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1. 发明授权

US09041006B2 Silicon carbide MOS semiconductor device 有权
标题翻译：碳化硅MOS半导体器件
公开(公告)号：US09041006B2
公开(公告)日：2015-05-26
申请号：US12409964
申请日：2009-03-24
申请人： Shun-ichi Nakamura , Yoshiyuki Yonezawa , Masahide Gotoh
发明人： Shun-ichi Nakamura , Yoshiyuki Yonezawa , Masahide Gotoh
IPC分类号： H01L29/15 , H01L29/66 , H01L21/04 , H01L29/08 , H01L29/78 , H01L29/861 , H01L29/06 , H01L29/16 , H01L29/423
CPC分类号： H01L29/7813 , H01L21/046 , H01L29/0623 , H01L29/086 , H01L29/0878 , H01L29/1608 , H01L29/4236 , H01L29/42368 , H01L29/6606 , H01L29/66068 , H01L29/8613
摘要： A silicon carbide MOS semiconductor device is disclosed which suppresses degradation of efficiency percentage yield with respect to a breakdown voltage even when a surface region with a high impurity concentration is formed by ion implantation with such a high dose as required for attaining a good ohmic contact. The device has a silicon carbide semiconductor substrate, a voltage blocking layer of a first conductivity type formed on the substrate, a body region of a second conductivity type formed on the voltage blocking layer, a body contact region of the second conductivity type formed in a surface region of the body region by selective ion implantation, a surface of the body contact region having such a high impurity concentration as to impart an ohmic contact, a source contact region of the first conductivity type formed in a surface region of the body region by selective ion implantation, a surface of the source contact region having such a high impurity concentration as to impart an ohmic contact, and a source extension region with an impurity concentration lower than that in the source contact region under the source contact region at a region deeper than a tail part of a bottom region of the source contact region by selective ion implantation, the source extension region having an impurity concentration less than 3×1019 cm−3.
摘要翻译：公开了一种碳化硅MOS半导体器件，其即使当通过以达到良好的欧姆接触所需的高剂量的离子注入形成具有高杂质浓度的表面区域时，也可以相对于击穿电压降低效率百分比。该器件具有碳化硅半导体衬底，形成在衬底上的第一导电类型的电压阻挡层，形成在电压阻挡层上的第二导电类型的体区，形成在第二导电类型的体接触区通过选择性离子注入，体区域的表面区域，具有如此高的杂质浓度以产生欧姆接触的体接触区域的表面，在身体区域的表面区域中形成的第一导电类型的源极接触区域由选择性离子注入，源极接触区域的表面具有如此高的杂质浓度以施加欧姆接触，以及源极延伸区域，其源极延伸区域的杂质浓度低于在源极接触区域下的源极接触区域中的杂质浓度比源极接触区域的底部区域的尾部通过选择性离子注入，源极延伸区域具有杂质浓度小于3×1019 cm-3。

2. 发明申请

US20090236612A1 SILICON CARBIDE MOS SEMICONDUCTOR DEVICE 有权
标题翻译：硅碳化硅半导体器件
公开(公告)号：US20090236612A1
公开(公告)日：2009-09-24
申请号：US12409964
申请日：2009-03-24
申请人： Shun-ichi Nakamura , Yoshiyuki Yonezawa , Masahide Gotoh
发明人： Shun-ichi Nakamura , Yoshiyuki Yonezawa , Masahide Gotoh
IPC分类号： H01L29/161
CPC分类号： H01L29/7813 , H01L21/046 , H01L29/0623 , H01L29/086 , H01L29/0878 , H01L29/1608 , H01L29/4236 , H01L29/42368 , H01L29/6606 , H01L29/66068 , H01L29/8613
摘要： A silicon carbide MOS semiconductor device is disclosed which suppresses degradation of efficiency percentage yield with respect to a breakdown voltage even when a surface region with a high impurity concentration is formed by ion implantation with such a high dose as required for attaining a good ohmic contact. The device has a silicon carbide semiconductor substrate, a voltage blocking layer of a first conductivity type formed on the substrate, a body region of a second conductivity type formed on the voltage blocking layer, a body contact region of the second conductivity type formed in a surface region of the body region by selective ion implantation, a surface of the body contact region having such a high impurity concentration as to impart an ohmic contact, a source contact region of the first conductivity type formed in a surface region of the body region by selective ion implantation, a surface of the source contact region having such a high impurity concentration as to impart an ohmic contact, and a source extension region with an impurity concentration lower than that in the source contact region under the source contact region at a region deeper than a tail part of a bottom region of the source contact region by selective ion implantation, the source extension region having an impurity concentration less than 3×1019 cm−3.
摘要翻译：公开了一种碳化硅MOS半导体器件，其即使当通过以达到良好的欧姆接触所需的高剂量的离子注入形成具有高杂质浓度的表面区域时，也可以相对于击穿电压降低效率百分比。该器件具有碳化硅半导体衬底，形成在衬底上的第一导电类型的电压阻挡层，形成在电压阻挡层上的第二导电类型的体区，形成在第二导电类型的体接触区通过选择性离子注入，体区域的表面区域，具有如此高的杂质浓度以产生欧姆接触的体接触区域的表面，在身体区域的表面区域中形成的第一导电类型的源极接触区域由选择性离子注入，源极接触区域的表面具有如此高的杂质浓度以施加欧姆接触，以及源极延伸区域，其源极延伸区域的杂质浓度低于在源极接触区域下的源极接触区域中的杂质浓度比源极接触区域的底部区域的尾部通过选择性离子注入，源极延伸区域具有杂质浓度小于3×1019 cm-3。

3. 发明授权

US09117681B2 Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device 有权
标题翻译：碳化硅半导体元件及其制造方法以及碳化硅器件
公开(公告)号：US09117681B2
公开(公告)日：2015-08-25
申请号：US13346864
申请日：2012-01-10
申请人： Yasuyuki Kawada , Takeshi Tawara , Shun-ichi Nakamura , Masahide Gotoh
发明人： Yasuyuki Kawada , Takeshi Tawara , Shun-ichi Nakamura , Masahide Gotoh
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/04 , H01L29/16 , H01L29/66
CPC分类号： H01L21/0485 , H01L29/1608 , H01L29/66068
摘要： A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.
摘要翻译：公开了一种碳化硅半导体元件及其制造方法，其中在电极膜和布线导体元件之间获得低接触电阻，并且布线导体元件几乎不与电极膜分离。在该方法中，将镍膜和氧化镍膜依次层叠在碳化硅基板的n型碳化硅基板或n型碳化硅区域的表面上，然后在非碳化硅基板氧化条件。热处理将镍膜的一部分转变成硅化镍膜。然后，用盐酸溶液除去氧化镍膜，然后依次将镍铝膜和铝膜层叠在硅化镍膜的表面上。

4. 发明申请

US20120104417A1 SILICON CARBIDE SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE SAME, AND SILICON CARBIDE DEVICE 有权
标题翻译：硅碳化硅半导体元件及其制造方法和碳化硅器件
公开(公告)号：US20120104417A1
公开(公告)日：2012-05-03
申请号：US13346864
申请日：2012-01-10
申请人： Yasuyuki KAWADA , Takeshi TAWARA , Shun-ichi NAKAMURA , Masahide GOTOH
发明人： Yasuyuki KAWADA , Takeshi TAWARA , Shun-ichi NAKAMURA , Masahide GOTOH
IPC分类号： H01L29/24
CPC分类号： H01L21/0485 , H01L29/1608 , H01L29/66068
摘要： A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.
摘要翻译：公开了一种碳化硅半导体元件及其制造方法，其中在电极膜和布线导体元件之间获得低接触电阻，并且布线导体元件几乎不与电极膜分离。在该方法中，将镍膜和氧化镍膜依次层叠在碳化硅基板的n型碳化硅基板或n型碳化硅区域的表面上，然后在非碳化硅基板氧化条件。热处理将镍膜的一部分转变成硅化镍膜。然后，用盐酸溶液除去氧化镍膜，然后依次将镍铝膜和铝膜层叠在硅化镍膜的表面上。

5. 发明申请

US20090045414A1 SILICON CARBIDE SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE SAME, AND SILICON CARBIDE DEVICE 有权
标题翻译：硅碳化硅半导体元件及其制造方法和碳化硅器件
公开(公告)号：US20090045414A1
公开(公告)日：2009-02-19
申请号：US12193291
申请日：2008-08-18
申请人： Yasuyuki KAWADA , Takeshi TAWARA , Shun-ichi NAKAMURA , Masahide GOTOH
发明人： Yasuyuki KAWADA , Takeshi TAWARA , Shun-ichi NAKAMURA , Masahide GOTOH
IPC分类号： H01L29/24 , H01L21/44
CPC分类号： H01L21/0485 , H01L29/1608 , H01L29/66068
摘要： A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.
摘要翻译：公开了一种碳化硅半导体元件及其制造方法，其中在电极膜和布线导体元件之间获得低接触电阻，并且布线导体元件几乎不与电极膜分离。在该方法中，将镍膜和氧化镍膜依次层叠在碳化硅基板的n型碳化硅基板或n型碳化硅区域的表面上，然后在非碳化硅基板氧化条件。热处理将镍膜的一部分转变成硅化镍膜。然后，用盐酸溶液除去氧化镍膜，然后依次将镍铝膜和铝膜层叠在硅化镍膜的表面上。

6. 发明授权

US08114783B2 Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device 有权
标题翻译：碳化硅半导体元件及其制造方法以及碳化硅器件
公开(公告)号：US08114783B2
公开(公告)日：2012-02-14
申请号：US12193291
申请日：2008-08-18
申请人： Yasuyuki Kawada , Takeshi Tawara , Shun-ichi Nakamura , Masahide Gotoh
发明人： Yasuyuki Kawada , Takeshi Tawara , Shun-ichi Nakamura , Masahide Gotoh
IPC分类号： H01L31/0312
CPC分类号： H01L21/0485 , H01L29/1608 , H01L29/66068
摘要： A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.
摘要翻译：公开了一种碳化硅半导体元件及其制造方法，其中在电极膜和布线导体元件之间获得低接触电阻，并且布线导体元件几乎不与电极膜分离。在该方法中，将镍膜和氧化镍膜依次层叠在碳化硅基板的n型碳化硅基板或n型碳化硅区域的表面上，然后在非碳化硅基板氧化条件。热处理将镍膜的一部分转变成硅化镍膜。然后，用盐酸溶液除去氧化镍膜，然后依次将镍铝膜和铝膜层叠在硅化镍膜的表面上。

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