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1. 发明授权

US08106464B2 Semiconductor device having bar type active pattern 有权
标题翻译：具有棒式有源图案的半导体器件
公开(公告)号：US08106464B2
公开(公告)日：2012-01-31
申请号：US12461500
申请日：2009-08-13
申请人： Keun-hwl Cho , Dong-won Kim , Jun Seo , Min-sang Kim , Sung-min Kim , Hyun-jun Bae , Ji-Myoung Lee
发明人： Keun-hwl Cho , Dong-won Kim , Jun Seo , Min-sang Kim , Sung-min Kim , Hyun-jun Bae , Ji-Myoung Lee
IPC分类号： H01L27/088
CPC分类号： H01L29/66795 , H01L27/10814 , H01L27/10873 , H01L27/10879 , H01L29/785
摘要： A semiconductor device having a bar type active pattern and a method of manufacturing the same are provided. The semiconductor device may include a semiconductor substrate having a semiconductor fin configured to protrude from a surface of the semiconductor substrate in a first direction, the semiconductor substrate having a first width and a second width crossing the first width, wherein the first width and the second width extend in a second direction. A plurality of active patterns may be arranged in the first direction with a separation gap from the semiconductor fin. A plurality of support patterns may be arranged between the semiconductor fin and one of the plurality of active patterns arranged closer to the semiconductor fin in the first direction, and between the plurality of active patterns arranged in the first direction to support the plurality of active patterns. A gate may be arranged to cross the plurality of active patterns in the second direction and to cover a portion of the at least one of the plurality of active patterns.
摘要翻译：提供了具有条形有源图案的半导体器件及其制造方法。半导体器件可以包括具有半导体鳍片的半导体衬底，半导体鳍片被配置为在第一方向上从半导体衬底的表面突出，半导体衬底具有与第一宽度交叉的第一宽度和第二宽度，其中第一宽度和第二宽度宽度在第二方向上延伸。多个有源图案可以在第一方向上与半导体鳍片分离间隙布置。多个支撑图案可以布置在半导体翅片与沿着第一方向布置得更靠近半导体鳍片的多个有源图案中的一个之间以及沿着第一方向布置的多个有源图案之间，以支撑多个有源图案。栅极可以布置成在第二方向上跨越多个有源图案并且覆盖多个有源图案中的至少一个的一部分。

2. 发明申请

US20100059807A1 Semiconductor device having bar type active pattern 有权
标题翻译：具有棒式有源图案的半导体器件
公开(公告)号：US20100059807A1
公开(公告)日：2010-03-11
申请号：US12461500
申请日：2009-08-13
申请人： Keun-hwl Cho , Dong-won Kim , Jun Seo , Min-sang Kim , Sung-min Kim , Hyun-jun Bae , Ji-Myoung Lee
发明人： Keun-hwl Cho , Dong-won Kim , Jun Seo , Min-sang Kim , Sung-min Kim , Hyun-jun Bae , Ji-Myoung Lee
IPC分类号： H01L27/108
CPC分类号： H01L29/66795 , H01L27/10814 , H01L27/10873 , H01L27/10879 , H01L29/785
摘要： A semiconductor device having a bar type active pattern and a method of manufacturing the same are provided. The semiconductor device may include a semiconductor substrate having a semiconductor fin configured to protrude from a surface of the semiconductor substrate in a first direction, the semiconductor substrate having a first width and a second width crossing the first width, wherein the first width and the second width extend in a second direction. A plurality of active patterns may be arranged in the first direction with a separation gap from the semiconductor fin. A plurality of support patterns may be arranged between the semiconductor fin and one of the plurality of active patterns arranged closer to the semiconductor fin in the first direction, and between the plurality of active patterns arranged in the first direction to support the plurality of active patterns. A gate may be arranged to cross the plurality of active patterns in the second direction and to cover a portion of the at least one of the plurality of active patterns.
摘要翻译：提供了具有条形有源图案的半导体器件及其制造方法。半导体器件可以包括具有半导体鳍片的半导体衬底，半导体鳍片被配置为在第一方向上从半导体衬底的表面突出，半导体衬底具有与第一宽度交叉的第一宽度和第二宽度，其中第一宽度和第二宽度宽度在第二方向上延伸。多个有源图案可以在第一方向上与半导体鳍片分离间隙布置。多个支撑图案可以布置在半导体翅片与沿着第一方向布置得更靠近半导体鳍片的多个有源图案中的一个之间以及沿着第一方向布置的多个有源图案之间，以支撑多个有源图案。栅极可以布置成在第二方向上跨越多个有源图案并且覆盖多个有源图案中的至少一个的一部分。

3. 发明申请

US20090115009A1 Multibit electro-mechanical memory device and manufacturing method thereof 有权
标题翻译：多位机电记忆体装置及其制造方法
公开(公告)号：US20090115009A1
公开(公告)日：2009-05-07
申请号：US12289851
申请日：2008-11-06
申请人： Ji-Myoung Lee , Min-Sang Kim , Sung-Min Kim , Keun-Hwl Cho
发明人： Ji-Myoung Lee , Min-Sang Kim , Sung-Min Kim , Keun-Hwl Cho
IPC分类号： H01L29/66 , H01L21/00
CPC分类号： G11C11/56 , B82Y10/00 , G11C13/025 , G11C23/00
摘要： Provided are a multibit electro-mechanical memory device and a method of manufacturing the same. The device may include at least one bit line in a first direction on a substrate; at least one gate line and at least one lower word line in parallel by a given interval and in a second direction intersecting the first direction on the at least one bit line; at least one contact pad adjacent to the at least one gate line on the at least one bit line; and at least one cantilever electrode coupled to the at least one contact pad, configured to float with a void above and beneath the at least one cantilever electrode and configured to curve in a third direction vertical to the first and second directions.
摘要翻译：提供了一种多位机电存储器件及其制造方法。器件可以在衬底上包括沿第一方向的至少一个位线; 至少一个栅极线和至少一个下部字线平行延伸给定的间隔，并且在与所述至少一个位线上的所述第一方向相交的第二方向上; 至少一个与所述至少一条位线上的所述至少一条栅极线相邻的接触焊盘; 以及耦合到所述至少一个接触垫的至少一个悬臂电极，其构造成在所述至少一个悬臂电极的上方和下方浮动，并且被配置为在垂直于所述第一和第二方向的第三方向上弯曲。

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