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1. 发明申请

US20180326553A1 CHEMICAL-MECHANICAL POLISHING ABRASIVE PAD CONDITIONER AND METHOD FOR MANUFACTURING SAME 审中-公开
公开(公告)号：US20180326553A1
公开(公告)日：2018-11-15
申请号：US15883656
申请日：2018-01-30
申请人： Kinik Company Ltd.
发明人： Jui-Lin Chou , Chin-Chung Chou , Chung-Yi Cheng , Hsin-Chun Wang , Yu-Chau Hung
IPC分类号： B24B53/017
摘要： The present invention provides a CMP abrasive pad conditioner, comprising a bottom substrate; an intermediate layer located on the bottom substrate, the intermediate layer including a hollow portion and an annular portion surrounding the hollow portion, the annular portion being provided with a plurality of bumps; and a diamond film located on the intermediate layer, and forming a plurality of abrasive projections corresponding to the bumps of the intermediate layer; in this case, a top surface of the abrasive projections is formed with a patterned configuration and the top surface is provided with a center line average roughness (Ra) between 2 and 20.

2. 发明授权

US09821431B2 Chemical mechanical polishing conditioner 有权
公开(公告)号：US09821431B2
公开(公告)日：2017-11-21
申请号：US15015670
申请日：2016-02-04
申请人： Kinik Company
发明人： Jui-Lin Chou , Chia-Feng Chiu , Wen-Jen Liao , Xue-Shen Su
IPC分类号： B24B53/00 , B24B53/017
CPC分类号： B24B53/017
摘要： Provided is a CMP conditioner comprising: a substrate, multiple abrasive bars, and multiple slide blocks. The substrate is divided into a central surface and an outer surface. The central surface is a recessed part. The outer surface encompasses the central surface. Multiple mounting holes are recessed from the outer surface. The abrasive bars are each respectively mounted in the mounting holes. Each of the multiple abrasive bars comprises a bar body and an abrasive particle. The abrasive particle is mounted on a top surface of the abrasive bar. The multiple slide blocks are distributed among the mounting holes of the outer surface. Each of the multiple slide blocks comprises a slide dressing surface. The present invention utilizes the slide blocks to reduce the contact between the substrate and a polishing mat efficiently. The slide blocks may decrease dissolving out of metal components within the substrate and the pollution induced.

3. 发明申请

US20160114465A1 Grinding Tool and Method of Manufacturing the Same 有权
标题翻译：研磨工具及其制造方法
公开(公告)号：US20160114465A1
公开(公告)日：2016-04-28
申请号：US14887347
申请日：2015-10-20
申请人： Kinik Company
发明人： Jui-Lin CHOU , I-Tsao LIAO , Chia-Feng CHIU
IPC分类号： B24D11/00 , B24D18/00
CPC分类号： B24D11/00 , B24D18/0072
摘要： A grinding tool includes a rigid support body and a carrier substrate. The carrier substrate is attached to the support body, and is supported by the support body. Two opposing surfaces of the carrier substrate respectively define a working surface and a non-working surface. A plurality of first abrasive particles are affixed on the working surface, and a plurality of second abrasive particles are affixed on the non-working surface. The first abrasive particles have a first average size, and the second abrasive particles have a second average size smaller than the first average size. The carrier substrate is attached to the support body at the non-working surface. Moreover, a method of manufacturing the grinding tool is described herein.
摘要翻译：研磨工具包括刚性支撑体和载体基底。载体基板安装在支撑体上，由支撑体支撑。载体基板的两个相对表面分别限定工作表面和非工作表面。多个第一磨料颗粒固定在工作表面上，多个第二磨料颗粒固定在非工作表面上。第一磨料颗粒具有第一平均尺寸，并且第二磨料颗粒具有小于第一平均尺寸的第二平均尺寸。载体衬底在非工作表面处附接到支撑体。此外，这里描述了制造研磨工具的方法。

4. 发明申请

US20160074995A1 CHEMICAL MECHANICAL POLISHING CONDITIONER WITH BRUSHES 审中-公开
标题翻译：化学机械抛光调理器与刷子
公开(公告)号：US20160074995A1
公开(公告)日：2016-03-17
申请号：US14834030
申请日：2015-08-24
申请人： KINIK COMPANY
发明人： Jui-Lin CHOU , Chia-Chun WANG , Chia-Feng CHIU , Wen-Jen LIAO
IPC分类号： B24B53/017
CPC分类号： B24B53/017
摘要： Provided is a CMP conditioner with brushes comprising: a substrate comprising a surface, multiple concave parts formed in the surface; multiple abrasive assemblies, each abrasive assembly comprising a metal bar and an abrasive particle, the metal bar comprising a connecting end and a dressing end, the abrasive particle mounted in the dressing end of the metal bar and protruding a tip, wherein vertical distances between the tips and a level of the surface are equal; and multiple brushes mounted in the surface, wherein ends of the brushes are higher than the tips, vertical distances between the ends of the brushes and a level of the tips ranging from 0.1 mm to 1 mm. The present invention, with precise control of the vertical distance between the tips and the level of the surface, and of the vertical distance between the ends of the brushes and a level of the tips improves the cleaning ability of the CMP conditioner with brushes for the scraps in holes of the surface of a pad and avoid problems, e.g., scraps in some holes cannot be effectively removed.
摘要翻译：本发明提供一种具有刷子的CMP调节器，其包括：基板，其包括表面，形成在所述表面中的多个凹部; 多个研磨组件，每个研磨组合件包括金属棒和磨料颗粒，金属棒包括连接端和修整端，磨料颗粒安装在金属棒的修整端中并突出一个尖端，其中垂直距离尖端和表面水平相等; 以及安装在表面中的多个电刷，其中电刷的端部比尖端高，电刷的端部之间的垂直距离和尖端的水平范围为0.1mm至1mm。本发明通过精确控制尖端和表面水平之间的垂直距离以及刷子的端部与尖端之间的垂直距离提高了CMP调节器对于刷子的清洁能力，在垫的表面的孔中残留并避免问题，例如，一些孔中的废料不能被有效地去除。

5. 发明授权

US09180572B2 Chemical mechanical polishing conditioner and manufacturing methods thereof 有权
标题翻译：化学机械抛光调理剂及其制造方法
公开(公告)号：US09180572B2
公开(公告)日：2015-11-10
申请号：US14063230
申请日：2013-10-25
申请人： Kinik Company
发明人： Chia-Chun Wang , Kai-Hsiang Chang , Chung-Yi Cheng , Wen-Jen Liao
IPC分类号： B24B53/017 , B24D18/00
CPC分类号： B24B53/017 , B24D18/0009
摘要： The present invention relates to a method for manufacturing a chemical mechanical polishing conditioner, comprising: (A) providing a non-planar substrate; (B) providing a binding layer disposed on the surface of the non-planar substrate; (C) providing a plurality of abrasive particles embedded in a surface of the binding layer, and (D) heat curing the binding layer, such that the non-planar substrate is deformed into a planar substrate during curing the binding layer, and the abrasive particles are fixed to a surface of the planar substrate by the binding layer; wherein, after step (D), tips of the abrasive particles have a leveled height. Therefore, the present can effectively improve the problem of thermal deformation of the substrate of the chemical mechanical polishing conditioner during a heat curing process, and enhance surface flatness of the chemical mechanical polishing conditioner.
摘要翻译：本发明涉及一种化学机械抛光调理剂的制造方法，包括：（A）提供非平面基材; （B）提供设置在所述非平面基板的表面上的粘结层; （C）提供嵌入在所述粘合层的表面中的多个磨料颗粒，和（D）热固化所述粘合层，使得所述非平面基材在固化所述粘结层期间变形为平面基材，颗粒通过粘合层固定在平面基底的表面上; 其中，在步骤（D）之后，磨料颗粒的尖端具有调平的高度。因此，本发明可以有效地改善热固化过程中化学机械抛光调理剂的基材的热变形问题，并且增强化学机械抛光调理剂的表面平整度。

6. 发明申请

US20150165588A1 CHEMICAL MECHANICAL POLISHING CONDITIONER WITH HIGH QUALITY ABRASIVE PARTICLES 审中-公开
标题翻译：具有高品质磨粒的化学机械抛光调理剂
公开(公告)号：US20150165588A1
公开(公告)日：2015-06-18
申请号：US14535866
申请日：2014-11-07
申请人： Kinik Company
发明人： Jui-Lin CHOU
IPC分类号： B24B53/017
CPC分类号： B24B53/017
摘要： The present invention relates to a chemical mechanical polishing conditioner with high quality abrasive particles, comprising a substrate; a binding layer disposed on the substrate; and a plurality of abrasive particles placed on the binding layer, and the abrasive particles are placed on the substrate by the binding layer; wherein the chemical mechanical polishing conditioner with high quality abrasive particles is moved to pass through a water jet and a high pressure fluid by a conveying device, and the high pressure fluid is applied on the abrasive particles through the water jet to remove one or more than one risk diamond included in the abrasive particles. Therefore, the present invention can improve a problem of conventional risk diamond residue on the conditioner, thereby enhancing the polishing performance and service time of the conditioner.
摘要翻译：本发明涉及具有高质量磨料颗粒的化学机械抛光调理剂，其包含基材; 设置在所述基板上的粘结层; 以及多个研磨颗粒放置在粘合层上，并且磨料颗粒通过粘合层放置在基底上; 其中具有高质量磨料颗粒的化学机械抛光调理剂通过输送装置移动以通过水射流和高压流体，并且通过水射流将高压流体施加到研磨颗粒上以除去一个或多个研磨颗粒中含有一种危险金刚石。因此，本发明可以改善调理剂上的常规危险金刚石残留的问题，从而提高调理剂的抛光性能和使用时间。

7. 发明申请

US20140273772A1 CHEMICAL MECHANICAL POLISHING CONDITIONER AND MANUFACTURING METHODS THEREOF 有权
标题翻译：化学机械抛光调理器及其制造方法
公开(公告)号：US20140273772A1
公开(公告)日：2014-09-18
申请号：US14198162
申请日：2014-03-05
申请人： Kinik Company
发明人： Jui-Lin CHOU , Chia Chun WANG , Chia-Feng CHIU , Chung-Yi CHENG
IPC分类号： B24B53/017 , B24D18/00 , B24B53/12
CPC分类号： B24B53/017 , B24B53/12 , B24D7/18
摘要： The present invention relates to a chemical mechanical polishing conditioner and manufacturing methods thereof. The chemical mechanical polishing conditioner comprises: a planar substrate having a leveling surface; a bonding layer disposed on the surface of the planar substrate; and a plurality of abrasive particles embedded in the surface of the bonding layer and fixed to the surface of the planar substrate by the binding layer; wherein the planar substrate is formed by a deformation compensation for the non-planar substrate during curing the binding layer, and thus the tips of the abrasive particles have a leveled height. Therefore, the present invention can effectively improve the problem of thermal deformation of the substrate of the chemical mechanical polishing conditioner during heating and curing process, and thereby enhancing the surface flatness of chemical mechanical polishing conditioner.
摘要翻译：化学机械抛光调理剂及其制造方法技术领域本发明涉及化学机械抛光调理剂及其制造方法。所述化学机械抛光调理剂包括：具有平整表面的平面基板; 设置在所述平面基板的表面上的接合层; 以及嵌入在所述接合层的表面中的多个磨料颗粒，并通过所述粘合层固定在所述平面基板的表面上; 其中所述平面基板通过在固化所述粘合层期间对所述非平面基板进行变形补偿而形成，并且因此所述磨料颗粒的末端具有调平高度。因此，本发明可以有效地改善加热和固化过程中化学机械抛光调理剂的基材的热变形问题，从而提高化学机械抛光调理剂的表面平整度。

8. 发明申请

US20030109204A1 Fixed abrasive CMP pad dresser and associated methods 审中-公开
标题翻译：固定磨料CMP抛光垫修整器及相关方法
公开(公告)号：US20030109204A1
公开(公告)日：2003-06-12
申请号：US10010961
申请日：2001-12-06
申请人： KINIK COMPANY
发明人： Chien-Min Sung
IPC分类号： B24B053/00
CPC分类号： B24B53/12
摘要： CMP pad dressers suitable for conditioning fixed abrasive CMP pads, as well as methods for the making and use thereof are disclosed and described. The CMP dressers are able to condition a fixed abrasive CMP pad without dislodging or substantially damaging any of the poles contained on the pad's polishing surface. In one aspect, the CMP pad dresser may include a substrate member having a working surface with a plurality of small projections. The projections may have a height less than that of the poles on the CMP pad, and in one aspect may have a height of less than 30 micrometers, and be spaced apart by a distance of less than about 150 micrometers. In another aspect, a carbonaceous layer may be formed on the working surface of the CMP pad dresser.
摘要翻译：适用于调理固定磨料CMP垫的CMP垫修整器以及其制造和使用的方法被公开和描述。 CMP修整器能够调节固定的磨料CMP垫，而不会移动或基本上损坏垫的抛光表面上所包含的任何极。在一个方面，CMP抛光垫修整器可以包括具有多个小突起的工作表面的基底构件。突起可以具有比CMP垫上的极的高度的高度，并且在一个方面可以具有小于30微米的高度，并且间隔开小于约150微米的距离。另一方面，可以在CMP抛光垫修整器的工作表面上形成含碳层。

9. 发明申请

US20220241929A1 CHEMICAL MECHANICAL POLISHING PAD CONDITIONER AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20220241929A1
公开(公告)日：2022-08-04
申请号：US17546664
申请日：2021-12-09
申请人： Kinik Company Ltd.
发明人： Jui-Lin CHOU , Min-Hung WU , Chin-Chung CHOU , Yu-Chau HUNG
IPC分类号： B24B53/017
摘要： A chemical mechanical polishing pad conditioner includes a bottom substrate, an intermediate substrate and a diamond film. The intermediate substrate is arranged on the bottom substrate; the intermediate substrate includes a hollow portion and an annular portion surrounding the hollow portion; the annular portion includes a plurality of first polishing areas arranged at intervals along an annular area and a plurality of second polishing areas arranged among the first polishing areas; and the first polishing areas extend along a radial direction on the intermediate substrate. The diamond film is arranged on the intermediate substrate, and the diamond film overlays the first polishing areas and the second polishing areas. The diamond film is provided with a plurality of first surfaces and a plurality of second surfaces, and first polishing tips protruding from the first surfaces and second polishing tips protruding from the second surface are formed on the diamond film.

10. 发明授权

US10173297B2 Chemical mechanical polishing conditioner and method for manufacturing same 有权
公开(公告)号：US10173297B2
公开(公告)日：2019-01-08
申请号：US15584687
申请日：2017-05-02
申请人： Kinik Company Ltd.
发明人： Jui-Lin Chou , Ting-Sheng Huang , Hsin-Chun Wang , Xue-Shen Su
IPC分类号： B24B53/017 , B24B53/00 , B24D18/00 , C08K3/22 , C08K3/02 , C30B29/36
摘要： A chemical mechanical polishing (abbreviated as CMP) conditioner comprises a bottom substrate, an intermediate substrate and a diamond film The intermediate substrate is provided on the bottom substrate. The intermediate substrate comprises a hollow portion, an annular portion surrounding the hollow portion, and at least one projecting ring projecting out of the annular portion away from the bottom substrate. The projecting ring comprises a plurality of bumps arranged to be spaced apart from each other along an annulus region. The bumps are extended in a radial direction of the intermediate substrate. The diamond film is provided on the intermediate substrate. The diamond film is allowed for conforming to the bumps, so as to form a plurality of the abrasive projections.

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