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    • 3. 发明授权
    • Anti-atherosclerotic diaryl compounds
    • 抗动脉粥样硬化二芳基化合物
    • US5395853A
    • 1995-03-07
    • US157685
    • 1993-11-24
    • William P. JacksonClifford J. HarrisRichard J. ArrowsmithJohn G. DannKevin J. O'ConnorRobert F. G. Booth
    • William P. JacksonClifford J. HarrisRichard J. ArrowsmithJohn G. DannKevin J. O'ConnorRobert F. G. Booth
    • C07C233/07C07C233/11C07C271/44C07C275/24C07C275/28C07C275/30C07C279/28C07C327/44A61K31/155A61K31/17C07C279/18
    • C07C233/07C07C233/11C07C271/44C07C275/24C07C275/28C07C275/30C07C279/28C07C327/44C07C2101/14
    • The present invention is concerned with compounds of formula (I) ##STR1## wherein m is 0 or 1;W is hydrogen, a C.sub.1-16 straight, branched, or cyclic alkyl group, or a C.sub.2-16 straight, branched, or cyclic alkenyl or alkynyl group, orPh(CH.sub.2).sub.n -- where Ph is phenyl and n is an integer of from 0 to 2, the phenyl group being optionally substituted by one or more atoms or groups independently selected from halogen, hydroxy, nitro, C.sub.1-4 alkoxy and C.sub.1-4 alkyl wherein one or more of the hydrogen atoms in said alkyl group is optionally replaced by halogen, orR.sup.1 NHCO-- where R.sup.1 is hydrogen or a C.sub.1-6 alkyl group, orR.sup.2 CONH-- where R.sup.2 is hydrogen or a C.sub.1-6 alkyl group; ##STR2## Y is --(CH.sub.2).sub.q, where q is an integer of from 1 to 3, or --CH.dbd.CH-- (E or Z);Z is a C.sub.1-6 alkyl group optionally substituted by one or more independently selected polar groups; andring A is optionally substituted by one or more atoms or groups independently selected from halogen, hydroxy, nitro, C.sub.1-4 alkoxy and C.sub.1-4 alkyl wherein one or more of the hydrogen atoms in said alkyl group is optionally replaced by halogen;provided said compound of formula (I) is not N-{2-[(4-methyl-phenyl)methyl]phenyl}acetamide or .alpha.-(p-tolyl)-o-cresol carbanilate; and salts, solvates and physiologically functional derivatives thereof, processes for the preparation of these compounds, pharmaceutical formulations containing them and their use in medicine.
    • 本发明涉及式(I)的化合物:其中m为0或1; W是氢,C1-16直链,支链或环状烷基或C2-16直链,支链或环状烯基或炔基或Ph(CH2)n-,其中Ph是苯基,n是整数 0至2,苯基任选被一个或多个独立地选自卤素,羟基,硝基,C 1-4烷氧基和C 1-4烷基的一个或多个原子或基团取代,其中所述烷基中的一个或多个氢原子是任选的 被卤素取代,或R1NHCO-,其中R1是氢或C1-6烷基,或R2CONH-,其中R2是氢或C1-6烷基; Y是 - (CH 2)q,其中q是1至3的整数,或-CH = CH-(E或Z); Z是任选被一个或多个独立选择的极性基团取代的C 1-6烷基; 并且环A任选被一个或多个独立地选自卤素,羟基,硝基,C 1-4烷氧基和C 1-4烷基的原子或基团取代,其中所述烷基中的一个或多个氢原子任选被卤素取代; 所述式(I)化合物不是N- {2 - [(4-甲基 - 苯基)甲基]苯基}乙酰胺或α-(对甲苯基) - 邻甲酚氨基苯甲酸酯; 及其盐,溶剂合物及其生理功能衍生物,制备这些化合物的方法,含有它们的药物制剂及其在药物中的用途。
    • 4. 发明授权
    • Dual port complementary memory
    • 双口互补存储器
    • US4660177A
    • 1987-04-21
    • US691418
    • 1985-01-14
    • Kevin J. O'Connor
    • Kevin J. O'Connor
    • G11C11/34G11C8/16G11C11/41G11C11/412G11C13/00
    • G11C11/412G11C8/16
    • A dual port memory is implemented in complementary (e.g., CMOS) technology so as to allow simultaneous uncontested read operations to the same memory cell. This is achieved by accessing one node of a bistable static cell through a n-channel and a p-channel access transistor. The opposite node is typically left unconnected to external access means. This technique also reduces the area required to implement the memory cell as compared to prior art NMOS techniques. If desired, an arbitration circuit can be included to arbitrate between simultaneous read/read or read/write operations on the same cell from the two ports.
    • 双端口存储器以互补(例如CMOS)技术实现,以便允许对同一存储器单元的同时无竞争的读取操作。 这通过通过n沟道和p沟道存取晶体管访问双稳态静态单元的一个节点来实现。 相对的节点通常与外部访问装置不连接。 与现有技术的NMOS技术相比,该技术还减少了实现存储器单元所需的面积。 如果需要,可以包括仲裁电路以在来自两个端口的同一小区上的同时读/读或读/写操作之间进行仲裁。
    • 10. 发明授权
    • Semiconductor-integrated-circuit SRAM-cell array with single-ended
current-sensing
    • 具有单端电流检测的半导体集成电路SRAM单元阵列
    • US5541874A
    • 1996-07-30
    • US522796
    • 1995-09-01
    • Kevin J. O'Connor
    • Kevin J. O'Connor
    • H01L27/10G11C8/16H01L21/8244H01L27/11G11C11/40
    • G11C8/16
    • Each memory cell in an SRAM array contains an auxiliary reading transistor connected across one of the transistors in each cell. A row read line controls the ON-OFF condition of this auxiliary reading transistor. In addition, each cell has two access transistors for connecting the cell to complementary column bit lines The ON-OFF condition of both of these access transistors is controlled by a row write line. Each cell has two power nodes, one connected to a power source such as VDD and the other connected to a column detector line that terminates in a current sensor. The state of the memory cell is sensed by this current sensor. In one embodiment, the power line that brings the voltage VDD to the cells is a column line; in another embodiment, it is a row line. Thus there are a total of four column lines and two row lines in the one embodiment, and a total of three column lines and three row lines in the other embodiment.
    • SRAM阵列中的每个存储单元包含连接在每个单元中的一个晶体管的辅助读取晶体管。 行读取行控制辅助读取晶体管的ON-OFF状态。 此外,每个单元具有用于将单元连接到互补列位线的两个存取晶体管。这两个存取晶体管的导通截止状态由行写入线控制。 每个单元具有两个功率节点,一个连接到诸如VDD的电源,另一个连接到端接在电流传感器中的列检测器线。 存储单元的状态由该电流传感器感测。 在一个实施例中,将电压VDD提供给电池的电力线是列线; 在另一个实施例中,它是行线。 因此,在一个实施例中总共有四条列线和两条行线,另一个实施例中共有三条列线和三条行线。