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    • 7. 发明授权
    • Light emitting diode comprising semiconductor nanocrystal complexes
    • 包含半导体纳米晶体复合物的发光二极管
    • US08643052B2
    • 2014-02-04
    • US13446752
    • 2012-04-13
    • Kwang-Ohk Cheon
    • Kwang-Ohk Cheon
    • H01L33/00
    • H01L33/502B82Y20/00H01L33/56H01L33/644
    • A light emitting diode (LED) formed by depositing an LED chip and coupling a stability layer to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a nanocrystal complex layer. The nanocrystal complex layer is deposited on top of the stability layer. A thickness of the stability layer is chosen to maximizes a power of a light output by the nanocrystal complex layer. The matrix material and the stability layer can be of the same type of material. Additional layers of matrix material can be deposited on top of the nanocrystal complex layer. These additional layers can comprise matrix material only or can comprise matrix material and semiconductor nanocrystals to form another nanocrystal complex layer.
    • 通过沉积LED芯片并将稳定层耦合到LED芯片而形成的发光二极管(LED)。 将半导体纳米晶体放置在第一基质材料中以形成纳米晶体复合层。 纳米晶体复合层沉积在稳定层的顶部。 选择稳定层的厚度以使由纳米晶体复合层输出的光的功率最大化。 基质材料和稳定层可以是相同类型的材料。 可以在纳米晶体复合层的顶部上沉积附加的基质材料层。 这些附加层可以仅包含基质材料或可以包含基质材料和半导体纳米晶体以形成另一纳米晶体复合层。