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1. 发明授权

US5968426A Method of producing porous silicon nitride ceramics having high strength and low thermal conductivity 失效
标题翻译：制造高强度，低导热性的多孔氮化硅陶瓷的制造方法
公开(公告)号：US5968426A
公开(公告)日：1999-10-19
申请号：US787019
申请日：1997-01-29
申请人： Kiyoshi Hirao , Manuel E. Brito , Motohiro Toriyama , Syuzo Kanzaki , Hisayuki Imamura , Takene Hirai , Yasuhiro Shigegaki
发明人： Kiyoshi Hirao , Manuel E. Brito , Motohiro Toriyama , Syuzo Kanzaki , Hisayuki Imamura , Takene Hirai , Yasuhiro Shigegaki
IPC分类号： F02B39/00 , C04B35/626 , C04B38/00 , C04B34/584
CPC分类号： C04B38/00
摘要： The present invention relates to a method for producing a porous silicon nitride sintered body having high strength and low thermal conductivity, which comprises of adding more than 10 volume % of rodlike beta-silicon nitride single crystals with a larger mean diameter than that of a silicon nitride raw powder into a mixture comprising the silicon nitride raw powder and a sintering additive, preparing a formed body with rodlike beta-silicon nitride single crystals oriented parallel to the casting plane according to a forming technique such as sheet casting and extrusion forming, sintering said formed body to develop elongated silicon nitride grains from the added rodlike beta-silicon nitride single crystals as nuclei and obtain the sintered body with the elongated grains being dispersed in a complicated state.
摘要翻译：本发明涉及一种具有高强度和低导热性的多孔氮化硅烧结体的制造方法，该方法包括加入大于10体积％的具有比硅的更大的平均直径的棒状β-氮化硅单晶氮化物原料粉末混合成包含氮化硅原料粉末和烧结添加剂的混合物，根据成型技术如片材流延和挤出成型制备具有平行于铸造平面取向的棒状β-氮化硅单晶的成形体，烧结所述从加成的棒状β-氮化硅单晶作为核形成长长的氮化硅晶粒，并获得具有细长晶粒的复合状态的烧结体。

2. 发明申请

US20070135292A1 BORON CARBIDE BASED SINTERED COMPACT AND METHOD FOR PREPARATION THEREOF 有权
标题翻译：基于碳硼化物的烧结紧凑型及其制备方法
公开(公告)号：US20070135292A1
公开(公告)日：2007-06-14
申请号：US11618020
申请日：2006-12-29
申请人： Kiyoshi HIRAO , Shuji Sakaguchi , Yukihiko Yamauchi , Shuzo Kanzaki , Suzuya Yamada
发明人： Kiyoshi HIRAO , Shuji Sakaguchi , Yukihiko Yamauchi , Shuzo Kanzaki , Suzuya Yamada
IPC分类号： C04B35/563
CPC分类号： C04B35/645 , B82Y30/00 , C04B35/563 , C04B35/64 , C04B2235/3231 , C04B2235/3232 , C04B2235/3813 , C04B2235/3821 , C04B2235/422 , C04B2235/424 , C04B2235/528 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/604 , C04B2235/656 , C04B2235/6562 , C04B2235/658 , C04B2235/6581 , C04B2235/661 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/94 , C04B2235/96
摘要： A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 μm. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 μm, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 μm to boron carbide particles having a particle diameter of at most 5 μm, is from 0.02 to 0.6.
摘要翻译：具有至少400MPa的四点弯曲强度和至少2.8MPa.m 1/2的断裂韧性的碳化硼基烧结体，其具有以下两个优选实施方案。（1）一种碳化硼 - 二硼化钛烧结体，其通过将B 4 S粉末，TiO 2粉末和C粉末的混合粉末烧结而得到，同时使它们在加压条件为95〜70摩尔％的碳化硼和5〜30摩尔％的二硼化钛，其中，碳化硼的最大粒径为5μm以下。（2）在B 4 C中含有10〜25摩尔％的CrB 2 N 2的碳化硼 - 二硼化铬烧结体，其中，所述烧结体的相对密度为至少90％的烧结体中的碳化硼粒子的最大粒径为100μm以下，碳化硼粒子为10〜100μm的丰度比（面积比）与粒径为最多5颗，从0.02到0.6。

3. 发明授权

US07417002B2 Boron carbide based sintered compact and method for preparation thereof 有权
公开(公告)号：US07417002B2
公开(公告)日：2008-08-26
申请号：US11927024
申请日：2007-10-29
申请人： Kiyoshi Hirao , Shuji Sakaguchi , Yukihiko Yamauchi , Shuzo Kanzaki , Suzuya Yamada
发明人： Kiyoshi Hirao , Shuji Sakaguchi , Yukihiko Yamauchi , Shuzo Kanzaki , Suzuya Yamada
IPC分类号： C04B35/563 , C04B35/58
CPC分类号： C04B35/645 , B82Y30/00 , C04B35/563 , C04B35/64 , C04B2235/3231 , C04B2235/3232 , C04B2235/3813 , C04B2235/3821 , C04B2235/422 , C04B2235/424 , C04B2235/528 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/604 , C04B2235/656 , C04B2235/6562 , C04B2235/658 , C04B2235/6581 , C04B2235/661 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/94 , C04B2235/96
摘要： A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 μm. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 μm, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 μm to boron carbide particles having a particle diameter of at most 5 μm, is from 0.02 to 0.6.

4. 发明申请

US20080063583A1 BORON CARBIDE BASED SINTERED COMPACT AND METHOD FOR PREPARATION THEREOF 有权
标题翻译：基于碳硼化物的烧结紧凑型及其制备方法
公开(公告)号：US20080063583A1
公开(公告)日：2008-03-13
申请号：US11927024
申请日：2007-10-29
申请人： Kiyoshi Hirao , Shuji Sakaguchi , Yukihiko Yamauchi , Shuzo Kanzaki , Suzuya Yamada
发明人： Kiyoshi Hirao , Shuji Sakaguchi , Yukihiko Yamauchi , Shuzo Kanzaki , Suzuya Yamada
IPC分类号： C01B31/36
CPC分类号： C04B35/645 , B82Y30/00 , C04B35/563 , C04B35/64 , C04B2235/3231 , C04B2235/3232 , C04B2235/3813 , C04B2235/3821 , C04B2235/422 , C04B2235/424 , C04B2235/528 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/604 , C04B2235/656 , C04B2235/6562 , C04B2235/658 , C04B2235/6581 , C04B2235/661 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/94 , C04B2235/96
摘要： A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 μm. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 μm, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 μm to boron carbide particles having a particle diameter of at most 5 μm, is from 0.02 to 0.6.
摘要翻译：具有至少400MPa的四点弯曲强度和至少2.8MPa.m 1/2的断裂韧性的碳化硼基烧结体，其具有以下两个优选实施方案。（1）一种碳化硼 - 二硼化钛烧结体，其通过将B 4 S粉末，TiO 2粉末和C粉末的混合粉末烧结而得到，同时使它们在加压条件为95〜70摩尔％的碳化硼和5〜30摩尔％的二硼化钛，其中，碳化硼的最大粒径为5μm以下。（2）在B 4 C中含有10〜25摩尔％的CrB 2 N 2的碳化硼 - 二硼化铬烧结体，其中，所述烧结体的相对密度为至少90％的烧结体中的碳化硼粒子的最大粒径为100μm以下，碳化硼粒子为10〜100μm的丰度比（面积比）与粒径为最多5颗，从0.02到0.6。

5. 发明授权

US5935888A Porous silicon nitride with rodlike grains oriented 失效
标题翻译：多孔氮化硅，棒状晶粒取向
公开(公告)号：US5935888A
公开(公告)日：1999-08-10
申请号：US848224
申请日：1997-04-29
申请人： Motohiro Toriyama , Kiyoshi Hirao , Manuel E. Brito , Syuzo Kanzaki , Yasuhiro Shigegaki
发明人： Motohiro Toriyama , Kiyoshi Hirao , Manuel E. Brito , Syuzo Kanzaki , Yasuhiro Shigegaki
IPC分类号： B28B3/02 , C04B30/02 , C04B35/622 , C04B35/626 , C04B35/64 , C04B38/00 , C04B35/584
CPC分类号： C04B38/00 , C04B30/02 , C04B38/0051
摘要： An object of the present invention is to provide a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, and a method for producing the same, and the present invention relates to a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, characterized in that rodlike grains of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 are oriented in a single direction, and the rest of the structure other than the rodlike grains consists solely of pores with a porosity of 5 to 30%, and further the above-mentioned porous silicon nitride is produced by mixing rodlike particles of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 as the silicon nitride with an auxiliary that serves to bind the rodlike particles, forming a tape in which the silicon nitride rodlike particles are oriented in a single direction by sheet forming, extrusion forming, or another such forming process, and sintering this product in a nitrogen atmosphere after lamination and degreasing of it.
摘要翻译：本发明的目的是提供一种相对于应变和应力具有很大公差的高孔隙率高强度多孔氮化硅及其制造方法，本发明涉及高孔隙率，高 - 相对于应变和应力具有很大公差的强度多孔氮化硅，其特征在于，小直径为0.5至10μm，长宽比为10至100的氮化硅棒状晶粒沿单一方向取向，并且杆状颗粒以外的结构的其余部分仅由孔隙率为5〜30％的孔组成，进一步通过将氮化硅的棒状颗粒与0.5〜10μm的小直径混合而制成上述多孔氮化硅长宽比为10〜100，作为氮化硅与辅助材料，用于粘合棒状颗粒，形成其中氮化硅棒状颗粒沿着单一方向取向的带等等，形成，挤出成型或另一种这样的成型方法，并在层压和脱脂之后在氮气气氛中烧结该产品。

6. 发明授权

US5866245A Silicon nitride ceramics having a high reliability and a method for production thereof 失效
标题翻译：具有高可靠性的氮化硅陶瓷及其制造方法
公开(公告)号：US5866245A
公开(公告)日：1999-02-02
申请号：US773004
申请日：1996-12-23
申请人： Motohiro Toriyama , Kiyoshi Hirao , Manuel E. Brito , Syuzo Kanzaki , Yasuhiro Shigegaki
发明人： Motohiro Toriyama , Kiyoshi Hirao , Manuel E. Brito , Syuzo Kanzaki , Yasuhiro Shigegaki
IPC分类号： B32B5/10 , B32B5/14 , B32B18/00 , C04B35/584 , C04B35/593 , C04B35/622 , C04B35/58
CPC分类号： C04B35/593 , B32B18/00 , C04B35/5935 , C04B35/645 , C04B35/6455 , C04B2235/658 , C04B2237/368 , C04B2237/38 , C04B2237/525 , C04B2237/586 , C04B2237/704 , Y10T428/24942 , Y10T428/24975 , Y10T428/249967 , Y10T428/249969 , Y10T428/249981 , Y10T428/249987 , Y10T428/249988 , Y10T428/249991
摘要： The present invention relates to a silicon nitride sintered body having a remarkably increased strain-to-fracture, a low elasticity and high strength, characterized by consisting of a layered structure of alternating porous silicon nitride layers 1 to 1000 .mu.m thick with a porosity of 5 to 70 volume % and dense silicon nitride layers 1 to 1000 .mu.m thick with a porosity of less than 5 volume %, being layered as materials with optional tiers. In addition, this invention relates to a method for producing the silicon nitride sintered body as described above, which comprises of forming dense layers and porous layers by sheet casting or extrusion forming so as to prepare the layers to be capable of 1 to 1000 .mu.m thick after sintering, stacking them to obtain layered materials with optional tiers and sintering them at 1600.degree. to 2100 .degree. C. under a nitrogen atmosphere.
摘要翻译：本发明涉及一种具有显着增加的应变 - 断裂，低弹性和高强度的氮化硅烧结体，其特征在于，由层叠结构的层叠结构构成，所述交替多孔氮化硅层的厚度为1-1000μm，孔隙率为 5至70体积％，并且具有小于5体积％的孔隙率为1至1000μm厚的致密氮化硅层，被层叠为具有任选层的材料。另外，本发明涉及一种如上所述的氮化硅烧结体的制造方法，其特征在于，通过片状铸造或挤压成形来形成致密层和多孔层，以制备能够达到1〜1000μm的层烧结后将其堆叠，得到可选层的层状材料，并在氮气氛下在1600〜2100℃烧结。

7. 发明授权

US5674793A Method for producing a high-strength, high-toughness silicon nitride sinter 失效
标题翻译：高强度，高韧性氮化硅烧结体的制造方法
公开(公告)号：US5674793A
公开(公告)日：1997-10-07
申请号：US529854
申请日：1995-09-18
申请人： Kiyoshi Hirao , Manuel E. Brito , Shuzo Kanzaki
发明人： Kiyoshi Hirao , Manuel E. Brito , Shuzo Kanzaki
IPC分类号： C30B1/02 , C04B35/584 , C04B35/593 , C04B35/626 , C30B29/62 , C04B35/587
CPC分类号： C04B35/5935
摘要： A method for the production of a high-strength high-toughness silicon nitride sinter includes the steps of mixing a silicon nitride powder with a sintering additive, adding to the resultant mixture as seed particles 0.1 to 10% by volume, based on the amount of the mixture, of elongated single crystal .beta.-silicon nitride particles having a larger minor diameter than the average particle diameter of the silicon nitride powder and having an aspect ratio of at least 2, forming the resultant mixture so as to orient the elongated single crystal .beta.-silicon nitride particles as seed particles in a specific direction, and heating the green body to density it and simultaneously induce epitaxial growth of single crystal .beta.-silicon nitride particles, and a high-strength, high-toughness silicon nitride sinter obtained by the method.
摘要翻译：制造高强度高韧性氮化硅烧结体的方法包括以下步骤：将氮化硅粉末与烧结添加剂混合，将所得混合物作为0.1〜10体积％的种子颗粒，以该混合物具有比氮化硅粉末的平均粒径小的直径比至少为2的长径比的细长的单晶β-氮化硅颗粒，形成所得混合物以便使细长单晶β - 氮化硅颗粒作为特定方向的种子颗粒，并且加热生坯以使其密度并同时诱导单晶β-氮化硅颗粒的外延生长，以及通过该方法获得的高强度，高韧性氮化硅烧结体。

8. 发明授权

US07442661B2 Boron carbide based sintered compact and method for preparation thereof 有权
标题翻译：碳化硼基烧结体及其制备方法
公开(公告)号：US07442661B2
公开(公告)日：2008-10-28
申请号：US11618020
申请日：2006-12-29
申请人： Kiyoshi Hirao , Shuji Sakaguchi , Yukihiko Yamauchi , Shuzo Kanzaki , Suzuya Yamada
发明人： Kiyoshi Hirao , Shuji Sakaguchi , Yukihiko Yamauchi , Shuzo Kanzaki , Suzuya Yamada
IPC分类号： C04B35/563 , C04B35/58
CPC分类号： C04B35/645 , B82Y30/00 , C04B35/563 , C04B35/64 , C04B2235/3231 , C04B2235/3232 , C04B2235/3813 , C04B2235/3821 , C04B2235/422 , C04B2235/424 , C04B2235/528 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/604 , C04B2235/656 , C04B2235/6562 , C04B2235/658 , C04B2235/6581 , C04B2235/661 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/94 , C04B2235/96
摘要： A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 μm. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 μm, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 μm to boron carbide particles having a particle diameter of at most 5 μm, is from 0.02 to 0.6.
摘要翻译：具有至少400MPa的四点弯曲强度和至少2.8MPa.m 1/2的断裂韧性的碳化硼基烧结体，其具有以下两个优选实施方案。（1）一种碳化硼 - 二硼化钛烧结体，其通过将B 4 S粉末，TiO 2粉末和C粉末的混合粉末烧结而得到，同时使它们在加压条件为95〜70摩尔％的碳化硼和5〜30摩尔％的二硼化钛，其中，碳化硼的最大粒径为5μm以下。（2）在B 4 C中含有10〜25摩尔％的CrB 2 N 2的碳化硼 - 二硼化铬烧结体，其中，所述烧结体的相对密度为至少90％的烧结体中的碳化硼粒子的最大粒径为100μm以下，碳化硼粒子为10〜100μm的丰度比（面积比）与粒径为最多5颗，从0.02到0.6。

9. 发明申请

US20060247120A1 Boron carbide based sintered compact and method for preparation thereof 审中-公开
标题翻译：碳化硼基烧结体及其制备方法
公开(公告)号：US20060247120A1
公开(公告)日：2006-11-02
申请号：US11477433
申请日：2006-06-30
申请人： Kiyoshi Hirao , Shuji Sakaguchi , Yukihiko Yamauchi , Shuzo Kanzaki , Suzuya Yamada
发明人： Kiyoshi Hirao , Shuji Sakaguchi , Yukihiko Yamauchi , Shuzo Kanzaki , Suzuya Yamada
IPC分类号： C04B35/563
CPC分类号： C04B35/645 , B82Y30/00 , C04B35/563 , C04B35/64 , C04B2235/3231 , C04B2235/3232 , C04B2235/3813 , C04B2235/3821 , C04B2235/422 , C04B2235/424 , C04B2235/528 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/604 , C04B2235/656 , C04B2235/6562 , C04B2235/658 , C04B2235/6581 , C04B2235/661 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/94 , C04B2235/96
摘要： A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa·m1/2, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a B4C powder, a TiO2 powder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 μm. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrB2 in B4C, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 μm, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 μm to boron carbide particles having a particle diameter of at most 5 μm, is from 0.02 to 0.6.
摘要翻译：具有至少400MPa的四点弯曲强度和至少2.8MPa.m 1/2的断裂韧性的碳化硼基烧结体，其具有以下两个优选实施方案。（1）一种碳化硼 - 二硼化钛烧结体，其通过将B 4 S粉末，TiO 2粉末和C粉末的混合粉末烧结而得到，同时使它们在加压条件为95〜70摩尔％的碳化硼和5〜30摩尔％的二硼化钛，其中，碳化硼的最大粒径为5μm以下。（2）在B 4 C中含有10〜25摩尔％的CrB 2 N 2的碳化硼 - 二硼化铬烧结体，其中，所述烧结体的相对密度为至少90％的烧结体中的碳化硼粒子的最大粒径为100μm以下，碳化硼粒子为10〜100μm的丰度比（面积比）与粒径为最多5颗，从0.02到0.6。

10. 发明授权

US5902542A Method of producing silicon nitride ceramics having thermal high conductivity 失效
标题翻译：具有导热性高的氮化硅陶瓷的制造方法
公开(公告)号：US5902542A
公开(公告)日：1999-05-11
申请号：US766317
申请日：1996-12-13
申请人： Kiyoshi Hirao , Koji Watari , Motohiro Toriyama , Syuzo Kanzaki , Masaaki Obata
发明人： Kiyoshi Hirao , Koji Watari , Motohiro Toriyama , Syuzo Kanzaki , Masaaki Obata
IPC分类号： C04B35/584 , C04B35/593 , C04B35/638 , C04B35/64 , C04B35/645
CPC分类号： C04B35/5935
摘要： The present invention provides silicon nitride ceramics having high thermal conductivity and a method for production thereof. This invention relates to a method for producing a silicon nitride sintered body having a microstructure with silicon nitride crystals oriented uniaxially and exhibiting high thermal conductivity of 100 to 150 W/mK in the direction parallel to the orientation direction of the crystals, which comprises of preparing a slurry by mixing a mixed powder of a sintering auxiliary, beta-silicon nitride single crystals as seed crystals and a silicon nitride raw powder with a dispersing medium, forming the slurry by tape casting or extrusion forming, calcining the formed silicon nitride body with beta-silicon nitride single crystals oriented parallel to the casting plane to remove the organic components, densifying it by hot pressing and the like if required, and further annealing it at 1700 to 2000.degree. C. under the nitrogen pressure of 1 to 100 atmospheres.
摘要翻译：本发明提供了具有高导热性的氮化硅陶瓷及其制造方法。本发明涉及一种具有氮化硅结构的氮化硅烧结体的制造方法，该氮化硅烧结体具有在与晶体取向方向平行的方向上单轴取向并具有100〜150W / mK的高导热率的微结构，通过将烧结助剂，β-氮化硅单晶的混合粉末作为晶种和氮化硅原料粉末与分散介质混合来形成浆料，通过带状流延或挤出成型形成浆料，用β - 氮化硅单晶，其平行于铸造平面取向以去除有机组分，如果需要，通过热压等来致密化，并且在1〜100个大气压的氮气压力下，在1700〜2000℃进一步退火。

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