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    • 4. 发明授权
    • Arrangement for production of explosively formed projectiles
    • 爆炸性弹丸的生产安排
    • US4982667A
    • 1991-01-08
    • US268453
    • 1988-10-28
    • Klaus Weimann
    • Klaus Weimann
    • F42B1/02F42B1/028
    • F42B1/02F42B1/028Y10S102/701
    • An arrangement for production of explosively formed projectiles consists of casing with explosive contents, a fuse arranged on the base side and a metal insert which covers the explosive contents on the head side, in which case the projectile acquires wing-like symmetrical folds on its tail by means of the following. The insert and/or the explosive contents and/or the fuse in their outside area and/or the casing on its jacket features at least three inhomogeneities arranged at a distance from the axis of the casing in a symmetrical manner around the circumference such that in the circumferential area of the insert varied. Acceleration is achieved according to the configuration of the inhomogeneities or the impact time of the shock wave or its impact energy is different.
    • 爆炸形成的弹丸的生产安排包括一个具有爆炸物的外壳,一个位于基座侧的保险丝和一个覆盖头部的炸药内容物的金属插件,在这种情况下,弹丸就能在其上获得翼状的对称褶皱 尾巴通过以下方式。 其外部区域和/或外壳上的插入物和/或炸药内容物和/或保险丝具有至少三个不均匀性,其以围绕圆周的对称方式布置在与壳体的轴线一定距离处,使得在 刀片的圆周面积变化。 根据不均匀性的构型或冲击波的冲击时间或其冲击能量的不同,实现加速度。
    • 5. 发明授权
    • Thyristor with two control terminals and control device
    • 具有两个控制端子和控制装置的晶闸管
    • US4223331A
    • 1980-09-16
    • US922098
    • 1978-07-05
    • Elmar MullerKlaus Weimann
    • Elmar MullerKlaus Weimann
    • H01L29/74
    • H01L29/74
    • A thyristor having a common-anode main thyristor and auxiliary thyristor combination integrated in a semiconductor chip with at least four alternating zones of different conductivity types. A first control electrode contacts a small-area control zone recessed in an emitter region. A first ring zone which is at least as highly n-doped as an emitter zone is disposed in the recessed control zone and is partially contacted by a second control electrode, as is also a portion of a p-doped base zone emerging at various places on the chip surface, the p-doped base zone forming a shorted auxiliary emitter. The second control electrode as well as the first control electrode, have leads separately brought out of the thyristor case, as are leads connected to a main cathode terminal and an auxiliary cathode terminal. The second control electrode together with the auxiliary cathode terminal can be used as a trigger-pulse source, or the second control electrode can alone be used as the trigger input to the thyristor.
    • 具有共阳极主晶闸管和辅助晶闸管组合的晶闸管集成在具有不同导电类型的至少四个交替区域的半导体芯片中。 第一控制电极接触凹陷在发射极区域中的小区域控制区域。 至少与发射极区域n掺杂的第一环区域设置在凹陷控制区域中,并且被第二控制电极部分地接触,同样也是在各个地方出现的p掺杂的基极区域的一部分 在芯片表面上,p掺杂的基极区形成短路的辅助发射极。 第二控制电极以及第一控制电极具有分别从晶闸管壳体引出的引线,以及连接到主阴极端子和辅助阴极端子的引线。 第二控制电极与辅助阴极端子一起可以用作触发脉冲源,或者第二控制电极可以单独用作对晶闸管的触发输入。