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1. 发明申请

US20070155114A1 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20070155114A1
公开(公告)日：2007-07-05
申请号：US11482135
申请日：2006-07-05
申请人： Keun Ban , Cheol Kyu Bok
发明人： Keun Ban , Cheol Kyu Bok
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L27/10852 , H01L27/10894
摘要： A method for manufacturing a semiconductor device includes forming a sacrificial layer for forming a lower electrode as an amorphous carbon layer in order to prevent collapsing of a cylindrical lower electrode. When an alignment process is not normally performed to arrange photoresist mask pattern for storage electrode and lower electrode contact plug due to optical absorbance of the amorphous carbon layer, a polysilicon layer is further formed over a SiON film used as a hard mask of the amorphous carbon layer, thereby reducing risk of misalignment and performing a stable process for forming a capacitor to increase yield of semiconductor devices.
摘要翻译：一种制造半导体器件的方法包括形成用于形成下电极的牺牲层作为无定形碳层，以防止圆柱形下电极的折叠。当由于无定形碳层的光吸收而不能正常地进行取向处理来设置用于存储电极和下电极接触塞的光致抗蚀剂掩模图案时，在用作无定形碳的硬掩模的SiON膜上进一步形成多晶硅层从而降低未对准的风险，并且执行用于形成电容器的稳定工艺以提高半导体器件的产量。

2. 发明申请

US20050185183A1 Method for aligning wafer 失效
标题翻译：对准晶圆的方法
公开(公告)号：US20050185183A1
公开(公告)日：2005-08-25
申请号：US10998816
申请日：2004-11-30
申请人： Keun Ban
发明人： Keun Ban
IPC分类号： H01L21/027 , G03F7/20 , G03F9/00 , H01L21/68 , G01B11/00
CPC分类号： G03F9/7019 , G03F7/70633 , G03F9/7011 , G03F9/7015 , H01L21/682
摘要： A method for aligning wafer is provided, the method including loading and aligning a first wafer in an exposure apparatus, selecting a non-defective wafer alignment mark among a plurality of wafer alignment marks of the first wafer and storing the non-defective wafer alignment marks as a gray level reference image in a job file, loading a second wafer and storing a plurality of wafer alignment marks of the second wafer as gray level wafer alignment mark images, respectively comparing each of the plurality of wafer alignment mark images of the second wafer with the reference image of the first wafer pixel by pixel to obtain matching value for each of the plurality of the wafer alignment mark images, comparing each of the plurality of the matching values with a minimum value set in the exposure apparatus, replacing the wafer alignment mark image having the matching value smaller than the minimum value with the reference image, and obtaining an alignment information for an underlying layer using a wafer alignment sensor.
摘要翻译：提供了一种用于对准晶片的方法，所述方法包括在曝光装置中加载和对准第一晶片，在第一晶片的多个晶片对准标记之间选择无缺陷晶片对准标记，并存储无缺陷晶片对准标记作为作业文件中的灰度参考图像，加载第二晶片并将第二晶片的多个晶片对准标记存储为灰度级晶片对准标记图像，分别比较第二晶片的多个晶片对准标记图像中的每一个利用第一晶片的参考图像逐像素来获得多个晶片对准标记图像中的每一个的匹配值，将多个匹配值中的每一个与在曝光装置中设置的最小值进行比较，代替晶片对准使用与参考图像相比具有小于最小值的匹配值的标记图像，并且获得用于基础层的对准信息 r使用晶圆对准传感器。

3. 发明申请

US20070042298A1 Method for manufacturing semiconductor device using immersion lithography process 审中-公开
标题翻译：使用浸渍光刻工艺制造半导体器件的方法
公开(公告)号：US20070042298A1
公开(公告)日：2007-02-22
申请号：US11481299
申请日：2006-07-05
申请人： Jae Jung , Sung Lee , Keun Ban , Cheol Bok , Seung Moon
发明人： Jae Jung , Sung Lee , Keun Ban , Cheol Bok , Seung Moon
IPC分类号： G03F7/26
CPC分类号： G03F7/70341
摘要： Disclosed is a method for manufacturing a semiconductor device using an immersion lithography process comprising rapidly accelerating the rotation of a wafer after exposing and before developing steps to remove an immersion lithography solution, thereby effectively reducing water mark defects.
摘要翻译：公开了一种使用浸没式光刻工艺制造半导体器件的方法，包括在曝光之后和在显影步骤之前快速加速晶片的旋转以去除浸没光刻溶液，从而有效地减少水痕缺陷。

4. 发明申请

US20050074709A1 Cleaning solution for photoresist and method for forming pattern using the same 失效
标题翻译：用于光致抗蚀剂的清洁溶液和使用其形成图案的方法
公开(公告)号：US20050074709A1
公开(公告)日：2005-04-07
申请号：US10875924
申请日：2004-06-24
申请人： Geun Lee , Sam Kim , Keun Ban
发明人： Geun Lee , Sam Kim , Keun Ban
IPC分类号： C11D1/00 , C11D1/06 , C11D3/39 , C11D11/00 , G03C5/00 , G03F7/32
CPC分类号： G03F7/322 , C11D1/004 , C11D11/0047
摘要： Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.
摘要翻译：本文公开了当形成光致抗蚀剂图案时在显影步骤的最后步骤中用于清洁半导体衬底的光致抗蚀剂清洁溶液。本文还公开了使用该溶液形成光致抗蚀剂图案的方法。本发明的清洗溶液包括作为主要成分的H 2 O，作为添加剂的表面活性剂和任选的醇化合物。本发明的清洗液比常规清洗液使用的蒸馏水具有更低的表面张力，从而提高了图案的崩溃性和稳定光刻胶图形的形成。

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