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    • 1. 发明授权
    • Rapid thermal annealing process
    • 快速热退火工艺
    • US07026171B2
    • 2006-04-11
    • US10604246
    • 2003-07-04
    • Y. Y. ChangShih-Liang ChouL. H. LeeTsung-De LinKou-Yow TsengWen-Cheng Lien
    • Y. Y. ChangShih-Liang ChouL. H. LeeTsung-De LinKou-Yow TsengWen-Cheng Lien
    • H01L21/00H01L21/66
    • H01L21/324H01L21/76801H01L22/20
    • A rapid thermal annealing (“RTA”) process providing for an RTA equipment is disclosed. The RTA equipment has a pyrometer providing for measuring an operation parameter, e.g., a temperature of the RTA process. The RTA process comprises steps of proceeding a first RTA step to a wafer in the RTA equipment, then comparing a measured value of the operation parameter with a reference range of value of the operation parameter, thereafter proceeding a second RTA step to the wafer in the RTA equipment when the measured value of the operation parameter is in between the reference range of value of the operation parameter. When the measured value of the operation parameter is out of the reference range of value of the operation parameter, the RTA equipment is turned off, and the wafer is unloaded from the RTA equipment and loaded into another RTA equipment to complete the RTA process.
    • 公开了提供RTA设备的快速热退火(“RTA”)工艺。 RTA设备具有高温计,用于测量操作参数,例如RTA工艺的温度。 RTA方法包括以下步骤:在RTA设备中的晶片上进行第一RTA步骤,然后将操作参数的测量值与操作参数值的参考范围进行比较,然后在第二RTA步骤中进行第二RTA步骤 RTA设备当操作参数的测量值在操作参数值的参考范围之间时。 当操作参数的测量值超出操作参数值的参考范围时,RTA设备被关闭,晶片从RTA设备卸载并加载到另一个RTA设备中以完成RTA过程。