会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Nonvolatile semiconductor memory device and method for fabricating the same
    • 非易失性半导体存储器件及其制造方法
    • US07791121B2
    • 2010-09-07
    • US12166069
    • 2008-07-01
    • Koichi KawashimaKeita Takahashi
    • Koichi KawashimaKeita Takahashi
    • H01L27/108
    • H01L27/115H01L27/11568
    • A nonvolatile semiconductor memory device includes bit line diffusion layers extending along the X direction in an upper portion of a semiconductor substrate; and gate structures extending along the Y direction on the semiconductor substrate and each including a charge trapping film and a gate electrode. The nonvolatile semiconductor memory device further includes a first interlayer insulating film in which first contacts respectively connected to the bit line diffusion layers are formed; and second contacts that penetrate through a UV blocking film and a second interlayer insulating film formed on the first interlayer insulating film and have bottom faces respectively in contact with the first contacts and top faces respectively in contact with metal interconnections.
    • 非易失性半导体存储器件包括在半导体衬底的上部沿X方向延伸的位线扩散层; 以及在半导体衬底上沿着Y方向延伸的栅极结构,并且每个栅极结构包括电荷捕获膜和栅电极。 非易失性半导体存储器件还包括第一层间绝缘膜,其中分别连接到位线扩散层的第一触点形成; 以及穿过UV阻挡膜的第二触点和形成在第一层间绝缘膜上的第二层间绝缘膜,并且分别具有分别与第一触头和顶面接触的底面与金属互连接触的第二触点。