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1. 发明授权

US07295646B1 Method for producing a coating for absorption of neutrons produced in nuclear reactions of radioactive materials 有权
标题翻译：生产放射性物质核反应产生的中子吸收涂层的方法
公开(公告)号：US07295646B1
公开(公告)日：2007-11-13
申请号：US09856816
申请日：1999-09-27
申请人： Klaus-Leo Wilbuer , Rudolf Diersch , Hermann Stelzer , Matthias Patzelt , Dieter Methling
发明人： Klaus-Leo Wilbuer , Rudolf Diersch , Hermann Stelzer , Matthias Patzelt , Dieter Methling
IPC分类号： G21C7/00 , G21C11/00
CPC分类号： G21F1/08 , C23C18/31 , C25D7/00 , C25D21/10 , G21Y2002/201 , G21Y2002/301 , G21Y2002/302 , G21Y2002/304 , G21Y2004/30 , G21Y2004/40
摘要： The invention relates to a method for producing a coating for absorption of neutrons produced in nuclear reactions of radioactive material which can be applied in an economically feasible and simple manner, increases the effectivity of absorption, enables greater variability of base material used and variability of shape of said shielding elements and in particular the production of lighter shielding elements with at least the same absorption quality. The invention also relates to a method for producing a coating for absorption of neutrons produced in nuclear reactions of radioactive materials. At least one part of a shielding element consisting of base material is provided at its surface designed therefore with a layer made of an element with a high neutron capture section and a metallic element in a dispersion bath. Said metallic element can be deposited by electrolytic or autocatalytic means. During the coating process, a relative movement between a surface to be coated and a dispersion bath is effected at least temporarily, whereby the element with a larger neutron capture section is present in an electrically conducting compound in said dispersion bath.
摘要翻译：本发明涉及一种生产用于吸收在放射性物质的核反应中产生的中子的涂层的方法，其可以以经济可行和简单的方式应用，增加吸收的有效性，使得使用的基体材料的变异性和形状的变化性的所述屏蔽元件，特别是产生具有至少相同吸收质量的更轻的屏蔽元件。本发明还涉及一种用于生产用于吸收在放射性材料的核反应中产生的中子的涂层的方法。由基材构成的屏蔽元件的至少一部分在其表面设置，因此具有由具有高中子俘获部分的元件和分散浴中的金属元件制成的层。所述金属元素可以通过电解或自动催化方式沉积。在涂布过程中，待涂覆表面和分散浴之间的相对运动至少暂时进行，由此具有较大中子俘获部分的元件存在于所述分散浴中的导电化合物中。

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