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1. 发明申请

US20110147851A1 Method For Depositing Gate Metal For CMOS Devices 审中-公开
标题翻译： CMOS器件栅极金属沉积方法
公开(公告)号：US20110147851A1
公开(公告)日：2011-06-23
申请号：US12641497
申请日：2009-12-18
申请人： Christopher D. Thomas , Joseph M. Steigerwald , Timothy E. Glassman , Kyoung H. Kim , Dan S. Lavric , Michael Ollinger , M. N. Perez-Paz
发明人： Christopher D. Thomas , Joseph M. Steigerwald , Timothy E. Glassman , Kyoung H. Kim , Dan S. Lavric , Michael Ollinger , M. N. Perez-Paz
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823821 , H01L21/28088 , H01L21/823828 , H01L21/823842 , H01L29/4966
摘要： A semiconductor device comprises a substrate, a channel region, and a gate formed in association with the channel region. In one exemplary embodiment, the gate comprises a first material that is formed void free on an interior surface of a gate trench of the gate. A width of the gate trench comprises between about 8 nm and about 65 nm. The gate comprises a transition metal alloyed with carbon, aluminum or nitrogen, or combinations thereof, to form a carbide, a nitride, or a carbo-nitride, or combinations thereof, of the transition metal. In another exemplary embodiment, the gate further comprises a second material formed void free on an interior surface of the first material and comprises a transition metal alloyed with carbon, aluminum or nitrogen, or combinations thereof, to form a carbide, a nitride, or a carbo-nitride, or combinations thereof, of the transition metal.
摘要翻译：半导体器件包括与沟道区域相关联地形成的衬底，沟道区域和栅极。在一个示例性实施例中，栅极包括在栅极的栅极沟槽的内表面上无空隙形成的第一材料。栅极沟槽的宽度包括约8nm至约65nm。栅极包括与碳，铝或氮合金或其组合的过渡金属，以形成过渡金属的碳化物，氮化物或碳氮化物或其组合。在另一个示例性实施例中，门还包括在第一材料的内表面上形成为空隙的第二材料，并且包括与碳，铝或氮或其组合合金化的过渡金属，以形成碳化物，氮化物或氮化碳或其组合。

2. 发明授权

US5521537A Bus interface logic integrated circuit 失效
标题翻译：总线接口逻辑集成电路
公开(公告)号：US5521537A
公开(公告)日：1996-05-28
申请号：US363645
申请日：1994-12-22
申请人： Kyoung H. Kim
发明人： Kyoung H. Kim
IPC分类号： G06F13/36 , G06F13/38 , H03K19/0175
CPC分类号： G06F13/385
摘要： A bus interface logic integrated circuit having a function of bus interfacing a system bus with a higher-order module, including a programmable chip connected between the system bus and the higher-order module and adapted to bus interface the system bus and the higher-order module with each other, the programmable chip initiating transmission and receipt of data under a control of the higher-order module. The programmable chip includes input/output units for selecting data input and output between the system bus and the higher-order module, a part of the input/output units being connected to the system bus and the other input/output unit part being connected to the higher-order module, and a combination logic unit for combining parameters generated for the transmission and receipt of data between each of the system bus-side input/output units and each corresponding one of the higher-order module-side input/output units and outputting a value required for the transmission and receipt of data on the basis of the result of the combination.
摘要翻译：一种总线接口逻辑集成电路，具有总线将系统总线与高阶模块接口的功能，该系统总线包括连接在系统总线与高阶模块之间的可编程芯片，并适用于总线接口系统总线和高阶模块模块，可编程芯片在高阶模块的控制下启动传输和接收数据。可编程芯片包括用于选择系统总线和高阶模块之间的数据输入和输出的输入/输出单元，一部分输入/输出单元连接到系统总线，另一个输入/输出单元部分连接到高阶模块和组合逻辑单元，用于组合为每个系统总线侧输入/输出单元与高阶模块侧输入/输出单元中的每一个之间的数据的发送和接收而生成的参数并根据组合的结果输出发送和接收数据所需的值。

3. 发明授权

US5187954A Cooling device for washing machine transmission 失效
标题翻译：洗衣机传输冷却装置
公开(公告)号：US5187954A
公开(公告)日：1993-02-23
申请号：US790173
申请日：1991-11-12
申请人： Hyung S. Kim , Kyoung H. Kim
发明人： Hyung S. Kim , Kyoung H. Kim
IPC分类号： D06F37/30 , D06F37/40 , F16H57/04
CPC分类号： F16H57/0415 , D06F37/40
摘要： A washing machine includes a tub in which a basket and agitator are mounted. A transmission produces rotation of the basket and oscillation of the agitator. A shaft transmits rotary motion to the transmission from a motor via a pulley mounted on the shaft. The transmission includes a housing having heat conducting openings. Blades are mounted on the pulley for forcing air through the openings during rotation of the shaft.
摘要翻译：洗衣机包括安装有筐和搅拌器的桶。变速箱产生篮的旋转和搅拌器的振荡。轴经由安装在轴上的皮带轮从马达向传动装置传递旋转运动。变速器包括具有导热开口的壳体。刀片安装在滑轮上，以在轴的旋转期间迫使空气穿过开口。

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