会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 8. 发明申请
    • Container
    • 容器
    • US20100276439A1
    • 2010-11-04
    • US12766467
    • 2010-04-23
    • Martin Price
    • Martin Price
    • E05C3/06E05B1/00B65D43/16
    • B02C19/0075Y10T292/108
    • A container (20) having an opening, a lid (10) pivotally mounted on the container (2) and movable to open and close the opening, a lid latch assembly (100) mounted on the lid (8), the lid latch assembly (100) and container (2) having cooperating engagement portions by which the lid (10) can be held while the opening in the container (2) is closed, the lid latch assembly (100) having a handle (114) by which the lid (10) can be manually pivoted to engage the cooperating engagement portions whilst storing energy in a spring (126) in the lid latch assembly (100), the handle (114) being manually moveable to cause the cooperating engagement portions to disengage and so allow the lid (10) to move to open the opening and an electrical solenoid (121) which can be activated to cause the cooperating engagement means to disengage under the action of the spring (126) in which energy was stored on closing the lid (10). The present invention provides a container with a lid latch assembly which is electrically operable and which can also be manually opened if required or preferred.
    • 具有开口的容器(20),可枢转地安装在容器(2)上并可移动以打开和关闭开口的盖子(10),安装在盖子(8)上的盖子锁定组件(100) (100)和具有配合接合部分的容器(2),通过该配合接合部分,当容器(2)中的开口关闭时,盖(10)能够被保持,盖闩锁组件(100)具有手柄(114) 盖(10)可以手动地枢转以接合协作接合部分,同时将能量存储在盖闩锁组件(100)中的弹簧(126)中,手柄(114)可手动地移动以使配合接合部分脱离 允许盖(10)移动以打开开口和电螺线管(121),电螺线管(121)可被启动以使配合接合装置在弹簧(126)的作用下脱离,在闭合盖子时存储能量 10)。 本发明提供了一种具有盖闩锁组件的容器,其可电操作并且如果需要或优选也可以手动打开。
    • 9. 发明授权
    • Methods and systems for determining trapped charge density in films
    • 用于确定膜中俘获电荷密度的方法和系统
    • US07595204B2
    • 2009-09-29
    • US11464884
    • 2006-08-16
    • James Martin Price
    • James Martin Price
    • H01L21/66
    • G01N21/211G01N2021/213H01L22/14H01L2924/0002H01L2924/00
    • Methods and systems for determining a charge trap density between a semiconductor material and a dielectric material are disclosed. In one respect, spectroscopic data of the semiconductor material may be determined and used to determine a change in dielectric function. A line shape fit of the change in the dielectric function may be applied using derivative function form. The amplitude of the line shape fit may be determined and used to determine an electric field of a space charge region of the semiconductor material. By applying Poisson's equations, the scalar potential due to the electric field in the space charge region may be determined. Subsequently, using the scalar potential the charge trap density may be determined.
    • 公开了用于确定半导体材料和电介质材料之间的电荷陷阱密度的方法和系统。 在一个方面,半导体材料的光谱数据可以被确定并用于确定介电函数的变化。 可以使用导数函数形式应用介电函数变化的线形拟合。 可以确定线形拟合的幅度并用于确定半导体材料的空间电荷区域的电场。 通过应用泊松方程,可以确定由空间电荷区域中的电场引起的标量电位。 随后,使用标量电位可以确定电荷陷阱密度。
    • 10. 发明授权
    • Methods and systems for characterizing semiconductor materials
    • 表征半导体材料的方法和系统
    • US07580138B2
    • 2009-08-25
    • US11179357
    • 2005-07-12
    • James Martin Price
    • James Martin Price
    • G01B11/28
    • H01L22/12H01L2924/0002H01L2924/00
    • Methods for determining parameters of a semiconductor material, in particular non-classical substrates such as silicon-on-insulator (SOI) substrates, strained silicon-on-insulator (sSOI) substrates, silicon-germanium-on-insulator (GOI) substrates, and strained silicon-germanium-on-insulator (sGeOI) substrates. The method provides steps for transforming data corresponding to the semiconductor material from real space to reciprocal space. The critical points are isolated in the reciprocal state and corresponding critical energies of the critical points are determined. The difference between the critical energies may be used to determine a thickness of a layer of the semiconductor material, in particular, a quantum confined layer.
    • 用于确定半导体材料的参数的方法,特别是诸如绝缘体上硅(SOI)衬底,应变绝缘体上硅(sSOI)衬底,绝缘体上硅锗(GOI)衬底, 和应变硅 - 绝缘体上硅(sGeOI)衬底。 该方法提供用于将对应于半导体材料的数据从实际空间转换为互惠空间的步骤。 关键点在互逆状态下被隔离,确定临界点的相应临界能量。 临界能量之间的差异可用于确定半导体材料的层的厚度,特别是量子限制层。