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    • 2. 发明授权
    • Apparatus and method for moving WCDMA mobile station in the manner of the least packet loss
    • 以最小分组丢失的方式移动WCDMA移动台的装置和方法
    • US08929895B2
    • 2015-01-06
    • US13262258
    • 2009-09-29
    • Kevin ZhangPeter Ramle
    • Kevin ZhangPeter Ramle
    • H04W36/00H04W36/30H04W36/02
    • H04W36/0033H04W36/02H04W36/30
    • A method for moving MS in the manner of the least packet loss can be divided into two steps. In the first step, when the MS is still connected to the source CN node and is running the effective loads, the MS prepares the routing information pointing at the target CN node. In the second step, the connection between the source CN node and the RAN node is released, the MS ID, the context data and the mobile information are transmitted to the target CN node. Then, a new connection between the target CN node and the RAN node is established. The step is completed synchronously and rapidly to minimize the packet loss. When establishing a new connection, the routing information transmitted to the MS before is used so that a new CN node is pointed at.
    • 以最小分组丢失的方式移动MS的方法可以分为两个步骤。 在第一步,当MS仍然连接到源CN节点并且正在运行有效负载时,MS准备指向目标CN节点的路由信息​​。 在第二步骤中,释放源CN节点和RAN节点之间的连接,将MS ID,上下文数据和移动信息发送到目标CN节点。 然后,建立目标CN节点和RAN节点之间的新连接。 该步骤同步快速完成,以最小化丢包。 当建立新连接时,使用之前发送到MS的路由信息​​,以便指向新的CN节点。
    • 9. 发明申请
    • Dynamic multi-Vcc scheme for SRAM cell stability control
    • 用于SRAM单元稳定性控制的动态多Vcc方案
    • US20060067134A1
    • 2006-03-30
    • US10950740
    • 2004-09-27
    • Kevin ZhangFatih HamzaogluLin Ma
    • Kevin ZhangFatih HamzaogluLin Ma
    • G11C7/10
    • G11C5/14G11C11/413
    • A dynamic multi-voltage memory array features SRAM cells that are subjected to different biasing conditions, depending on the operating mode of the cells. The selected SRAM cell receives a first voltage when a read operation is performed, and receives a second voltage when a write operation is performed. By biasing the cell differently for the two distinct operations, a total decoupling of the read and write operations is achieved. The disclosed memory array, as well as future SRAM designs incorporating the multi-voltage capability thus avoid the conflicting requirements of read and write operations. Random single-bit failures of the memory array are reduced, due to the improvement in read stability and write margin.
    • 动态多电压存储器阵列具有不同偏置条件的SRAM单元,具体取决于单元的工作模式。 所选择的SRAM单元在执行读取操作时接收第一电压,并且当执行写入操作时接收第二电压。 通过针对两个不同的操作偏置单元格,可以实现读取和写入操作的完全解耦。 所公开的存储器阵列以及结合多电压能力的未来SRAM设计因此避免了读写操作的冲突要求。 由于读取稳定性和写入裕度的提高,存储器阵列的随机单位故障降低。