专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09136291B2 Solid-state imaging device having penetration electrode formed in semiconductor substrate 有权
标题翻译：具有形成在半导体衬底中的穿透电极的固态成像装置
公开(公告)号：US09136291B2
公开(公告)日：2015-09-15
申请号：US13490768
申请日：2012-06-07
申请人： Mariko Saito , Ikuko Inoue
发明人： Mariko Saito , Ikuko Inoue
IPC分类号： H01L27/146 , H01L31/02 , H01L21/768 , H01L23/48
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/481 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L31/02002 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/06181 , H01L2224/13022 , H01L2224/13024
摘要： A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.
摘要翻译：固态成像装置包括成像元件，外部端子，绝缘膜，穿透电极，第一绝缘中间层，第一电极和第一接触插塞。成像元件形成在半导体衬底的第一主表面上。外部端子形成在面向基板的第一主表面的第二主表面上。绝缘膜形成在形成在基板中的通孔中。穿透电极形成在通孔中的绝缘膜上并电连接到外部端子。第一绝缘中间层形成在基板的第一主表面和穿透电极上。第一电极形成在第一绝缘中间层上。第一接触塞形成在穿透电极和第一电极之间的第一绝缘中间层中，以电连接穿透电极和第一电极。

2. 发明申请

US20110209895A1 CABLE FOR HIGH-VOLTAGE ELECTRONIC DEVICE 有权
标题翻译：高压电子设备用电缆
公开(公告)号：US20110209895A1
公开(公告)日：2011-09-01
申请号：US13126945
申请日：2010-02-05
申请人： Mariko Saito , Masahiro Minowa , Junichi Nishioka , Nahoko Tanaka
发明人： Mariko Saito , Masahiro Minowa , Junichi Nishioka , Nahoko Tanaka
IPC分类号： H01B9/02
CPC分类号： H01B9/027 , H01B3/28 , H01B3/441
摘要： A cable for a high-voltage electronic device having a small diameter and an excellent voltage resistance characteristic. The cable includes an inner semiconducting layer, a high-voltage insulator, an outer semiconducting layer, a shielding layer, and a sheath on an outer periphery of a cable core portion, wherein the high-voltage insulator is formed of an insulating composition containing 0.5 to 5 parts by mass of an inorganic filler with respect to 100 parts by mass of an olefin-based polymer, and the inorganic filler has an average dispersed-particle diameter of 1 μm or less.
摘要翻译：一种用于具有小直径和优异的耐电压特性的高压电子器件的电缆。电缆包括在电缆芯部分的外周上的内部半导体层，高压绝缘体，外部半导体层，屏蔽层和护套，其中高压绝缘体由含有0.5 相对于100质量份烯烃系聚合物为5质量份无机填料，无机填料的平均分散粒径为1μm以下。

3. 发明授权

US08519499B2 Solid-state image sensor and method of manufacturing the same 有权
标题翻译：固态图像传感器及其制造方法
公开(公告)号：US08519499B2
公开(公告)日：2013-08-27
申请号：US12845194
申请日：2010-07-28
申请人： Mariko Saito , Ikuko Inoue , Takeshi Yoshida
发明人： Mariko Saito , Ikuko Inoue , Takeshi Yoshida
IPC分类号： H01L29/00
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14636 , H01L27/14645
摘要： According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.
摘要翻译：根据一个实施例，固态图像传感器包括：半导体衬底，包括光入射的第一表面和与第一表面相对的第二表面;形成在半导体衬底中的像素区域，并且包括光电转换元件，将入射光转换为电信号，形成在半导体衬底中的周边区域，并且包括控制像素区域中的元件的操作的电路;多个互连，其形成在堆叠在多个层间绝缘膜第二表面，并且连接到电路，以及形成在层叠的层间绝缘膜和互连件上的支撑衬底。形成在最上层的层间绝缘膜中的最上层的一个互连掩埋在最上层的层间绝缘膜中形成的第一沟槽中。

4. 发明申请

US20130092416A1 CABLE FOR HIGH-VOLTAGE ELECTRONIC DEVICES 有权
标题翻译：高压电子设备电缆
公开(公告)号：US20130092416A1
公开(公告)日：2013-04-18
申请号：US13805161
申请日：2011-04-18
申请人： Mariko Saito , Masahiro Minowa , Masamitsu Yamaguchi , Kazuaki Noguti
发明人： Mariko Saito , Masahiro Minowa , Masamitsu Yamaguchi , Kazuaki Noguti
IPC分类号： H01B9/02
CPC分类号： H01B9/027 , H01B3/28 , H01B3/441
摘要： A cable for high-voltage electronic devices including an inner semiconductive layer, a high-voltage insulator, an outer semiconductive layer, a shielding layer, and a sheath which are provided on an outer periphery of a cable core part in the order mentioned, wherein the high-voltage insulator is made of an insulating composition whose temperature dependence parameter DR found by the following expression is 1.0 or less: DR=log R23° C.−log R90° C. (where R23° C. is volume resistivity (Ω·cm) at 23° C. and R90° C. is volume resistivity (Ω·cm) at 90° C.). The cable for high-voltage electronic devices is small in diameter and has an excellent withstand voltage characteristic.
摘要翻译：一种用于高电压电子器件的电缆，包括按照所述顺序设置在电缆芯部分的外周上的内半导体层，高压绝缘体，外半导体层，屏蔽层和护套，其中高压绝缘体由以下表达式求出的温度依赖参数DR为1.0以下的绝缘性组合物构成：DR = log R23℃-log R90℃（其中R23℃为体积电阻率（Ω cm），R90℃为90℃下的体积电阻率（Ω·cm）。高压电子器件的电缆直径小，耐压特性优良。

5. 发明申请

US20120252156A1 SOLID-STATE IMAGING DEVICE HAVING PENETRATION ELECTRODE FORMED IN SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：具有形成在半导体基板中的渗透电极的固态成像装置
公开(公告)号：US20120252156A1
公开(公告)日：2012-10-04
申请号：US13490768
申请日：2012-06-07
申请人： Mariko Saito , Ikuko Inoue
发明人： Mariko Saito , Ikuko Inoue
IPC分类号： H01L31/18
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/481 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L31/02002 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/06181 , H01L2224/13022 , H01L2224/13024
摘要： A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.
摘要翻译：固态成像装置包括成像元件，外部端子，绝缘膜，穿透电极，第一绝缘中间层，第一电极和第一接触插塞。成像元件形成在半导体衬底的第一主表面上。外部端子形成在面向基板的第一主表面的第二主表面上。绝缘膜形成在形成在基板中的通孔中。穿透电极形成在通孔中的绝缘膜上并电连接到外部端子。第一绝缘中间层形成在基板的第一主表面和穿透电极上。第一电极形成在第一绝缘中间层上。第一接触塞形成在穿透电极和第一电极之间的第一绝缘中间层中，以电连接穿透电极和第一电极。

6. 发明授权

US07965331B2 Solid state imaging element, image pickup device and method of driving solid state imaging element 失效
标题翻译：固态成像元件，图像拾取装置和驱动固态成像元件的方法
公开(公告)号：US07965331B2
公开(公告)日：2011-06-21
申请号：US12176871
申请日：2008-07-21
申请人： Mariko Saito , Hideki Wako , Katsumi Ikeda
发明人： Mariko Saito , Hideki Wako , Katsumi Ikeda
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3765 , H04N5/3698 , H04N5/3728
摘要： A solid state imaging element comprises: photoelectric conversion elements; a plurality of vertical electric charge transfer passages that transfer, in a vertical direction, electric charges generated by the photoelectric conversion elements; and a horizontal electric charge transfer passage that transfers, in a horizontal direction perpendicular to the vertical direction, the electric charges transferred in the vertical electric charge transfer passage, wherein the horizontal electric charge transfer passage comprises a plurality of electric charge transferring stages each of which operates as an electric charge accumulating region or a barrier region according to a level of an applied voltage, and each of said plurality of electric charge transferring stages is connected to plural ones of the vertical electric charge transfer passages.
摘要翻译：固态成像元件包括：光电转换元件; 多个垂直电荷转移通道，其在垂直方向上转移由所述光电转换元件产生的电荷; 以及水平电荷传递通道，其在与垂直方向垂直的水平方向上传送在垂直电荷转移通道中传送的电荷，其中水平电荷转移通道包括多个电荷转移阶段，每个电荷转移步骤根据施加电压的电平作为电荷积聚区域或势垒区域进行工作，并且所述多个电荷转移级中的每一个连接到多个垂直电荷转移通道。

7. 发明申请

US20070262365A1 Solid-state imaging device and method of driving the same 审中-公开
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US20070262365A1
公开(公告)日：2007-11-15
申请号：US11797044
申请日：2007-04-30
申请人： Mariko Saito , Katsumi Ikeda
发明人： Mariko Saito , Katsumi Ikeda
IPC分类号： H01L31/113 , H01L31/062
CPC分类号： H01L27/14837 , H01L27/14887 , H04N5/335 , H04N5/3592 , H04N5/361 , H04N5/372
摘要： A charge transfer section includes first transfer electrodes for effecting the reading and transfer of electric charges and the transfer of signal charges and second transfer electrodes each provided between adjacent ones of the first transfer electrodes to effect the transfer of the signal charges along the charge transfer section. A timing signal supplying section supplies a driving pulse signal to the first and second transfer electrodes when the signal charges are transferred along the charge transfer section, and supplies a pulse signal for constituting a barrier potential of a level at which the first transfer electrodes do not produce a dark current for photoelectric conversion elements when the transfer of the signal charges along the charge transfer section is stopped.
摘要翻译：电荷转移部分包括用于实现电荷的读取和转移以及每个设置在相邻的第一转移电极之间的信号电荷和第二转移电极的转移的第一转移电极，以实现沿电荷转移部分的信号电荷的转移。当信号电荷沿着电荷转移部分传送时，定时信号提供部分将驱动脉冲信号提供给第一和第二传输电极，并且提供用于构成第一传输电极不为的电平的势垒电位的脉冲信号当沿着电荷转移部分的信号电荷转移停止时，产生用于光电转换元件的暗电流。

8. 发明申请

US20110038891A1 NOVEL LACTIC ACID BACTERIUM HAVING ANTI-ALLERGIC ACTIVITY, ANTI-ALLERGIC AGENT, FOOD AND PHARMACEUTICAL COMPOSITION EACH COMPRISING THE LACTIC ACID BACTERIUM, AND PROCESS FOR PRODUCTION OF THE ANTI-ALLERGIC AGENT 有权
标题翻译：具有抗过敏活性的新型乳酸菌，含有酸性细菌的抗过敏剂，食品和药物组合物，以及生产抗过敏剂的方法
公开(公告)号：US20110038891A1
公开(公告)日：2011-02-17
申请号：US12989052
申请日：2009-04-24
申请人： Takashi Hara , Toshio Joh , Takehisa Kumagai , Mariko Saito , Kimiko Uchiyama
发明人： Takashi Hara , Toshio Joh , Takehisa Kumagai , Mariko Saito , Kimiko Uchiyama
IPC分类号： A61K39/02 , C12N1/20 , A61P37/08
CPC分类号： C12R1/225 , A23L7/104 , A23L33/135 , A61K35/74
摘要： An object aims to develop a lactic acid bacterium having an anti-allergic activity, which can be grown by using rice, particularly polished white rice, and can be collected, cooked and ingested together with rice in such a state that the lactic acid bacterium is attached to the surface of the rice. Another object aims to develop a food composition and a pharmaceutical composition, each of which comprises rice containing the lactic acid bacterium as a material. Thus, disclosed are: a lactic acid bacterium Lactobacillus paracasei K71 strain which has been internationally deposited in National Institute of Advanced Industrial Science and Technology, International Patent Organism Depositary under Accession No. FERM BP-11098; an anti-allergic agent comprising the lactic acid bacterium; a food composition comprising the anti-allergic agent; a food composition comprising rice which has been fermented with the lactic acid bacterium, a crushed product of the rice, or a cooked product of the rice or the crushed product of the rice; and a pharmaceutical composition comprising the anti-allergic agent.
摘要翻译：本发明的目的是开发具有抗过敏活性的乳酸菌，其可以通过使用水稻，特别是抛光的白米来生长，并且可以在乳酸菌为附着在米的表面。另一个目的是开发食品组合物和药物组合物，其中每种包含含有乳酸菌作为材料的水稻。因此，公开了：已经国际保藏在国家先进工业科学技术研究所的国际专利生物保藏中心，保藏号为FERM BP-11098的乳酸菌副干酪乳杆菌K71株; 包含所述乳酸菌的抗过敏剂; 包含抗过敏剂的食品组合物; 包含已经用乳酸菌发酵的米，米粉碎产品或米饭的熟制品或米粉碎产品的食品组合物; 和包含抗过敏剂的药物组合物。

9. 发明申请

US20100207224A1 SOLID-STATE IMAGING DEVICE HAVING PENETRATION ELECTRODE FORMED IN SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：具有形成在半导体基板中的渗透电极的固态成像装置
公开(公告)号：US20100207224A1
公开(公告)日：2010-08-19
申请号：US12629322
申请日：2009-12-02
申请人： Mariko SAITO , Ikuko Inoue
发明人： Mariko SAITO , Ikuko Inoue
IPC分类号： H01L31/0232
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/481 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L31/02002 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/06181 , H01L2224/13022 , H01L2224/13024
摘要： A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.
摘要翻译：固态成像装置包括成像元件，外部端子，绝缘膜，穿透电极，第一绝缘中间层，第一电极和第一接触插塞。成像元件形成在半导体衬底的第一主表面上。外部端子形成在面向基板的第一主表面的第二主表面上。绝缘膜形成在形成在基板中的通孔中。穿透电极形成在通孔中的绝缘膜上并电连接到外部端子。第一绝缘中间层形成在基板的第一主表面和穿透电极上。第一电极形成在第一绝缘中间层上。第一接触塞形成在穿透电极和第一电极之间的第一绝缘中间层中，以电连接穿透电极和第一电极。

10. 发明授权

US08361481B2 Lactic acid bacterium having anti-allergic activity and pharmaceutical composition 有权
标题翻译：具有抗过敏活性和药物组成的乳酸菌
公开(公告)号：US08361481B2
公开(公告)日：2013-01-29
申请号：US12989052
申请日：2009-04-24
申请人： Takashi Hara , Toshio Joh , Takehisa Kumagai , Mariko Saito , Kimiko Uchiyama
发明人： Takashi Hara , Toshio Joh , Takehisa Kumagai , Mariko Saito , Kimiko Uchiyama
IPC分类号： A61K39/02 , C12N1/20
CPC分类号： C12R1/225 , A23L7/104 , A23L33/135 , A61K35/74
摘要： An object aims to develop a lactic acid bacterium having an anti-allergic activity, which can be grown by using rice, particularly polished white rice, and can be collected, cooked and ingested together with rice in such a state that the lactic acid bacterium is attached to the surface of the rice. Another object aims to develop a food composition and a pharmaceutical composition, each of which comprises rice containing the lactic acid bacterium as a material. Thus, disclosed are: a lactic acid bacterium Lactobacillus paracasei K71 strain which has been internationally deposited in National Institute of Advanced Industrial Science and Technology, International Patent Organism Depositary under Accession No. FERM BP-11098; an anti-allergic agent comprising the lactic acid bacterium; a food composition comprising the anti-allergic agent; a food composition comprising rice which has been fermented with the lactic acid bacterium, a crushed product of the rice, or a cooked product of the rice or the crushed product of the rice; and a pharmaceutical composition comprising the anti-allergic agent.
摘要翻译：本发明的目的是开发具有抗过敏活性的乳酸菌，其可以通过使用水稻，特别是抛光的白米来生长，并且可以在乳酸菌为附着在米的表面。另一个目的是开发食品组合物和药物组合物，其中每种包含含有乳酸菌作为材料的水稻。因此，公开了：已经国际保藏在国家先进工业科学技术研究所的国际专利生物保藏中心，保藏号为FERM BP-11098的乳酸菌副干酪乳杆菌K71株; 包含所述乳酸菌的抗过敏剂; 包含抗过敏剂的食品组合物; 包含已经用乳酸菌发酵的米，米粉碎产品或米饭的熟制品或米粉碎产品的食品组合物; 和包含抗过敏剂的药物组合物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式