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1. 发明授权

US08633593B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08633593B2
公开(公告)日：2014-01-21
申请号：US13427758
申请日：2012-03-22
申请人： Akira Ide , Koji Torii
发明人： Akira Ide , Koji Torii
IPC分类号： H01L21/469
CPC分类号： H01L23/562 , H01L21/308 , H01L21/76898 , H01L23/481 , H01L23/5384 , H01L23/585 , H01L25/0657 , H01L2224/16 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565
摘要： A semiconductor device includes a semiconductor substrate; and a through electrode that penetrates the semiconductor substrate. The semiconductor substrate has a groove structure that is positioned between a peripheral edge of the semiconductor substrate and the through electrode.
摘要翻译：半导体器件包括半导体衬底; 以及贯通半导体基板的贯通电极。半导体衬底具有位于半导体衬底的周边边缘和贯通电极之间的沟槽结构。

2. 发明申请

US20070243796A1 METHOD AND APPARATUS FOR POLISHING A WAFER WITH A HIGHER IN-PLANE UNIFORMITY 审中-公开
标题翻译：用于抛光具有更高的平面均匀性的波形的方法和装置
公开(公告)号：US20070243796A1
公开(公告)日：2007-10-18
申请号：US11734622
申请日：2007-04-12
申请人： Koji TORII
发明人： Koji TORII
IPC分类号： B24B51/00 , B24B1/00 , B24B49/00 , B24B7/30 , B24B29/00
CPC分类号： B24B49/00 , B24B37/32
摘要： A wear thickness for a retainer ring is measured at a specified timing. The height of the retainer ring or the polishing condition of the polishing apparatus is changed in an amount greater than or equal to the wear thickness of the retainer ring. This compensates for the wear thickness of the retainer ring which degrades the within wafer uniformity of polishing rate due to a change in the bottom surface of the retainer ring.
摘要翻译：在规定的时刻测量保持环的磨损厚度。保持环的高度或抛光装置的抛光状态的变化量大于或等于保持环的磨损厚度。这补偿了保持环的磨损厚度，这会降低由于保持环的底面的变化引起的晶圆内部抛光速率均匀性的均匀性。

3. 发明申请

US20120241917A1 SEMICONDUCTOR CHIP, METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP, AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体芯片，制造半导体芯片的方法和半导体器件
公开(公告)号：US20120241917A1
公开(公告)日：2012-09-27
申请号：US13427758
申请日：2012-03-22
申请人： Akira IDE , Koji Torii
发明人： Akira IDE , Koji Torii
IPC分类号： H01L23/498
CPC分类号： H01L23/562 , H01L21/308 , H01L21/76898 , H01L23/481 , H01L23/5384 , H01L23/585 , H01L25/0657 , H01L2224/16 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565
摘要： A semiconductor device includes a semiconductor substrate; and a through electrode that penetrates the semiconductor substrate. The semiconductor substrate has a groove structure that is positioned between a peripheral edge of the semiconductor substrate and the through electrode.
摘要翻译：半导体器件包括半导体衬底; 以及贯通半导体基板的贯通电极。半导体衬底具有位于半导体衬底的周边边缘和贯通电极之间的沟槽结构。

4. 发明授权

US06432825B1 Semiconductor device production method 失效
标题翻译：半导体器件生产方法
公开(公告)号：US06432825B1
公开(公告)日：2002-08-13
申请号：US09447216
申请日：1999-11-23
申请人： Koji Torii
发明人： Koji Torii
IPC分类号： H01L21302
CPC分类号： H01L21/32115
摘要： To provide a semiconductor device production method capable of solving the problem of the latent period of time in which polishing is hardly performed immediately after a polishing start. In order to reduce the latent period of time caused immediately after a metal film polishing start, the polishing process is preceded by an oxide removal step for removing oxide from an object to be polished.
摘要翻译：为了提供能够解决在抛光开始后立即进行抛光的潜在时间的问题的半导体器件制造方法。为了减少在金属膜研磨开始后立即引起的潜在时间，抛光处理之前是用于从待抛光对象去除氧化物的氧化物去除步骤。

5. 发明授权

US07722439B2 Semiconductor device manufacturing apparatus and method 有权
标题翻译：半导体器件制造装置及方法
公开(公告)号：US07722439B2
公开(公告)日：2010-05-25
申请号：US11950496
申请日：2007-12-05
申请人： Koji Torii
发明人： Koji Torii
IPC分类号： B24B7/22
CPC分类号： B24B37/32
摘要： A semiconductor device manufacturing apparatus according to the present invention comprises a head for holding a semiconductor wafer, a retainer ring for surrounding the outer periphery of the semiconductor wafer held by the head, and a polishing pad for polishing a polished surface of the semiconductor wafer. This apparatus presses the polished surface of the semiconductor wafer against the polishing pad together with the retainer ring to polish the semiconductor wafer. The retainer ring used in the present invention has a surface that is in contact with the polishing pad, which increases a contact area of the retainer ring against the polishing pad in accordance with wear of the retainer ring.
摘要翻译：根据本发明的半导体器件制造设备包括用于保持半导体晶片的头部，用于围绕由头部保持的半导体晶片的外周的保持环和用于抛光半导体晶片的抛光表面的抛光垫。该装置将半导体晶片的抛光表面与保持环一起压靠抛光垫以抛光半导体晶片。本发明中使用的保持环具有与抛光垫接触的表面，其根据保持环的磨损增加了保持环抵靠抛光垫的接触面积。

6. 发明申请

US20080146123A1 SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND METHOD 有权
标题翻译：半导体器件制造设备和方法
公开(公告)号：US20080146123A1
公开(公告)日：2008-06-19
申请号：US11950496
申请日：2007-12-05
申请人： Koji TORII
发明人： Koji TORII
IPC分类号： B24B7/00
CPC分类号： B24B37/32
摘要： A semiconductor device manufacturing apparatus according to the present invention comprises a head for holding a semiconductor wafer, a retainer ring for surrounding the outer periphery of the semiconductor wafer held by the head, and a polishing pad for polishing a polished surface of the semiconductor wafer. This apparatus presses the polished surface of the semiconductor wafer against the polishing pad together with the retainer ring to polish the semiconductor wafer. The retainer ring used in the present invention has a surface that is in contact with the polishing pad, which increases a contact area of the retainer ring against the polishing pad in accordance with wear of the retainer ring.
摘要翻译：根据本发明的半导体器件制造设备包括用于保持半导体晶片的头部，用于围绕由头部保持的半导体晶片的外周的保持环和用于抛光半导体晶片的抛光表面的抛光垫。该装置将半导体晶片的抛光表面与保持环一起压靠抛光垫以抛光半导体晶片。本发明中使用的保持环具有与抛光垫接触的表面，其根据保持环的磨损增加了保持环抵靠抛光垫的接触面积。

7. 发明授权

US5725420A Polishing device having a pad which has grooves and holes 失效
标题翻译：抛光装置具有具有凹槽和孔的垫
公开(公告)号：US5725420A
公开(公告)日：1998-03-10
申请号：US731916
申请日：1996-10-22
申请人： Koji Torii
发明人： Koji Torii
IPC分类号： B24B37/20 , B24B37/22 , B24B37/24 , B24B37/26 , B24D13/14 , H01L21/304 , B24B5/00
CPC分类号： B24B37/26
摘要： Shallow grooves are formed on the surface of a hard layer of a polishing pad for polishing the wafer so as to join a plurality of. Since the grooves are formed for causing no negative pressure between the polishing pad and the wafer, the distance between the grooves is made more than several times as large as the pitch between the holes.
摘要翻译：在抛光垫的硬质层的表面上形成浅槽，用于抛光晶片以便连接多个。由于形成凹槽以在抛光垫和晶片之间不产生负压，所以槽之间的距离大于孔之间的间距的几倍。

8. 发明申请

US20070281485A1 Method of and apparatus for semiconductor device 审中-公开
标题翻译：半导体器件的方法和装置
公开(公告)号：US20070281485A1
公开(公告)日：2007-12-06
申请号：US11806395
申请日：2007-05-31
申请人： Koji Torii
发明人： Koji Torii
IPC分类号： H01L21/461 , H01L21/306
CPC分类号： B24B37/042 , B24B49/16
摘要： A semiconductor device fabrication method by which a semiconductor wafer is polished by pressing the semiconductor wafer against a polishing pad includes: an optimum condition calculation step for finding polishing conditions based on the hardness of the polishing pad; and a step of polishing the semiconductor wafer according to the polishing conditions that have been found.
摘要翻译：通过将半导体晶片压靠在抛光垫上来研磨半导体晶片的半导体器件制造方法包括：最佳条件计算步骤，用于根据抛光垫的硬度求出抛光条件; 以及根据已经发现的研磨条件来研磨半导体晶片的步骤。

9. 外观设计

USD504632S1 Pedometer 失效
标题翻译：计步器
公开(公告)号：USD504632S1
公开(公告)日：2005-05-03
申请号：US29180512
申请日：2003-04-25
申请人： Shin Nishiura , Koji Torii , Nobuo Kubo , Hiroshi Ogawa
设计人： Shin Nishiura , Koji Torii , Nobuo Kubo , Hiroshi Ogawa

10. 发明授权

US06213847B1 Semiconductor wafer polishing device and polishing method thereof 有权
标题翻译：半导体晶片抛光装置及其抛光方法
公开(公告)号：US06213847B1
公开(公告)日：2001-04-10
申请号：US09311278
申请日：1999-05-14
申请人： Koji Torii
发明人： Koji Torii
IPC分类号： B24B4900
CPC分类号： B24B37/005 , B24B1/00 , B24B37/04 , B24B49/02 , B24B51/00 , H01L21/31053
摘要： A semiconductor wafer polishing device is capable of improving controllability of a residual layer thickness and improving a production ability. The semiconductor wafer polishing device performs polishing of an interlayer insulation layer on a semiconductor wafer by performing divided polishing for the interlayer insulation layer by means of a platen, measuring a layer thickness of the interlayer insulation layer during a polishing process by the platen, and performing final polishing depending upon a result of measurement.
摘要翻译：半导体晶片研磨装置能够提高残留层厚度的控制性，提高生产能力。半导体晶片抛光装置通过对压层进行层间绝缘层的分层研磨，在平板印刷机的研磨处理中测定层间绝缘层的层厚，对半导体晶片进行层间绝缘层的研磨，根据测量结果进行最终抛光。

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