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1. 发明申请

US20080144799A1 Module and Method for Automatically Detecting and Switching between FXO and FXS Interfaces via Single RJ11 审中-公开
标题翻译：通过单个RJ11自动检测和切换FXO和FXS接口的模块和方法
公开(公告)号：US20080144799A1
公开(公告)日：2008-06-19
申请号：US11949499
申请日：2007-12-03
申请人： Chieh Chang , Kenneth Wisheng Ouyang , Yin-Kun Huang , Kuan-Hsi Chen , Chih-Sheng Hsu
发明人： Chieh Chang , Kenneth Wisheng Ouyang , Yin-Kun Huang , Kuan-Hsi Chen , Chih-Sheng Hsu
IPC分类号： H04M3/00
CPC分类号： H04M7/0069
摘要： A module and method for automatically detecting and switching between FXO and FXS interfaces via a single RJ11 is disclosed. The module comprises a RJ11 jack, a USB controller, a modem element, a SLIC module and a DAA module, wherein the USB controller is electrically coupled with a computer for automatically detecting whether a PSTN phone line or a traditional telephone is plugged into the RJ11 jack. According to the detection, the telephone can be connected to the Internet for making and answering a VoIP call via the computer; the computer can be connected to the Internet for making and answering a VoIP call via the modem element; or the computer can make/answer a call to/from the PSTN.
摘要翻译：公开了一种用于通过单个RJ11自动检测和切换FXO和FXS接口的模块和方法。该模块包括RJ11插孔，USB控制器，调制解调器元件，SLIC模块和DAA模块，其中USB控制器与计算机电连接，用于自动检测PSTN电话线路或传统电话机是否插入RJ11 插口。根据检测，电话可以连接到互联网，用于通过计算机进行VoIP应答; 计算机可以通过调制解调器元件连接到互联网进行和接听VoIP呼叫; 或者计算机可以拨打/接听来自PSTN的呼叫。

2. 发明申请

US20080049721A1 3-in-1 automatic call forward system 审中-公开
标题翻译： 3合1自动呼叫转移系统
公开(公告)号：US20080049721A1
公开(公告)日：2008-02-28
申请号：US11706182
申请日：2007-02-15
申请人： Kenneth Wisheng Ouyang , Yin-Kun Huang , Chih-Yuan Lee , Chih-Sheng Hsu
发明人： Kenneth Wisheng Ouyang , Yin-Kun Huang , Chih-Yuan Lee , Chih-Sheng Hsu
IPC分类号： H04L12/66
CPC分类号： H04M1/6033 , H04L12/5692 , H04M1/006 , H04M1/2535 , H04M1/72502 , H04M2250/02 , H04W88/10
摘要： A 3-in-1 automatic call forward system integrates the domestic phone, the mobile phone and the internet phone for switching the communication method automatically and choosing an appropriate method to transmit or receive a phone call. The users also can choose the same telecom service provider to perform communication with each other for reducing the telephone fees.
摘要翻译： 3合1自动呼叫转移系统集成了国内电话，手机和互联网电话，自动切换通信方式，并选择适当的方式发送或接收电话。用户还可以选择同一电信服务提供商进行通信，以减少电话费用。

3. 发明授权

US5956269A Non-volatile SRAM 失效
标题翻译：非易失性SRAM
公开(公告)号：US5956269A
公开(公告)日：1999-09-21
申请号：US964841
申请日：1997-11-05
申请人： Kenneth Wisheng Ouyang , Ding-Hsu Yen
发明人： Kenneth Wisheng Ouyang , Ding-Hsu Yen
IPC分类号： G11C11/412 , G11C16/00
CPC分类号： G11C11/4125
摘要： A method and devices are provided for producing a non-volatile SRAM, of the type composed of two back-to-back, cross-coupled, CMOS inverters, each with a PMOS and an NMOS and respective outputs Q and Q.about. connected therebetween, even when the cell is completely symmetrical, by creating a stable condition wherein Q.noteq.Q.about. through rendering the threshold voltages of the NMOS devices different. The threshold voltages of the NMOSs are made different by using hot electron injection. The hot electron effect is produced by meeting the conditions, that 1) one of the NMOSs must be in saturation condition, i.e., V.sub.DS .gtoreq.V.sub.GS -V.sub.th, where V.sub.DS is the drain to source voltage, V.sub.GS is the gate to source voltage, and V.sub.th the threshold voltage, of the NMOS, and 2) V.sub.DS must be large enough, typically about 7 V, depending on the fabrication process. To achieve these conditions, for example, firstly a regular write function is performed on the SRAM so that the cell will have a predetermined condition, i.e., a high, low or low, high value. A negative voltage pulse is then applied to the inverter with the high output value to put its NMOS in a saturation state. This results in producing hot electrons that are stored in the gate oxide of the NMOS, thus making the threshold voltage of the two NMOS devices unbalanced, i.e., V.sub.th1 .notident.V.sub.th2, and achieving the function of hard memory.
摘要翻译：提供了一种用于产生由两个背对背，交叉耦合的CMOS反相器组成的类型的非易失性SRAM的方法和装置，每个都具有PMOS和NMOS，并且各自的输出Q和Q差分连接在它们之间，即使当电池完全对称时，通过产生稳定的条件，其中通过使NMOS器件的阈值电压不同，其中Q NOTEQUAL Q DIFIFERENCE。通过使用热电子注入使NMOS的阈值电压不同。热电子效应是通过满足以下条件产生的：1）其中一个NMOS必须处于饱和状态，即VDS> / = VGS-Vth，其中VDS是漏极到源极电压，VGS是栅极到源极电压，并且Vth的阈值电压为Vth，以及2）VDS必须足够大，通常约为7V，这取决于制造工艺。为了实现这些条件，例如，首先在SRAM上执行常规写入功能，使得单元将具有预定条件，即高，低或低的高值。然后将负电压脉冲以高输出值施加到逆变器，以使其NMOS处于饱和状态。这导致存储在NMOS的栅极氧化物中的热电子，从而使得两个NMOS器件的阈值电压不平衡，即Vth1 NOTEQUAL Vth2，并实现硬存储器的功能。

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