会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Method for fabricating a flash memory
    • 制造闪存的方法
    • US6153472A
    • 2000-11-28
    • US241544
    • 1999-02-01
    • Yen-Lin DingGary Hong
    • Yen-Lin DingGary Hong
    • H01L21/8247
    • H01L27/11521
    • A method for fabricating a flash memory is provided. The method contains sequentially forming a tunneling oxide layer, a polysilicon layer, and a silicon nitride layer on a semiconductor substrate. Patterning the silicon nitride layer, polysilicon layer, the tunneling oxide layer, and the substrate forms a trench in the substrate. A shallow trench isolation (STI) structure is formed to fill the trench up the silicon nitride layer. The silicon nitride layer is removed to expose the polysilicon layer and a portion of each sidewall of the STI structure. A polysilicon spacer is formed on each exposed sidewall of the STI structure. An upper portion of the STI structure is removed so as to expose a portion of each sidewall of the polysilicon layer. The polysilicon layer serves as a floating gate. A conformal dielectric layer and a top polysilicon layer are formed over the substrate. The top polysilicon layer, the dielectric layer, and the polysilicon layer are patterned to form a strip control gate, which covers the floating gate, that is a remaining portion of the polysilicon layer on the tunneling oxide layer.
    • 提供一种制造闪存的方法。 该方法包括在半导体衬底上依次形成隧道氧化物层,多晶硅层和氮化硅层。 对氮化硅层,多晶硅层,隧道氧化物层和衬底进行图案化,在衬底中形成沟槽。 形成浅沟槽隔离(STI)结构以填充氮化硅层的沟槽。 去除氮化硅层以暴露多晶硅层和STI结构的每个侧壁的一部分。 在STI结构的每个暴露的侧壁上形成多晶硅间隔物。 去除STI结构的上部,以暴露多晶硅层的每个侧壁的一部分。 多晶硅层用作浮栅。 在衬底上方形成保形电介质层和顶部多晶硅层。 图案化顶部多晶硅层,电介质层和多晶硅层以形成带状控制栅极,该栅极控制栅极覆盖浮动栅极,该浮栅是隧道氧化物层上的多晶硅层的剩余部分。
    • 7. 发明授权
    • Method of manufacturing flash memory
    • 闪存制造方法
    • US6048768A
    • 2000-04-11
    • US267760
    • 1999-03-11
    • Yen-Lin DingGary Hong
    • Yen-Lin DingGary Hong
    • H01L21/8247H01L27/115H01L21/336
    • H01L27/115H01L27/11521
    • A method for manufacturing a flash memory. A substrate having a patterned pad oxide layer formed thereon and a patterned mask layer on the pad oxide layer is provided. A doped region is formed in the substrate exposed by the patterned mask layer and the pad oxide layer. A spacer is formed on the sidewall of the patterned mask layer and the pad oxide layer to cover a portion of the doped region. A trench is formed in the substrate exposed by the mask layer and the spacer. An insulating layer is formed to fill the trench, wherein the insulating layer leveled with a top surface of the patterned mask layer. The patterned mask layer and the spacer are removed to respectively expose the patterned oxide layer and the portion of the doped region. A self-aligned tunnel oxide layer is formed on the portion of the doped region. A patterned first conductive layer is formed over the substrate to expose portions of the patterned pad oxide layer above the substrate excluding the doped region. A self-aligned doped region is formed in the substrate under the patterned pad oxide layer exposed by the patterned first conductive layer. A dielectric layer is formed on the patterned first conductive layer and the self-aligned doped region. A patterned second conductive layer is formed over the substrate.
    • 一种用于制造闪速存储器的方法。 提供其上形成有图案化的衬垫氧化物层的衬底和衬垫氧化物层上的图案化掩模层。 在由图案化掩模层和衬垫氧化物层暴露的衬底中形成掺杂区域。 在图案化掩模层的侧壁和衬垫氧化物层上形成间隔物以覆盖掺杂区域的一部分。 在由掩模层和间隔物暴露的衬底中形成沟槽。 形成绝缘层以填充沟槽,其中绝缘层与图案化掩模层的顶表面平齐。 去除图案化的掩模层和间隔物以分别暴露图案化氧化物层和掺杂区域的部分。 在掺杂区域的部分上形成自对准的隧道氧化物层。 图案化的第一导电层形成在衬底上,以暴露除了掺杂区域之外的衬底上的图案化衬垫氧化物层的部分。 在由图案化的第一导电层暴露的图案化的衬垫氧化物层下面的衬底中形成自对准掺杂区域。 在图案化的第一导电层和自对准掺杂区上形成介电层。 在衬底上形成图案化的第二导电层。
    • 8. 发明申请
    • ELECTRONIC DEVICE WITH LIGHT BAR
    • 带灯条的电子设备
    • US20130033896A1
    • 2013-02-07
    • US13443260
    • 2012-04-10
    • YUN-LUNG CHENLIANG-CHIN WANGLIN DINGCHUAN LIN
    • YUN-LUNG CHENLIANG-CHIN WANGLIN DINGCHUAN LIN
    • F21V8/00
    • G06F1/181G02B6/001
    • An electronic device includes a frame, a front panel secured to the frame, two light sources secured to the front panel, and a light bar. The frame includes a first sidewall, a second sidewall, and a top wall connected to the first sidewall and the second sidewall. A first supporting portion is located between the first sidewall and the top wall. A second supporting portion is located between the second sidewall and the top wall. The top wall, the first supporting portion, and the second supporting portion cooperatively define an installation hole. A light bar includes a body including a bridge and a light guiding portion located on the bridge. The bridge is located on the supporting portion and the second supporting portion. The light guiding portion is engaged in the installation hole. Two light sources are aligned with two opposite sides of the light guiding portion.
    • 电子设备包括框架,固定到框架的前面板,固定到前面板的两个光源和灯条。 框架包括第一侧壁,第二侧壁和连接到第一侧壁和第二侧壁的顶壁。 第一支撑部分位于第一侧壁和顶壁之间。 第二支撑部分位于第二侧壁和顶壁之间。 顶壁,第一支撑部分和第二支撑部分协作地限定安装孔。 灯杆包括主体,其包括桥和位于桥上的导光部。 桥梁位于支撑部分和第二支撑部分上。 导光部分接合在安装孔中。 两个光源与导光部分的两个相对的两侧对齐。
    • 10. 发明授权
    • Computer enclosure
    • 电脑外壳
    • US07253359B2
    • 2007-08-07
    • US11188358
    • 2005-07-25
    • Yun-Lung ChenLin Ding
    • Yun-Lung ChenLin Ding
    • H05K5/00
    • G06F1/181
    • A computer enclosure includes a chassis (30), a side panel (10), a clip piece (25) and a button (21). The chassis includes an elastic tab (353) with a free end titled. The side panel is mounted on the chassis. The clip piece is attached to the side panel. The clip piece defines an opening (253) therein. The clip piece engages with the free end of the elastic tab for securing the side panel on the chassis. The button is disposed on the side panel. The button has a post (213) extending through the opening of the side panel for disengaging the elastic tab from the clip piece, thereby moving the side panel away from the chassis.
    • 计算机外壳包括底盘(30),侧面板(10),夹子(25)和按钮(21)。 底盘包括具有自由端标题的弹性片(353)。 侧面板安装在机箱上。 夹片连接到侧面板上。 夹片在其中限定开口(253)。 夹片与弹性片的自由端接合,用于将侧板固定在底盘上。 按钮设置在侧面板上。 按钮具有延伸穿过侧板的开口的柱(213),用于使弹性突片与夹片分离,从而将侧板移离底盘。