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1. 发明申请

US20080017834A1 CONDUCTIVE POLYMER COMPOSITIONS 失效
标题翻译：导电聚合物组合物
公开(公告)号：US20080017834A1
公开(公告)日：2008-01-24
申请号：US11756985
申请日：2007-06-01
申请人： Hjalti Skulason , Mark Martello , Che-Hsiung Hsu
发明人： Hjalti Skulason , Mark Martello , Che-Hsiung Hsu
IPC分类号： H01B1/12
CPC分类号： H01B1/127 , C08G61/123 , C08L33/16 , C08L65/00 , H01B1/122 , H01B1/124 , H01B1/128 , H01L51/0035 , C08L2666/04
摘要： Electrically conductive polymer compositions are provided. The compositions are dispersed in an aqueous liquid medium having an oxygen content less than 10% of the saturated level. The compositions can be an electrically conductive polymer doped with a fluorinated acid polymer, an electrically conductive polymer in admixture with a fluorinated acid polymer, or mixtures thereof. The conductive polymer composition has a conductivity that changes by less than 10% in 30 days.
摘要翻译：提供导电聚合物组合物。将组合物分散在氧含量低于饱和水平的10％的含水液体介质中。组合物可以是掺杂有氟化酸聚合物的导电聚合物，与氟化酸聚合物混合的导电聚合物，或其混合物。导电聚合物组合物的导电率在30天内变化小于10％。

2. 再颁专利

USRE44853E1 Buffer compositions 有权
标题翻译：缓冲剂组合物
公开(公告)号：USRE44853E1
公开(公告)日：2014-04-22
申请号：US13450142
申请日：2012-04-18
申请人： Che-Hsiung Hsu , Hjalti Skulason , Mark Martello
发明人： Che-Hsiung Hsu , Hjalti Skulason , Mark Martello
IPC分类号： H01B1/12 , H01B1/02
CPC分类号： H01L51/5088 , B82Y20/00 , B82Y30/00 , C08G61/124 , C08G61/126 , C08G73/0266 , C08L65/00 , C08L79/04 , H01L51/442 , H01L2251/305 , H01L2251/306 , H01L2251/5369 , Y02E10/549 , C08L2666/04
摘要： Buffer compositions comprising semiconductive oxide particles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer are provided. Semiconductive oxide particles include metal oxides and bimetallic oxides. Acid polymers are derived from monomers or comonomers of polyolefins, polyacrylates, polymethacrylates, polyimides, polyamides, polyaramides, polyacrylamides, polystrenes. The polymer backbone, side chains, pendant groups or combinations thereof may be fluorinated or highly fluorinated. Semiconductive polymers include polymers or copolymers derived from thiophenes, pyrroles, anilines, and polycyclic heteroaromatics. Methods for preparing buffer compositions are also provided. A buffer composition consisting essentially of semiconductive oxide particles wherein the semiconductive oxide particles comprise a bimetallic oxide selected from indium-tin oxide (“ITO”), indium-zinc oxide (“IZO”), gallium-indium oxide, and zinc-antimony double oxide and a fluorinated acid polymer wherein the fluorinated acid polymer has a formula according to Formula XV: where j≧0, k≧0 and 4≦(j+k)≦199, Q1 and Q2 are F or H, Rf2 is F or a perfluoroalkyl radical having 1-10 carbon atoms either unsubstituted or substituted by one or more ether oxygen atoms, h=0 or 1, i=0 to 3, g=0 or 1, wherein the buffer composition has a work-function greater than 5.0 eV. In some embodiments, the H on the SO3 may be replaced by either Li, Na, or K.
摘要翻译：提供了包含半导体氧化物颗粒和（a）氟化酸聚合物和（b）掺杂有氟化酸聚合物的半导体聚合物中的至少一种的缓冲剂组合物。半导体氧化物颗粒包括金属氧化物和双金属氧化物。酸聚合物衍生自聚烯烃，聚丙烯酸酯，聚甲基丙烯酸酯，聚酰亚胺，聚酰胺，聚酰胺，聚丙烯酰胺，聚苯乙烯的单体或共聚单体。聚合物主链，侧链，侧基或其组合可以是氟化的或高度氟化的。半导体聚合物包括衍生自噻吩，吡咯，苯胺和多环杂芳族化合物的聚合物或共聚物。还提供了制备缓冲剂组合物的方法。基本上由半导体氧化物颗粒组成的缓冲组合物，其中半导体氧化物颗粒包含选自氧化铟锡（“ITO”），氧化铟锌（“IZO”），氧化铟镓和锌 - 锑双氧化物和氟化酸聚合物，其中所述氟化酸聚合物具有根据式XV的式：其中j≥0，k≥0和4≤nlE;（j + k）＆nlE; 199，Q1和Q2是F或H，Rf2是F 或具有未被取代或被一个或多个醚氧原子取代的具有1-10个碳原子的全氟烷基，h = 0或1，i = 0至3，g = 0或1，其中缓冲组合物具有更大的功函数超过5.0 eV。在一些实施方案中，SO 3上的H可以被Li，Na或K替代。

3. 发明申请

US20070278458A1 Electrically conductive polymer compositions 审中-公开
标题翻译：导电聚合物组合物
公开(公告)号：US20070278458A1
公开(公告)日：2007-12-06
申请号：US11786598
申请日：2007-04-12
申请人： Mark Martello , Che-Hsiung Hsu , Hjalti Skulason
发明人： Mark Martello , Che-Hsiung Hsu , Hjalti Skulason
IPC分类号： H01B1/02
CPC分类号： H01B1/124
摘要： The present invention relates to electrically conductive polymer compositions, and their use in organic electronic devices.
摘要翻译：本发明涉及导电聚合物组合物及其在有机电子器件中的用途。

4. 发明申请

US20060289843A1 Buffer compositions 有权
标题翻译：缓冲剂组合物
公开(公告)号：US20060289843A1
公开(公告)日：2006-12-28
申请号：US11476487
申请日：2006-06-28
申请人： Che-Hsiung Hsu , Hjalti Skulason , Mark Martello
发明人： Che-Hsiung Hsu , Hjalti Skulason , Mark Martello
IPC分类号： H01B1/08
CPC分类号： H01L51/5088 , B82Y20/00 , B82Y30/00 , C08G61/124 , C08G61/126 , C08G73/0266 , C08L65/00 , C08L79/04 , H01L51/442 , H01L2251/305 , H01L2251/306 , H01L2251/5369 , Y02E10/549 , C08L2666/04
摘要： Buffer compositions comprising semiconductive oxide particles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer are provided. Semiconductive oxide particles include metal oxides and bimetallic oxides. Acid polymers are derived from monomers or comonomers of polyolefins, polyacrylates, polymethacrylates, polyimides, polyamides, polyaramids, polyacrylamides, polystyrenes. The polymer backbone, side chains, pendant groups or combinations thereof may be fluorinated or highly fluorinated. Semiconductive polymers include polymers or copolymers derived from thiophenes, pyrroles, anilines, and polycyclic heteroaromatics. Methods for preparing buffer compositions are also provided.
摘要翻译：提供了包含半导体氧化物颗粒和（a）氟化酸聚合物和（b）掺杂有氟化酸聚合物的半导体聚合物中的至少一种的缓冲剂组合物。半导体氧化物颗粒包括金属氧化物和双金属氧化物。酸性聚合物衍生自聚烯烃，聚丙烯酸酯，聚甲基丙烯酸酯，聚酰亚胺，聚酰胺，聚芳酰胺，聚丙烯酰胺，聚苯乙烯的单体或共聚单体。聚合物主链，侧链，侧基或其组合可以是氟化的或高度氟化的。半导体聚合物包括衍生自噻吩，吡咯，苯胺和多环杂芳族化合物的聚合物或共聚物。还提供了制备缓冲剂组合物的方法。

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