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    • 3. 发明授权
    • Hourglass ram
    • 沙漏公羊
    • US06914289B2
    • 2005-07-05
    • US10222095
    • 2002-08-15
    • Kevin W. Bross
    • Kevin W. Bross
    • H01L29/423H01L29/788
    • H01L29/7881H01L29/42324
    • An integrated circuit having a non-volatile HGRAM cell includes a first section having impurity materials implanted into a substrate to form NPN transistor regions and a second section having a gate structure to control the currents conducted in the NPN transistor regions. The gate structure is formed at least above the P-type channel region of the substrate and includes an hourglass shaped material with gates to control the movement of holes through the restricted portion of the hourglass.
    • 具有非易失性HGRAM单元的集成电路包括具有注入到衬底中以形成NPN晶体管区域的杂质材料的第一部分和具有用于控制在NPN晶体管区域中传导的电流的栅极结构的第二部分。 栅极结构至少形成在基板的P型沟道区域的上方,并且包括具有门的沙漏形材料,以控制孔穿过沙漏的限制部分的运动。