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1. 发明授权

US08331411B2 Edge-emitting semiconductor laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US08331411B2
公开(公告)日：2012-12-11
申请号：US13255632
申请日：2010-04-22
申请人： Marc Schillgalies , Stephan Lutgen , Uwe Strauss
发明人： Marc Schillgalies , Stephan Lutgen , Uwe Strauss
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01L2224/48091 , H01L2224/48247 , H01S5/02212 , H01S5/028 , H01S5/0281 , H01S5/0683 , H01S5/2031 , H01S5/32341 , H01S5/34 , H01S2301/185 , H01L2924/00014
摘要： The invention relates to an edge-emitting semiconductor laser comprising a semiconductor body (10), which comprises a waveguide region (4), wherein the waveguide region (4) comprises a first waveguide layer (2A), a second waveguide layer (2B) and an active layer (3) arranged between the first waveguide layer (2A) and the second waveguide layer (2B) and serving for generating laser radiation (5), and the waveguide region (4) is arranged between a first cladding layer (1A) and a second cladding layer (1B) disposed downstream of the waveguide region (4) in the growth direction of the semiconductor body (10). The waveguide region (4) has a thickness d of 400 nm or less, and an emission angle of the laser radiation (5) emerging from the semiconductor body (10) in a direction parallel to the layer plane of the active layer (3) and the emission angle of the laser radiation (5) emerging from the semiconductor body (10) in a direction perpendicular to the layer plane of the active layer (3) differ from one another by less than a factor of 3.
摘要翻译：本发明涉及一种包括半导体本体（10）的边缘发射半导体激光器，其包括波导区域（4），其中波导区域（4）包括第一波导层（2A），第二波导层（2B）以及布置在所述第一波导层（2A）和所述第二波导层（2B）之间并用于产生激光辐射（5）的有源层（3），并且所述波导区域（4）布置在第一包层）和在半导体本体（10）的生长方向上设置在波导区域（4）的下游的第二包覆层（1B）。波导区域（4）的厚度d为400nm以下，从与半导体本体（10）平行的方向与激活层（3）的层面平行的方向的激光辐射（5）的发射角度，并且在垂直于有源层（3）的层平面的方向上从半导体本体（10）出射的激光辐射（5）的发射角彼此相差小于3倍。

2. 发明授权

US08471240B2 Semiconductor layer structure with superlattice 有权
标题翻译：半导体层结构超晶格
公开(公告)号：US08471240B2
公开(公告)日：2013-06-25
申请号：US13009422
申请日：2011-01-19
申请人： Christoph Eichler , Alfred Lell , Andreas Miler , Marc Schillgalies
发明人： Christoph Eichler , Alfred Lell , Andreas Miler , Marc Schillgalies
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01L2924/00
摘要： An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.
摘要翻译：一种包括半导体层结构的光电子部件，所述半导体层结构包括由第一和至少一种第二类型的III-V族化合物半导体层叠层构成的超晶格。超晶格中不同类型的相邻层相对于至少一个元素的组成不同，至少两个相同类型的层具有至少一种元素的不同含量，至少一种元素的含量分级在超晶格的层，并且超晶格的层含有预定浓度的掺杂剂，超晶格包含掺杂有不同掺杂剂的层。以这种方式，超晶格的电，光学和外延特性可以以给定的要求，特别是外延约束的最佳可能方式进行调整。

3. 发明授权

US08022392B2 Semiconductor layer structure with superlattice 有权
标题翻译：半导体层结构超晶格
公开(公告)号：US08022392B2
公开(公告)日：2011-09-20
申请号：US11780516
申请日：2007-07-20
申请人： Christoph Eichler , Alfred Lell , Andreas Miler , Marc Schillgalies
发明人： Christoph Eichler , Alfred Lell , Andreas Miler , Marc Schillgalies
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01L33/04 , H01L2924/0002 , H01S5/2009 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01L2924/00
摘要： The semiconductor layer structure includes an active layer and a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element. The layers have predefined layer thicknesses, such that the layer thicknesses of layers of the first type and of the layers of the second type increase from layer to layer with increasing distance from an active layer. An increasing layer thickness within the layers of the first and the second type is suitable for adapting the electrical, optical and epitaxial properties of the superlattice to given requirements in the best possible manner.
摘要翻译：半导体层结构包括由第一和至少第二类型的III-V族化合物半导体层叠层构成的有源层和超晶格。超晶格中不同类型的相邻层相对于至少一个元素的组成不同。这些层具有预定的层厚度，使得第一类型的层和第二类型的层的层厚度随着与有源层的距离增加而逐层增加。在第一和第二类型的层内增加的层厚度适合于以最佳可能方式使超晶格的电，光学和外延特性适应给定的要求。

4. 发明申请

US20080054252A1 SEMICONDUCTOR LAYER STRUCTURE WITH OVER LATTICE 有权
标题翻译：半导体层结构与超导体
公开(公告)号：US20080054252A1
公开(公告)日：2008-03-06
申请号：US11780516
申请日：2007-07-20
申请人： Christoph Eichler , Alfred Lell , Andreas Miler , Marc Schillgalies
发明人： Christoph Eichler , Alfred Lell , Andreas Miler , Marc Schillgalies
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01L33/04 , H01L2924/0002 , H01S5/2009 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01L2924/00
摘要： The semiconductor layer structure includes an active layer (6) and a superlattice (9) composed of stacked layers (9a, 9b) of III-V compound semiconductors of a first (a) and at least one second type (b). Adjacent layers of different types in the superlattice (9) differ in composition with respect to at least one element. The layers (9a, 9b) have predefined layer thicknesses, such that the layer thicknesses of layers (9a) of the first type (a) and of the layers (9b) of the second type (b) increase from layer to layer with increasing distance from an active layer (6). An increasing layer thickness within the layers of the first and the second type (a, b) is suitable for adapting the electrical, optical and epitaxial properties of the superlattice (9) to given requirements in the best possible manner.
摘要翻译：半导体层结构包括由第一（a）和至少一个第二类型（b）的III-V族化合物半导体的堆叠层（9a，9b）组成的有源层（6）和超晶格（9）。超晶格（9）中不同类型的相邻层相对于至少一个元素的组成不同。层（9a，9b）具有预定的层厚度，使得第一类型（a）的层（9a）和第二类型（b）的层（9b）的层的厚度从层以增加距离有源层（6）的距离。在第一和第二类型（a，b）的层内增加的层厚度适合于以最佳可能方式使超晶格（9）的电，光学和外延特性适应给定的要求。

5. 发明授权

US08879596B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US08879596B2
公开(公告)日：2014-11-04
申请号：US13515024
申请日：2010-11-12
申请人： Dimitri Dini , Marc Schillgalies
发明人： Dimitri Dini , Marc Schillgalies
IPC分类号： H01S5/02 , H01L21/78 , H01S5/323 , H01S5/022 , H01S5/042 , H01S5/22
CPC分类号： H01S5/32341 , H01S5/0201 , H01S5/02272 , H01S5/0425 , H01S5/2201 , H01S2304/12
摘要： A semiconductor laser includes a semiconductor body having an active region that generates radiation and a ridge-shaped region, wherein the ridge-shaped region has a longitudinal axis running along an emission direction, a central axis of the semiconductor body runs in the emission direction and the longitudinal axis is arranged in a manner offset with respect to the central axis in a transverse direction.
摘要翻译：半导体激光器包括具有产生辐射的有源区域和脊形区域的半导体本体，其中脊形区域具有沿发射方向延伸的纵向轴线，半导体主体的中心轴线沿着发射方向延伸，并且纵向轴线以横向相对于中心轴线偏移的方式布置。

6. 发明授权

US08625648B2 Edge-emitting semiconductor laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US08625648B2
公开(公告)日：2014-01-07
申请号：US13393167
申请日：2010-08-19
申请人： Marc Schillgalies , Teresa Lermer , Christoph Eichler
发明人： Marc Schillgalies , Teresa Lermer , Christoph Eichler
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0655 , H01S5/2004 , H01S5/2009 , H01S5/2027 , H01S5/22 , H01S2301/18
摘要： An edge emitting semiconductor laser (1) is specified, comprising an n-side waveguide region (21) and a p-side waveguide region (22); an active zone (20) for generating electromagnetic radiation; at least one reflection layer (24) in the n-side waveguide region (21), wherein the active zone (20) is arranged between the two waveguide regions (21, 22), the thickness of the n-side waveguide region (21) is greater than that of the p-side waveguide region (22), the refractive index of the reflection layer (24) is less than the refractive index of the n-side waveguide region (21) adjoining the reflection layer (24).
摘要翻译：指定边缘发射半导体激光器（1），其包括n侧波导区域（21）和p侧波导区域（22）; 用于产生电磁辐射的活动区域（20）; 所述n侧波导区域（21）中的至少一个反射层（24），其中所述有源区域（20）布置在所述两个波导区域（21,22）之间，所述n侧波导区域（21）的厚度）大于p侧波导区域（22）的折射率，反射层（24）的折射率小于与反射层（24）相邻的n侧波导区域（21）的折射率。

7. 发明申请

US20120287956A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20120287956A1
公开(公告)日：2012-11-15
申请号：US13515024
申请日：2010-11-12
申请人： Dimitri Dini , Marc Schillgalies
发明人： Dimitri Dini , Marc Schillgalies
IPC分类号： H01S5/02 , H01L21/78
CPC分类号： H01S5/32341 , H01S5/0201 , H01S5/02272 , H01S5/0425 , H01S5/2201 , H01S2304/12
摘要： A semiconductor laser includes a semiconductor body having an active region that generates radiation and a ridge-shaped region, wherein the ridge-shaped region has a longitudinal axis running along an emission direction, a central axis of the semiconductor body runs in the emission direction and the longitudinal axis is arranged in a manner offset with respect to the central axis in a transverse direction.
摘要翻译：半导体激光器包括具有产生辐射的有源区域和脊形区域的半导体本体，其中脊形区域具有沿发射方向延伸的纵向轴线，半导体主体的中心轴线沿着发射方向延伸，并且纵向轴线以横向相对于中心轴线偏移的方式布置。

8. 发明申请

US20120201262A1 Edge-Emitting Semiconductor Laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US20120201262A1
公开(公告)日：2012-08-09
申请号：US13393167
申请日：2010-08-19
申请人： Marc Schillgalies , Teresa Lermer , Christoph Eichler
发明人： Marc Schillgalies , Teresa Lermer , Christoph Eichler
IPC分类号： H01S5/026
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0655 , H01S5/2004 , H01S5/2009 , H01S5/2027 , H01S5/22 , H01S2301/18
摘要： An edge emitting semiconductor laser (1) is specified, comprising an n-side waveguide region (21) and a p-side waveguide region (22); an active zone (20) for generating electromagnetic radiation; at least one reflection layer (24) in the n-side waveguide region (21), wherein the active zone (20) is arranged between the two waveguide regions (21, 22), the thickness of the n-side waveguide region (21) is greater than that of the p-side waveguide region (22), the refractive index of the reflection layer (24) is less than the refractive index of the n-side waveguide region (21) adjoining the reflection layer (24).
摘要翻译：指定边缘发射半导体激光器（1），其包括n侧波导区域（21）和p侧波导区域（22）; 用于产生电磁辐射的活动区域（20）; 所述n侧波导区域（21）中的至少一个反射层（24），其中所述有源区域（20）布置在所述两个波导区域（21,22）之间，所述n侧波导区域（21）的厚度）大于p侧波导区域（22）的折射率，反射层（24）的折射率小于与反射层（24）相邻的n侧波导区域（21）的折射率。

9. 发明申请

US20110168977A1 SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE 有权
标题翻译：半导体层结构与超导
公开(公告)号：US20110168977A1
公开(公告)日：2011-07-14
申请号：US13009422
申请日：2011-01-19
申请人： Christoph Eichler , Alfred Lell , Andreas Miler , Marc Schillgalies
发明人： Christoph Eichler , Alfred Lell , Andreas Miler , Marc Schillgalies
IPC分类号： H01L33/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01L2924/00
摘要： An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.
摘要翻译：一种包括半导体层结构的光电子部件，所述半导体层结构包括由第一和至少一种第二类型的III-V族化合物半导体层叠层构成的超晶格。超晶格中不同类型的相邻层相对于至少一个元素的组成不同，至少两个相同类型的层具有至少一种元素的不同含量，至少一种元素的含量分级在超晶格的层，并且超晶格的层含有预定浓度的掺杂剂，超晶格包含掺杂有不同掺杂剂的层。以这种方式，超晶格的电，光学和外延特性可以以给定的要求，特别是外延约束的最佳可能方式进行调整。

10. 发明授权

US09397262B2 Optoelectronic semiconductor chip and method for the production thereof 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US09397262B2
公开(公告)日：2016-07-19
申请号：US13056724
申请日：2009-07-21
申请人： Stephan Lutgen , Christoph Eichler , Marc Schillgalies , Desiree Queren
发明人： Stephan Lutgen , Christoph Eichler , Marc Schillgalies , Desiree Queren
IPC分类号： H01L33/00 , H01L33/24 , H01L21/02 , H01S5/223 , H01L33/48 , H01L31/0236 , H01L33/62 , H01S5/042 , H01S5/20 , H01S5/24 , H01S5/32
CPC分类号： H01L33/24 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02587 , H01L31/0236 , H01L33/007 , H01L33/486 , H01L33/62 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/2031 , H01S5/2231 , H01S5/24 , H01S5/3201 , H01S5/3211 , H01S5/3213 , H01S5/3215 , H01S2301/18 , H01S2304/12 , H01L2924/00
摘要： An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound semiconductor material, and an active zone (5), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (2), and a top layer (7), which is arranged on the active zone (5), the growth layer (2) comprising structure elements (4) at a growth surface (3) facing the active zone (5).
摘要翻译：本文描述了一种光电半导体芯片（1），其包括含有至少一个第一氮化物化合物半导体材料的非平面生长层（2）和包含至少一个第二氮化物化合物半导体并且布置在生长层（2）上，并且在生长表面（3）上布置有包括结构元件（4）的生长层（2）的布置在活性区（5）上的顶层（7）面向活动区域（5）。

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