Disclosed is a device capable of probing with minimal effect from electron beams. Rough probing is made possible using a lower magnification than the magnification usually viewed. When target contact of semiconductor is detected, measurement position is set in the center of picture usually to move probe without moving stage. With the miniaturization, contact can be confirmed only at high magnification, although probe can be confirmed at low magnification on the contrary but it is necessary to display it in real time. Static image obtained at high magnification once is combined with image obtained at low magnification in real time from target contact required for probing and characteristic of probe to be displayed, so that probing at low magnification can be realized to reduce the effects of electron beams and obtain accurate electrical characteristics.
摘要翻译：公开了一种能够以电子束影响最小的装置。使用比通常观看的放大率更低的放大倍数可以进行粗略探测。当检测到半导体的目标接触时，通常将测量位置设置在图像中心，无需移动平台移动探头。随着小型化，只能在高放大倍率下确认接触，尽管可以在低放大倍率下确认探针，但需要实时显示。以高放大倍数一次获得的静态图像与实验中从目标探针所需的接触和探针的特性实时地获得的图像组合，从而可以实现低倍率下的探测，以减少电子束的影响并获得准确的电气特性。

6. 发明申请

US20080149848A1 Sample Inspection Apparatus and Sample Inspection Method 审中-公开
标题翻译：样品检验仪器和样品检验方法
公开(公告)号：US20080149848A1
公开(公告)日：2008-06-26
申请号：US11961348
申请日：2007-12-20
申请人： Hiroyuki Suzuki , Masahiro Sasajima
发明人： Hiroyuki Suzuki , Masahiro Sasajima
IPC分类号： G01N23/00
CPC分类号： G01R31/307
摘要： The present invention provides an inspection apparatus capable of suppressing leak electric current to a specimen and a probe, and thus capable of measuring highly sensitive electrical characteristics, when the specimen is heated by a heater. A specimen heating unit that heats a specimen is configured of: a heater; a grounded metallic shield, which coats the heater as electrically insulated; and an insulation sheet disposed on a side of the metallic shield facing the mounted specimen. Likewise, a probe heating unit is configured of: a heater; a grounded metallic shield, which coats the heater as electrically insulated; and an insulation sheet.
摘要翻译：本发明提供一种检测装置，其能够通过加热器对样本进行加热时，能够抑制对试样和探针的泄漏电流，能够测定高灵敏度的电气特性。加热试样的试样加热单元由加热器构成，一个接地的金属屏蔽层，它将加热器涂覆为电绝缘; 以及设置在面向安装的样品的金属屏蔽的一侧上的绝缘片。同样地，探针加热单元构成为：加热器; 一个接地的金属屏蔽层，它将加热器涂覆为电绝缘; 和绝缘片。

7. 发明授权

US08309922B2 Semiconductor inspection method and device that consider the effects of electron beams 有权
标题翻译：考虑电子束影响的半导体检查方法和装置
公开(公告)号：US08309922B2
公开(公告)日：2012-11-13
申请号：US13148205
申请日：2010-01-20
申请人： Tohru Ando , Masahiro Sasajima
发明人： Tohru Ando , Masahiro Sasajima
IPC分类号： H01J37/28 , G01N23/00
CPC分类号： H01L22/10 , G01R31/307 , H01J37/244 , H01J37/28 , H01J2237/24564 , H01J2237/24592 , H01J2237/2817
摘要： Disclosed is a device capable of probing with minimal effect from electron beams. Rough probing is made possible using a lower magnification than the magnification usually viewed. When target contact of semiconductor is detected, measurement position is set in the center of picture usually to move probe without moving stage. With the miniaturization, contact can be confirmed only at high magnification, although probe can be confirmed at low magnification on the contrary but it is necessary to display it in real time. Static image obtained at high magnification once is combined with image obtained at low magnification in real time from target contact required for probing and characteristic of probe to be displayed, so that probing at low magnification can be realized to reduce the effects of electron beams and obtain accurate electrical characteristics.
摘要翻译：公开了一种能够以电子束影响最小的装置。使用比通常观看的放大率更低的放大倍数可以进行粗略探测。当检测到半导体的目标接触时，通常将测量位置设置在图像中心，无需移动平台移动探头。随着小型化，只能在高放大倍率下确认接触，尽管可以在低放大倍率下确认探针，但需要实时显示。以高放大倍数一次获得的静态图像与实验中从目标探针所需的接触和探针的特性实时地获得的图像组合，从而可以实现低倍率下的探测，以减少电子束的影响并获得准确的电气特性。

8. 发明申请

US20110140729A1 INSPECTION DEVICE 有权
标题翻译：检查装置
公开(公告)号：US20110140729A1
公开(公告)日：2011-06-16
申请号：US13058158
申请日：2009-07-29
申请人： Mitsuhiro Nakamura , Hiroshi Toyama , Yasuhiko Nara , Katsuo Oki , Tomoharu Obuki , Masahiro Sasajima
发明人： Mitsuhiro Nakamura , Hiroshi Toyama , Yasuhiko Nara , Katsuo Oki , Tomoharu Obuki , Masahiro Sasajima
IPC分类号： G01R31/26 , G21K5/08
CPC分类号： G01R31/307 , G01R31/2853 , H01J37/20 , H01J37/28 , H01J2237/2008 , H01J2237/24564
摘要： An object of the invention is to provide an inspection device which has a function of preventing electric discharge so that an absorbed current is detected more efficiently.In the invention, absorbed current detectors are mounted in a vacuum specimen chamber and capacitance of a signal wire from each probe to corresponding one of the absorbed current detectors is reduced to the order of pF so that even an absorbed current signal with a high frequency of tens of kHz or higher can be detected. Moreover, signal selectors are operated by a signal selection controller so that signal lines of a semiconductor parameters analyzer are electrically connected to the probes brought into contact with a sample. Accordingly, electrical characteristics of the sample can be measured without limitation of signal paths connected to the probes to transmission of an absorbed current. In addition, a resistance for slow leakage of electric charge is provided in each probe stage or a sample stage.
摘要翻译：本发明的目的是提供一种检测装置，其具有防止放电的功能，从而更有效地检测吸收的电流。在本发明中，将吸收电流检测器安装在真空试样室中，并将来自每个探针的信号线的电容与吸收的电流检测器中的相应一个电容器的电容降低到pF的顺序，使得甚至具有高频率的吸收电流信号可以检测几十kHz或更高。此外，信号选择器由信号选择控制器操作，使得半导体参数分析仪的信号线电连接到与样品接触的探针。因此，可以测量样品的电特性，而不限制连接到探针的信号路径以传输吸收的电流。此外，在每个探针级或样品台中提供电荷缓慢泄漏的电阻。

9. 发明授权

US07932733B2 Apparatus for detecting defect by examining electric characteristics of a semiconductor device 有权
标题翻译：通过检查半导体器件的电特性来检测缺陷的装置
公开(公告)号：US07932733B2
公开(公告)日：2011-04-26
申请号：US12370915
申请日：2009-02-13
申请人： Masahiro Sasajima , Hiroyuki Suzuki
发明人： Masahiro Sasajima , Hiroyuki Suzuki
IPC分类号： G01R31/00 , G01R31/10
CPC分类号： G01R31/2891 , G01R31/307 , H01J37/20 , H01J37/28 , H01J2237/2001 , H01J2237/2065 , H01J2237/24564
摘要： An exemplary apparatus for detecting defect is capable of measuring temperature characteristics of a semiconductor sample without restrictions in the movement range of a sample stage and a probe device by a temperature control device. A heater heats a sample stage, and the sample stage is cooled by a refrigerant contained in a refrigerant container through a heat transfer line connected to the sample stage, a first heat receiving portion connected to the heat transfer line, a second heat receiving portion that is detachable from the heat receiving portion, a heat transfer line connected to the heat receiving portion, and a heat transfer rod connected to the heat transfer line, thereby adjusting the temperature of a semiconductor sample held by the sample stage. The heat receiving portions are separated from each other to release the restriction of the sample stage and a probe device such that the sample stage and the, probe device can be moved in a sample chamber.
摘要翻译：用于检测缺陷的示例性装置能够通过温度控制装置来测量半导体样品的温度特性，而不受样品台和探针装置的移动范围的限制。加热器加热样品台，并且通过连接到样品台的传热线，连接到传热线的第一热接收部分，由容纳在制冷剂容器中的制冷剂冷却样品台，第二受热部分，可从热接收部分拆卸，连接到热接收部分的传热线和连接到传热线的传热杆，从而调节由样品台保持的半导体样品的温度。热接收部彼此分离以释放样品台和探针装置的限制，使得样品台和探针装置可以在样品室中移动。

10. 外观设计

USD578655S1 Sample holder 有权
公开(公告)号：USD578655S1
公开(公告)日：2008-10-14
申请号：US29304373
申请日：2008-02-29
申请人： Hiroyuki Suzuki , Masahiro Sasajima
设计人： Hiroyuki Suzuki , Masahiro Sasajima

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