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1. 发明授权

US06391761B1 Method to form dual damascene structures using a linear passivation 有权
标题翻译：使用线性钝化形成双镶嵌结构的方法
公开(公告)号：US06391761B1
公开(公告)日：2002-05-21
申请号：US09398293
申请日：1999-09-20
申请人： Lawrence Lui
发明人： Lawrence Lui
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L2221/1063
摘要： A method to form dual damascene structures is described. A substrate layer is provided. An anti-diffusion layer is deposited. A first dielectric layer is deposited. An etch stopping layer is deposited. A second dielectric layer is deposited. The second dielectric layer, the etch stopping layer, and the first dielectric layer are patterned to form the vias. A liner layer is deposited overlying the second dielectric layer and internal surfaces of the lower trenches. The liner layer and the second dielectric layer are patterned to form the upper trenches. The liner layer and the anti-diffusion layer are etched through to complete the formation of the dual damascene structure, and the integrated circuit device is completed.
摘要翻译：描述了形成双镶嵌结构的方法。提供基底层。沉积抗扩散层。沉积第一介电层。沉积蚀刻停止层。沉积第二介电层。将第二电介质层，蚀刻停止层和第一电介质层图案化以形成通孔。沉积衬垫层，覆盖第二电介质层和下沟槽的内表面。将衬垫层和第二电介质层图案化以形成上沟槽。衬里层和抗扩散层被蚀刻通过以完成双镶嵌结构的形成，并且集成电路器件完成。

2. 发明授权

US06995085B2 Underlayer protection for the dual damascene etching 有权
标题翻译：双镶嵌蚀刻的底层保护
公开(公告)号：US06995085B2
公开(公告)日：2006-02-07
申请号：US10346384
申请日：2003-01-17
申请人： Lawrence Lui , Chia-Shia Tsai , Chao-Cheng Chen , Jen-Cheng Liu
发明人： Lawrence Lui , Chia-Shia Tsai , Chao-Cheng Chen , Jen-Cheng Liu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808
摘要： A method of protecting an underlying diffusion barrier layer in a dual damascene trench and via etch process with a coating of negative photoresist. The dual damascene process starts with via hole etching in an intermetal dielectric (IMD) layer. Next, the thin film barrier layer is deposited and patterned to fill the bottom of the vias. The key process step is a coating of negative photoresist which is exposed and developed to partially fill the via openings. This thick layer of negative photoresist in the vias protects the thin diffusion barrier layer from subsequent dual damascene etch processing.
摘要翻译：一种在双镶嵌沟槽中保护底层扩散阻挡层的方法，以及通过蚀刻工艺与负性光致抗蚀剂的涂层。双镶嵌工艺从金属间电介质（IMD）层中的通孔蚀刻开始。接下来，沉积和图案化薄膜阻挡层以填充通孔的底部。关键的工艺步骤是负性光致抗蚀剂的涂层，其被暴露和显影以部分填充通孔。通孔中的这种厚的负光致抗蚀剂层保护了薄的扩散阻挡层免于后续的双镶嵌蚀刻加工。

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