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1. 发明授权

US06836106B1 Apparatus and method for testing semiconductors 失效
标题翻译：用于半导体测试的装置和方法
公开(公告)号：US06836106B1
公开(公告)日：2004-12-28
申请号：US10668561
申请日：2003-09-23
申请人： Kevin H. Brelsford , Ronald G. Filippi, Jr. , Kenneth P. Rodbell , Ping-Chuan Wang
发明人： Kevin H. Brelsford , Ronald G. Filippi, Jr. , Kenneth P. Rodbell , Ping-Chuan Wang
IPC分类号： G01R3126
CPC分类号： G11C29/56 , G01R31/2858 , G11C29/1201 , G11C2029/5602
摘要： A test circuit for testing semiconductors includes a plurality of at least first conductors and second conductors. The first and second conductors are operatively connected together by a plurality of conductive vias to form an open chain of alternating first and second conductors. A plurality of conductive taps are included, each of the taps being connected at a first end to a corresponding first conductor. The test circuit further includes a plurality of switching circuits, each of the switching circuits being operatively connected to a second end of a corresponding one of the conductive taps. Each of the switching circuits is configurable for selectively connecting the corresponding conductive tap to one of at least a first bus and a second bus in response to at least one control signal presented to the switching circuit, the first and second buses being connected to first and second bond pads, respectively.
摘要翻译：用于测试半导体的测试电路包括多个至少第一导体和第二导体。第一和第二导体通过多个导电通孔可操作地连接在一起以形成交替的第一和第二导体的开链。包括多个导电抽头，每个抽头在第一端连接到对应的第一导体。测试电路还包括多个开关电路，每个开关电路可操作地连接到对应的一个导电抽头的第二端。响应于呈现给开关电路的至少一个控制信号，每个开关电路可配置为有选择地将对应的导电抽头连接到至少第一总线和第二总线中的一个，第一和第二总线连接到第一和第二总线第二接合垫。

2. 发明授权

US06803662B2 Low dielectric constant material reinforcement for improved electromigration reliability 失效
标题翻译：低介电常数材料增强，提高电迁移可靠性
公开(公告)号：US06803662B2
公开(公告)日：2004-10-12
申请号：US10026117
申请日：2001-12-21
申请人： Ping-Chuan Wang , Kevin H. Brelsford , Ronald Filippi
发明人： Ping-Chuan Wang , Kevin H. Brelsford , Ronald Filippi
IPC分类号： H01L2348
CPC分类号： H01L23/522 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要： A reinforced semiconductor interconnect structure, having the following components: (1) A first metal interconnect disposed in a first material, the first metal interconnect having a line portion and at least one via portion, an anode section and a cathode section, the via portion of the first metal interconnect located in the anode section, the line portion of the first metal interconnect having a top, bottom and terminus side, wherein at least a part of the bottom side of the line portion of the first metal interconnect in contact with the first dielectric; and (2) a first reinforcement disposed in the first material, the first reinforcement in contact with at least the bottom side of the first metal interconnect, the first reinforcement comprising a second material, the second material being electrically nonconductive; and wherein the second material has a greater mechanical rigidity than the first material.
摘要翻译：一种增强的半导体互连结构，具有以下部件：（1）设置在第一材料中的第一金属互连件，所述第一金属互连件具有线部分和至少一个通孔部分，阳极部分和阴极部分，所述通孔部分位于阳极部分中的第一金属互连件，第一金属互连线的线部分具有顶部，底部和末端侧，其中第一金属互连线路部分的底侧的至少一部分与第一电介质; 和（2）设置在所述第一材料中的第一加强件，所述第一加强件至少与所述第一金属互连件的底侧相接触，所述第一加强件包括第二材料，所述第二材料是不导电的; 并且其中所述第二材料具有比所述第一材料更大的机械刚度。

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