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    • 1. 发明申请
    • NONVOLATILE MEMORY DEVICE AND DATA WRITE METHOD
    • 非易失性存储器件和数据写入方法
    • US20140281824A1
    • 2014-09-18
    • US14179614
    • 2014-02-13
    • EUN CHU OHJUNJIN KONGYOUNGGEON YOOKIJUN LEE
    • EUN CHU OHJUNJIN KONGYOUNGGEON YOOKIJUN LEE
    • G06F11/16G11C11/16
    • G11C11/1675G11C7/1006G11C11/2275G11C13/0004G11C13/0007G11C13/0069G11C2013/0076G11C2029/0411
    • A data write method of a nonvolatile memory device is provided which includes receiving write data to be stored in selected memory cells; reading data stored in the selected memory cells; processing the write data according to a plurality of data modulation manners to generate a plurality of modulated data values; calculating the number of flip bits and the number of switching bits when the write data and the plurality of modulated data values are overwritten on the selected memory cells, each flip bit indicating that a logical value of a selected memory cell is reversed and each switching bit indicating that a logical value of a selected memory cell is switched from a first logical value to a second logical value; and selecting one of the write data and the plurality of modulated data values according to calculating the number of flip bits and the number of switching bits.
    • 提供了一种非易失性存储器件的数据写入方法,包括接收要存储在所选存储器单元中的写数据; 读取存储在所选存储单元中的数据; 根据多个数据调制方式处理写入数据以产生多个调制数据值; 当选择的存储单元写入写入数据和多个调制数据值时,计算翻转位数和切换位数,每个翻转位指示所选存储单元的逻辑值相反,并且每个开关位 指示所选存储单元的逻辑值从第一逻辑值切换到第二逻辑值; 以及根据计算翻转位数和切换位数来选择写入数据和多个调制数据值之一。