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1. 发明申请

US20060128288A1 Conditioner for chemical mechanical planarization pad 审中-公开
标题翻译：化学机械平面化垫的调节剂
公开(公告)号：US20060128288A1
公开(公告)日：2006-06-15
申请号：US11296733
申请日：2005-12-07
申请人： Jung An , Joo Lee , Kyoung Kwack
发明人： Jung An , Joo Lee , Kyoung Kwack
IPC分类号： B24B21/18
CPC分类号： B24B53/017 , B24B53/12
摘要： The present invention provides a conditioner for CMP pad required for global planarization of wafer to achieve high integration of a semiconductor element. The conditioner for CMP pad includes a metal substrate having abrasive particles fixed thereto, a plurality of abrasive particles fixed to the metal substrate, and a layer of metal binder fixing the abrasive particles to the metal substrate. The abrasive particles include at least one pattern. The pattern includes at least one row of abrasive particles and the abrasive particles include bigger abrasive particles and smaller abrasive particles. In addition, a diameter difference between smaller and bigger abrasive particles is 10 to 40%. The present invention ensures uniform dressing of conditioner, superior dressing efficiency and superior performance reproducibility.
摘要翻译：本发明提供了一种用于对晶片进行全局平坦化所需的CMP焊盘的调节器，以实现半导体元件的高集成度。用于CMP垫的调节剂包括固定有磨料颗粒的金属基底，固定到金属基底上的多个磨料颗粒和将磨料颗粒固定到金属基底上的金属粘合剂层。研磨颗粒包括至少一种图案。该图案包括至少一排研磨颗粒，并且磨料颗粒包括较大的磨料颗粒和较小的磨料颗粒。此外，较小和较大磨料颗粒之间的直径差为10至40％。本发明保证了调理剂的均匀整理，优良的切割效率和优异的再现性。

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