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    • 1. 发明申请
    • Polymer Optoelectronic Device and Methods for Making the Same
    • 聚合物光电器件及其制造方法
    • US20070221911A1
    • 2007-09-27
    • US11547522
    • 2005-04-01
    • Antonius Van MolFrank GrobMarinus Koetse
    • Antonius Van MolFrank GrobMarinus Koetse
    • H01L51/00H01L21/44
    • H01L51/5262H01L51/5206H01L51/5209
    • The invention relates to a polymer optoelectronic device comprising at least a transparent conductive oxide layer, an active polymer layer, a back electrode layer and a substrate layer, wherein the transparent conductive oxide (TCO) layer has a controlled surface structure which is characterised by having an X-value in the range of from 10 nm to 500 nm, and a Y-value in the range of from 15 nm to 1000 nm, wherein the ratio between the X-value and the Y-value (X/Y) is at most 1, whereby the X-value is defined as the average value of the height of the peaks on the surface, the Y-value is defined as the average peak to peak distance on the surface, and both the X and Y values are measured by means of SEM (Scanning Electron Microscopy) or Atomic Force Microscopy (AFM).
    • 本发明涉及至少包括透明导电氧化物层,活性聚合物层,背电极层和基底层的聚合物光电器件,其中透明导电氧化物(TCO)层具有受控的表面结构,其特征在于具有 在10nm至500nm范围内的X值和在15nm至1000nm范围内的Y值,其中X值和Y值(X / Y)之间的比率为 最多为1,由此将X值定义为表面上的峰的高度的平均值,将Y值定义为表面上的平均峰 - 峰距离,并且X和Y值均为 通过SEM(扫描电子显微镜)或原子力显微镜(AFM)测量。