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1. 发明授权

US09006050B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US09006050B2
公开(公告)日：2015-04-14
申请号：US13398883
申请日：2012-02-17
申请人： Kunio Hosoya , Saishi Fujikawa
发明人： Kunio Hosoya , Saishi Fujikawa
IPC分类号： H01L21/00 , H01L21/84 , H01L29/786 , H01L27/12 , H01L29/417 , H01L29/66
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/41733 , H01L29/66765 , H01L29/78609 , H01L29/78678
摘要： A first resist pattern is formed by exposure using a first multi-tone photomask, and a first conductive layer, a first insulating layer, a first semiconductor layer, and a second semiconductor layer are etched, so that an island-shaped single layer and an island-shaped stack are formed. Here, sidewalls are formed on side surfaces of the island-shaped single layer and the island-shaped stack. Further, a second resist pattern is formed by exposure using a second multi-tone photomask, and a second conductive layer and the second semiconductor layer are etched, so that a thin film transistor, a pixel electrode, and a connection terminal are formed. After that, a third resist pattern is formed by exposure from a rear side using metal layers of the first conductive layer and the second conductive layer as masks, and the third insulating layer are etched, so that a protective insulating layer is formed.
摘要翻译：通过使用第一多色调光掩模的曝光形成第一抗蚀剂图案，并且蚀刻第一导电层，第一绝缘层，第一半导体层和第二半导体层，使得岛状单层和形成岛状叠层。这里，在岛状单层和岛状叠层的侧面形成有侧壁。此外，通过使用第二多色调光掩模的曝光形成第二抗蚀剂图案，并且蚀刻第二导电层和第二半导体层，从而形成薄膜晶体管，像素电极和连接端子。之后，使用第一导电层和第二导电层的金属层作为掩模从后侧曝光形成第三抗蚀剂图案，并且蚀刻第三绝缘层，从而形成保护绝缘层。

2. 发明授权

US08878184B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08878184B2
公开(公告)日：2014-11-04
申请号：US13273802
申请日：2011-10-14
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： H01L29/04 , H01L27/12 , G02F1/1368 , H01L27/13
CPC分类号： G02F1/1368 , H01L27/12 , H01L27/1214 , H01L27/1255 , H01L27/1288 , H01L27/13
摘要： A display device having the high aperture ratio and a storage capacitor with high capacitance is to be obtained. The present invention relates to a display device and a manufacturing method thereof. The display device includes a thin film transistor which includes a gate electrode, a gate insulating film, a first semiconductor layer, a channel protective film, a second semiconductor having conductivity which is divided into a source region and a drain region, and a source electrode and a drain electrode; a third insulating layer formed over the second conductive film; a pixel electrode formed over the third insulating layer, which is connected to one of the source electrode and the drain electrode; and a storage capacitor formed in a region where a capacitor wiring over the first insulating layer and the pixel electrode are overlapped with the third insulating layer over the capacitor wiring interposed therebetween.
摘要翻译：可以获得具有高开口率的显示装置和具有高电容的存储电容器。显示装置及其制造方法技术领域本发明涉及显示装置及其制造方法。显示装置包括薄膜晶体管，其包括栅极电极，栅极绝缘膜，第一半导体层，沟道保护膜，具有分为源极区域和漏极区域的导电性的第二半导体以及源极电极和漏电极; 形成在所述第二导电膜上的第三绝缘层; 形成在所述第三绝缘层上的像素电极，所述像素电极连接到所述源电极和所述漏极之一; 以及形成在第一绝缘层和像素电极上的电容布线与介于其间的电容器布线上的第三绝缘层重叠的区域中的存储电容器。

3. 发明授权

US08519398B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08519398B2
公开(公告)日：2013-08-27
申请号：US13423874
申请日：2012-03-19
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： H01L29/10 , H01L27/14 , G02F1/1333
CPC分类号： G02F1/136213 , G02F1/133345 , G02F1/136227
摘要： In a pixel portion, a scan signal line and an auxiliary capacitor line are formed using a second conductive film, and a data signal line is formed using a first conductive film. In a TFT portion, a gate electrode is formed using the first conductive film and electrically connected to the scan signal line formed using the second conductive film through an opening in a gate insulating film. Further, a source electrode and a drain electrode are formed using the second conductive film. In the auxiliary capacitor portion, the auxiliary capacitor line formed using the second conductive film serves as a lower electrode, the pixel electrode serves as an upper electrode, and the passivation film used as a dielectric film is interposed between the capacitor electrodes.
摘要翻译：在像素部分中，使用第二导电膜形成扫描信号线和辅助电容线，并且使用第一导电膜形成数据信号线。在TFT部分中，使用第一导电膜形成栅极，并通过栅极绝缘膜中的开口与使用第二导电膜形成的扫描信号线电连接。此外，使用第二导电膜形成源电极和漏电极。在辅助电容器部分中，使用第二导电膜形成的辅助电容线用作下电极，像素电极用作上电极，并且用作电介质膜的钝化膜介于电容器电极之间。

4. 发明授权

US08395746B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08395746B2
公开(公告)日：2013-03-12
申请号：US11648582
申请日：2007-01-03
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： G02F1/1333 , G02F1/1345
CPC分类号： G02F1/133305 , G02F1/133308 , G02F1/134309 , G02F1/134363 , G02F1/1345 , G02F1/13452 , G02F2001/13456
摘要： It is an object of the present invention to provide a display device where expansion of a frame portion over a substrate, which results from formation of a lead wiring over an active matrix substrate, is minimally suppressed to realize a narrow frame. According to one feature of a display device of the present invention, a chamfer portion is formed at least at an end portion of an active matrix substrate having a pixel portion of a pair of substrates disposed to be opposed to each other, and wirings (a source line, a gate line, a storage capacitor line, a leading out wiring, and the like) over the active matrix substrate are electrically connected by a common wiring formed in the chamfer portion.
摘要翻译：本发明的目的是提供一种显示装置，其中通过有源矩阵基板上的引线布线形成的基板上的框架部分的扩展被最小限度地抑制以实现窄的框架。根据本发明的显示装置的一个特征，在有源矩阵基板的至少一端形成倒角部分，该有源矩阵基板具有彼此相对设置的一对基板的像素部分和布线（a 源极线，栅极线，保持电容线，引出布线等）通过形成在倒角部中的公共布线电连接。

5. 发明授权

US08212953B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08212953B2
公开(公告)日：2012-07-03
申请号：US11640048
申请日：2006-12-14
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： G02F1/136
CPC分类号： H01L27/1255 , G02F1/1362 , G02F1/136227 , G02F1/1368 , G02F2201/50 , H01L27/124
摘要： It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film formed so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed.
摘要翻译：本发明的目的是获得接触缺陷减小的液晶显示装置，接触电阻的增加被抑制，开口率高。本发明涉及具有基板的液晶显示装置; 设置在基板上的薄膜晶体管，其包括栅极布线，栅极绝缘膜，岛状半导体膜，源极区域和漏极区域; 源极布线，其设置在所述基板上并且连接到所述源极区域; 漏极，其设置在所述衬底上并连接到所述漏极区; 设置在基板上的辅助电容器; 连接到所述漏电极的像素电极; 以及保护膜，其形成为覆盖保护膜具有开口的薄膜晶体管和源极布线，并且辅助电容器形成在形成开口的区域中。

6. 发明申请

US20120149157A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120149157A1
公开(公告)日：2012-06-14
申请号：US13398883
申请日：2012-02-17
申请人： Kunio HOSOYA , Saishi FUJIKAWA
发明人： Kunio HOSOYA , Saishi FUJIKAWA
IPC分类号： H01L21/336
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/41733 , H01L29/66765 , H01L29/78609 , H01L29/78678
摘要： A first resist pattern is formed by exposure using a first multi-tone photomask, and a first conductive layer, a first insulating layer, a first semiconductor layer, and a second semiconductor layer are etched, so that an island-shaped single layer and an island-shaped stack are formed. Here, sidewalls are formed on side surfaces of the island-shaped single layer and the island-shaped stack. Further, a second resist pattern is formed by exposure using a second multi-tone photomask, and a second conductive layer and the second semiconductor layer are etched, so that a thin film transistor, a pixel electrode, and a connection terminal are formed. After that, a third resist pattern is formed by exposure from a rear side using metal layers of the first conductive layer and the second conductive layer as masks, and the third insulating layer are etched, so that a protective insulating layer is formed.
摘要翻译：通过使用第一多色调光掩模的曝光形成第一抗蚀剂图案，并且蚀刻第一导电层，第一绝缘层，第一半导体层和第二半导体层，使得岛状单层和形成岛状叠层。这里，在岛状单层和岛状叠层的侧面形成有侧壁。此外，通过使用第二多色调光掩模的曝光形成第二抗蚀剂图案，并且蚀刻第二导电层和第二半导体层，从而形成薄膜晶体管，像素电极和连接端子。之后，使用第一导电层和第二导电层的金属层作为掩模从后侧曝光形成第三抗蚀剂图案，并且蚀刻第三绝缘层，从而形成保护绝缘层。

7. 发明授权

US08148730B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08148730B2
公开(公告)日：2012-04-03
申请号：US12254603
申请日：2008-10-20
申请人： Kunio Hosoya , Saishi Fujikawa
发明人： Kunio Hosoya , Saishi Fujikawa
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/41733 , H01L29/66765 , H01L29/78609 , H01L29/78678
摘要： A first resist pattern is formed by exposure using a first multi-tone photomask, and a first conductive layer, a first insulating layer, a first semiconductor layer, and a second semiconductor layer are etched, so that an island-shaped single layer and an island-shaped stack are formed. Here, sidewalls are formed on side surfaces of the island-shaped single layer and the island-shaped stack. Further, a second resist pattern is formed by exposure using a second multi-tone photomask, and a second conductive layer and the second semiconductor layer are etched, so that a thin film transistor, a pixel electrode, and a connection terminal are formed. After that, a third resist pattern is formed by exposure from a rear side using metal layers of the first conductive layer and the second conductive layer as masks, and the third insulating layer are etched, so that a protective insulating layer is formed.
摘要翻译：通过使用第一多色调光掩模的曝光形成第一抗蚀剂图案，并且蚀刻第一导电层，第一绝缘层，第一半导体层和第二半导体层，使得岛状单层和形成岛状叠层。这里，在岛状单层和岛状叠层的侧面形成有侧壁。此外，通过使用第二多色调光掩模的曝光形成第二抗蚀剂图案，并且蚀刻第二导电层和第二半导体层，从而形成薄膜晶体管，像素电极和连接端子。之后，使用第一导电层和第二导电层的金属层作为掩模从后侧曝光形成第三抗蚀剂图案，并且蚀刻第三绝缘层，从而形成保护绝缘层。

8. 发明授权

US08138500B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08138500B2
公开(公告)日：2012-03-20
申请号：US12413717
申请日：2009-03-30
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： H01L29/10 , G02F1/1343
CPC分类号： G02F1/136213 , G02F1/133345 , G02F1/136227
摘要： In a pixel portion, a scan signal line and an auxiliary capacitor line are formed using a second conductive film, and a data signal line is formed using a first conductive film. In a TFT portion, a gate electrode is formed using the first conductive film and electrically connected to the scan signal line formed using the second conductive film through an opening in a gate insulating film. Further, a source electrode and a drain electrode are formed using the second conductive film. In the auxiliary capacitor portion, the auxiliary capacitor line formed using the second conductive film serves as a lower electrode, the pixel electrode serves as an upper electrode, and the passivation film used as a dielectric film is interposed between the capacitor electrodes.
摘要翻译：在像素部分中，使用第二导电膜形成扫描信号线和辅助电容线，并且使用第一导电膜形成数据信号线。在TFT部分中，使用第一导电膜形成栅极，并通过栅极绝缘膜中的开口与使用第二导电膜形成的扫描信号线电连接。此外，使用第二导电膜形成源电极和漏电极。在辅助电容器部分中，使用第二导电膜形成的辅助电容线用作下电极，像素电极用作上电极，并且用作电介质膜的钝化膜介于电容器电极之间。

9. 发明授权

US08048697B2 Method for manufacturing an LCD device employing a reduced number of photomasks including bottom and top gate type devices 有权
标题翻译：一种采用减少数量的光掩模的LCD装置的制造方法，包括底部和顶部栅极型器件
公开(公告)号：US08048697B2
公开(公告)日：2011-11-01
申请号：US12948834
申请日：2010-11-18
申请人： Saishi Fujikawa , Kunio Hosoya , Yoko Chiba
发明人： Saishi Fujikawa , Kunio Hosoya , Yoko Chiba
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , G02F2001/13606 , G02F2001/136231 , G02F2001/136236 , G02F2001/13625 , G02F2201/50 , H01L21/0273 , H01L21/31144 , H01L21/32139 , H01L27/1214
摘要： A manufacturing method of the present invention includes a process using a first multi-tone mask, in which a first conductive layer in which a transparent conductive layer and a metal layer are stacked over a substrate, a gate electrode formed of a first conductive layer, and a pixel electrode formed of a single layer of the transparent conductive layer are formed, a process using a second multi-tone mask, in which a contact hole to the pixel electrode, and an island of an i-type semiconductor layer and an n+ type semiconductor layer are formed after a gate insulating film, the i-type semiconductor layer, and the n+ type semiconductor layer are formed, a process using a third photomask, in which a source electrode and a drain electrode are formed after a second conductive layer is formed, and a process using a fourth photomask, in which an opening region is formed after a protective film is deposited.
摘要翻译：本发明的制造方法包括使用第一多色调掩模的工艺，其中在衬底上堆叠透明导电层和金属层的第一导电层，由第一导电层形成的栅电极，形成由透明导电层的单层形成的像素电极，使用第二多色调掩模的处理，其中与像素电极的接触孔和i型半导体层的岛和n + 在栅极绝缘膜，i型半导体层和n +型半导体层形成之后形成使用第三光掩模的工艺，其中在第二导电层之后形成源电极和漏电极以及使用第四光掩模的方法，其中在保护膜沉积之后形成开口区域。

10. 发明申请

US20100304538A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100304538A1
公开(公告)日：2010-12-02
申请号：US12842070
申请日：2010-07-23
申请人： Kunio HOSOYA , Saishi FUJIKAWA
发明人： Kunio HOSOYA , Saishi FUJIKAWA
IPC分类号： H01L21/84 , H01L21/336
CPC分类号： H01L27/1237 , H01L27/1214 , H01L27/127
摘要： To reduce variation among TFTs in manufacture of a semiconductor device including n-type thin film transistors and p-type thin film transistors. Further, another object of the present invention is to reduce the number of masks and manufacturing steps, and manufacturing time. A method of manufacturing a semiconductor device includes forming an island-shaped semiconductor layer of a first thin film transistor, then, forming an island-shaped semiconductor layer of the second thin film transistor. In the formation of the island-shaped semiconductor layer of the second thin film transistor, a gate insulating film in contact with the island-shaped semiconductor layer of the second thin film transistor is used as a protection film (an etching stopper film) for the island-shaped semiconductor layer of the first thin film transistor.
摘要翻译：为了减少在包括n型薄膜晶体管和p型薄膜晶体管的半导体器件的制造中的TFT之间的变化。此外，本发明的另一个目的是减少掩模的数量和制造步骤以及制造时间。制造半导体器件的方法包括形成第一薄膜晶体管的岛状半导体层，然后形成第二薄膜晶体管的岛状半导体层。在第二薄膜晶体管的岛状半导体层的形成中，使用与第二薄膜晶体管的岛状半导体层接触的栅极绝缘膜作为保护膜（蚀刻停止膜）第一薄膜晶体管的岛状半导体层。

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