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    • 1. 发明授权
    • Method and apparatus for preparing crystalline thin-films for
solid-state lasers
    • 用于制备固态激光器的晶体薄膜的方法和装置
    • US5851297A
    • 1998-12-22
    • US768226
    • 1996-12-17
    • Hiroshi KumagaiKouichi Toyoda
    • Hiroshi KumagaiKouichi Toyoda
    • B01J19/00B01J19/08C23C14/00C23C14/24C23C16/44C23C16/455C30B25/02C30B25/16H01S3/16H01S5/00C23C16/00
    • C30B25/02C23C16/45523C30B29/16Y10S117/904
    • The present invention has been achieved by perceiving the fact to the effect that a semiconductor production process-like manner such as CVD method or the like by which materials and film thickness can be controlled in an atomic scale may be utilized in case of preparing thin-film crystal, and employing such semiconductor production process-like manner being quite different from conventional technique. The invention relates to preparation of crystalline thin-films for solid-state lasers wherein a substrate contained in a vessel under a high vacuum condition is heated, materials for forming the laser material are supplied onto the surface of the aforesaid substrate in the form of gas, ion, single metal or metal compound to grow crystal on the surface of the aforesaid substrate, and a material of active ionic species is supplied onto the surface of the aforesaid substrate simultaneously with supply of the aforesaid materials for forming the laser host crystal, thereby controlling valence number of the material of active ionic species so as to be identical with the valence number of the metal ion constituting the crystal of the aforesaid laser host crystal.
    • 通过感知这样的事实已经实现了本发明,即在制备薄膜的情况下可以使用诸如CVD法等的半导体制造工艺等方式,其中可以以原子尺度控制材料和膜厚度, 薄膜晶体,并采用与半导体制造工艺相似的方式与传统技术截然不同。 本发明涉及用于固体激光器的结晶薄膜的制备,其中将包含在高真空条件下的容器中的基底加热,用于形成激光材料的材料以气体形式供应到上述基底的表面 ,离子,单金属或金属化合物在上述基材的表面上生长晶体,并且在提供用于形成激光主晶体的上述材料的同时,将上述基板的表面上提供活性离子物质的材料,从而 控制活性离子物质的物质的价数,以与构成上述激光主晶体的晶体的金属离子的价数相同。
    • 2. 发明授权
    • Method and apparatus for preparing crystalline thin-films for
solid-state lasers
    • 用于制备固态激光器的晶体薄膜的方法和装置
    • US5645638A
    • 1997-07-08
    • US590678
    • 1996-01-29
    • Hiroshi KumagaiKouichi Toyoda
    • Hiroshi KumagaiKouichi Toyoda
    • B01J19/00B01J19/08C23C14/00C23C14/24C23C16/44C23C16/455C30B25/02C30B25/16H01S3/16H01S5/00C30B25/14
    • C30B25/02C23C16/45523C30B29/16Y10S117/904
    • The present invention has been achieved by perceiving the fact to the effect that a semiconductor production process-like manner such as CVD method or the like by which materials and film thickness can be controlled in an atomic scale may be utilized in case of preparing thin-film crystal, and employing such semiconductor production process-like manner being quite different from conventional technique. The invention relates to preparation of crystalline thin-films for solid-state lasers wherein a substrate contained in a vessel under a high vacuum condition is heated, materials for forming the laser material are supplied onto the surface of the aforesaid substrate in the form of gas, ion, single metal or metal compound to grow crystal on the surface of the aforesaid substrate, and a material of active ionic species is supplied onto the surface of the aforesaid substrate simultaneously with supply of the aforesaid materials for forming the laser host crystal, thereby controlling valence number of the material of active ionic species so as to be identical with the valence number of the metal ion constituting the crystal of the aforesaid laser host crystal.
    • 通过感知这样的事实已经实现了本发明,即在制备薄膜的情况下可以使用诸如CVD法等的半导体制造工艺等方式,其中可以以原子尺度控制材料和膜厚度, 薄膜晶体,并采用与半导体制造工艺相似的方式与传统技术截然不同。 本发明涉及用于固体激光器的结晶薄膜的制备,其中将包含在高真空条件下的容器中的基底加热,用于形成激光材料的材料以气体形式供应到上述基底的表面 ,离子,单金属或金属化合物在上述基材的表面上生长晶体,并且在提供用于形成激光主晶体的上述材料的同时,将上述基板的表面上提供活性离子物质的材料,从而 控制活性离子物质的物质的价数,以与构成上述激光主晶体的晶体的金属离子的价数相同。
    • 4. 发明授权
    • Method for selecting wavelength in wavelength-tunable lasers and laser
oscillators capable of selecting wavelengths in wavelength-tunable
lasers
    • 在波长可调激光器中选择波长的方法和能够选择波长可调激光器中的波长的激光振荡器
    • US5734666A
    • 1998-03-31
    • US552515
    • 1995-11-09
    • Satoshi WadaKouichi ToyodaHideo Tashiro
    • Satoshi WadaKouichi ToyodaHideo Tashiro
    • H01S3/10H01S3/106
    • H01S3/1068
    • In order to eliminate a mechanically movable section, such as a rotation mechanism of a diffraction grating, to achieve a compact fabrication of the whole apparatus, and to realize stable action for selecting a wavelength, a laser oscillator selecting a wavelength in a wavelength-tunable laser is composed of a laser resonator consisting of a mirror on the input side and a mirror on the output side; a laser medium which is placed in the laser resonator and can oscillate in a predetermined range of wavelengths; a crystal to which is piezoelectric element is attached, the crystal receiving acoustic waves from the piezoelectric element in accordance with a desired wavelength; and a polarizing plate which is placed in the laser resonator and transmits only the output light beam having a prescribed plane of polarization or having a prescribed direction of light propagation among the output light beams from the laser medium. The apparatus thereby outputs only the desired wavelength.
    • 为了消除诸如衍射光栅的旋转机构的机械可移动部分,为了实现整个装置的紧凑的制造,并且为了实现选择波长的稳定动作,选择波长可调谐波长的激光振荡器 激光器由在输入侧的反射镜和输出侧的反射镜组成的激光谐振器组成; 激光介质,其被放置在激光谐振器中并且可以在预定波长范围内振荡; 安装有晶体的压电元件,所述晶体从所述压电元件接收根据期望波长的声波; 以及偏振板,其被放置在激光谐振器中,并且仅在来自激光介质的输出光束中仅透射具有规定的偏振面或具有规定的光传播方向的输出光束。 因此该装置仅输出期望的波长。