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1. 发明申请

US20070217271A1 Variable reference voltage circuit for non-volatile memory 有权
标题翻译：用于非易失性存储器的可变参考电压电路
公开(公告)号：US20070217271A1
公开(公告)日：2007-09-20
申请号：US11385235
申请日：2006-03-20
申请人： Harold Kutz , Mark Rouse , Eric Blom
发明人： Harold Kutz , Mark Rouse , Eric Blom
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G11C16/30
摘要： A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.
摘要翻译：用于在非易失性存储器上执行存储器操作的可变参考电压电路包括多电平电压源和选择器电路。多电平电压源产生多个电压。选择器电路包括选择器输入和选择器输出。选择器输入耦合到多电平电压源以选择性地将多个电压中的任一个耦合到选择器输出。选择器电路的选择器输出耦合到非易失性存储器阵列，以向NV存储器阵列提供用于编程NV存储器阵列的可选择的编程电压和用于擦除NV存储器阵列的可选擦除电压。

2. 发明授权

US06661724B1 Method and system for programming a memory device 有权
标题翻译：用于编程存储器件的方法和系统
公开(公告)号：US06661724B1
公开(公告)日：2003-12-09
申请号：US10172670
申请日：2002-06-13
申请人： Warren Snyder , Mark Rouse
发明人： Warren Snyder , Mark Rouse
IPC分类号： G11C700
CPC分类号： G11C7/04 , G11C7/1045 , G11C16/10
摘要： A method for programming a memory device is disclosed. In one method embodiment, the present invention receives a measurement from a temperature sensor located near a non-volatile programmable memory device. Next, a transformation is accessed. Then, the measurement from the temperature sensor is processed in conjunction with the transformation to establish a programming time for a memory device as a function of a programming voltage and the temperature of the memory device. The programming voltage is then applied to the memory device for the length of time specified by the programming time during the programming pulse of the memory device to accurately program the device using an optimum amount of current.
摘要翻译：公开了一种用于编程存储器件的方法。在一个方法实施例中，本发明从位于非易失性可编程存储器件附近的温度传感器接收测量值。接下来，访问转换。然后，结合转换来处理来自温度传感器的测量结果，以根据编程电压和存储器件的温度建立存储器件的编程时间。然后在存储器件的编程脉冲期间将编程电压施加到存储器件中由编程时间指定的时间长度，以使用最佳电流量精确地编程器件。

3. 发明授权

US08325540B1 Variable reference voltage circuit for non-volatile memory 有权
标题翻译：用于非易失性存储器的可变参考电压电路
公开(公告)号：US08325540B1
公开(公告)日：2012-12-04
申请号：US13118353
申请日：2011-05-27
申请人： Harold Kutz , Mark Rouse , Eric D. Blom
发明人： Harold Kutz , Mark Rouse , Eric D. Blom
IPC分类号： G11C7/00
CPC分类号： G11C5/147 , G11C16/30
摘要： A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.
摘要翻译：用于在非易失性存储器上执行存储器操作的可变参考电压电路包括多电平电压源和选择器电路。多电平电压源产生多个电压。选择器电路包括选择器输入和选择器输出。选择器输入耦合到多电平电压源以选择性地将多个电压中的任一个耦合到选择器输出。选择器电路的选择器输出耦合到非易失性存储器阵列，以向NV存储器阵列提供用于编程NV存储器阵列的可选择的编程电压和用于擦除NV存储器阵列的可选擦除电压。

4. 发明授权

US07586795B2 Variable reference voltage circuit for non-volatile memory 有权
标题翻译：用于非易失性存储器的可变参考电压电路
公开(公告)号：US07586795B2
公开(公告)日：2009-09-08
申请号：US11385235
申请日：2006-03-20
申请人： Harold Kutz , Mark Rouse , Eric D. Blom
发明人： Harold Kutz , Mark Rouse , Eric D. Blom
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G11C16/30
摘要： A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.
摘要翻译：用于在非易失性存储器上执行存储器操作的可变参考电压电路包括多电平电压源和选择器电路。多电平电压源产生多个电压。选择器电路包括选择器输入和选择器输出。选择器输入耦合到多电平电压源以选择性地将多个电压中的任一个耦合到选择器输出。选择器电路的选择器输出耦合到非易失性存储器阵列，以向NV存储器阵列提供用于编程NV存储器阵列的可选择的编程电压和用于擦除NV存储器阵列的可选擦除电压。

5. 发明授权

US06829190B1 Method and system for programming a memory device 有权
标题翻译：用于编程存储器件的方法和系统
公开(公告)号：US06829190B1
公开(公告)日：2004-12-07
申请号：US10653050
申请日：2003-08-29
申请人： Warren Snyder , Mark Rouse
发明人： Warren Snyder , Mark Rouse
IPC分类号： G11C700
CPC分类号： G11C7/04 , G11C7/1045 , G11C16/10
摘要： A method for programming a memory device is disclosed. In one method embodiment, the present invention receives a measurement from a temperature sensor located near a non-volatile programmable memory device. Next, a transformation is accessed. Then, the measurement from the temperature sensor is processed in conjunction with the transformation to establish a programming time for a memory device as a function of a programming voltage and the temperature of the memory device. The programming voltage is then applied to the memory device for the length of time specified by the programming time during the programming pulse of the memory device to accurately program the device using an optimum amount of current.
摘要翻译：公开了一种用于编程存储器件的方法。在一个方法实施例中，本发明从位于非易失性可编程存储器件附近的温度传感器接收测量值。接下来，访问转换。然后，结合转换来处理来自温度传感器的测量结果，以根据编程电压和存储器件的温度建立存储器件的编程时间。然后在存储器件的编程脉冲期间将编程电压施加到存储器件中由编程时间指定的时间长度，以使用最佳电流量精确地编程器件。

6. 发明授权

US07952942B1 Variable reference voltage circuit for non-volatile memory 有权
标题翻译：用于非易失性存储器的可变参考电压电路
公开(公告)号：US07952942B1
公开(公告)日：2011-05-31
申请号：US12539503
申请日：2009-08-11
申请人： Harold Kutz , Mark Rouse , Eric D. Blom
发明人： Harold Kutz , Mark Rouse , Eric D. Blom
IPC分类号： G11C7/00
CPC分类号： G11C5/147 , G11C16/30
摘要： A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.
摘要翻译：用于在非易失性存储器上执行存储器操作的可变参考电压电路包括多电平电压源和选择器电路。多电平电压源产生多个电压。选择器电路包括选择器输入和选择器输出。选择器输入耦合到多电平电压源以选择性地将多个电压中的任一个耦合到选择器输出。选择器电路的选择器输出耦合到非易失性存储器阵列，以向NV存储器阵列提供用于编程NV存储器阵列的可选择的编程电压和用于擦除NV存储器阵列的可选擦除电压。

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