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1. 发明授权

US09224566B2 Fuse driver circuits 有权
标题翻译：保险丝驱动电路
公开(公告)号：US09224566B2
公开(公告)日：2015-12-29
申请号：US12965611
申请日：2010-12-10
申请人： Kenneth P. Snowdon , William Robert Newberry , James Hall , Roy Yarbrough
发明人： Kenneth P. Snowdon , William Robert Newberry , James Hall , Roy Yarbrough
IPC分类号： H01H37/76 , H01H85/46 , G01R31/07
CPC分类号： H01H85/46 , G01R31/07 , H01H2085/466
摘要： Fuse driver circuits, fuse driver testing circuitry, and methods for testing the fuse driver circuits using the testing circuitry are described. In some embodiments, the fuse driver circuit can be made using a fuse, a NMOS transistor, and a PMOS transistor. The drain of the NMOS transistor can be connected to the negative end of the fuse. The source of the NMOS transistor can be connected to ground. The drain of the PMOS transistor can be connected to a positive end of the fuse. The NMOS and PMOS transistors provide enhanced robustness to the fuse driver circuit in both undervoltage and overvoltage conditions. Other embodiments are also described.
摘要翻译：描述了保险丝驱动器电路，熔丝驱动器测试电路以及使用测试电路测试熔丝驱动器电路的方法。在一些实施例中，熔丝驱动器电路可以使用熔丝，NMOS晶体管和PMOS晶体管来制造。 NMOS晶体管的漏极可以连接到保险丝的负端。 NMOS晶体管的源极可以连接到地。 PMOS晶体管的漏极可以连接到保险丝的正端。 NMOS和PMOS晶体管在欠压和过压条件下都能提供对熔丝驱动电路的增强的鲁棒性。还描述了其它实施例。

2. 发明授权

US08710900B2 Methods and apparatus for voltage selection for a MOSFET switch device 有权
标题翻译： MOSFET开关器件的电压选择方法和装置
公开(公告)号：US08710900B2
公开(公告)日：2014-04-29
申请号：US13427481
申请日：2012-03-22
申请人： Nickole Gagne , Kenneth P. Snowdon
发明人： Nickole Gagne , Kenneth P. Snowdon
IPC分类号： H03K17/687
CPC分类号： H03K17/063 , H03K2217/0054 , H03K2217/0081
摘要： In one general aspect, an apparatus including a first voltage rail, and a second voltage rail. The apparatus includes a first P-type metal-oxide-semiconductor field effect transistor (MOSFET) PMOS device between the first voltage rail and the second voltage rail where the first PMOS device is configured to electrically couple the first voltage rail to the second voltage rail in response to the first PMOS device being activated. The apparatus can also include a second PMOS device configured to provide a charge pump voltage produced by a charge pump device to the second voltage rail in response to the second PMOS device being activated and the first PMOS device being deactivated. The apparatus can also include a pass gate, and a driver circuit coupled to the pass gate and configured to operate based on a voltage of the second voltage rail.
摘要翻译：在一个一般方面，一种包括第一电压轨和第二电压轨的装置。该装置包括在第一电压轨和第二电压轨之间的第一P型金属氧化物半导体场效应晶体管（MOSFET）PMOS器件，其中第一PMOS器件被配置为将第一电压轨电耦合到第二电压轨响应于第一PMOS器件被激活。该装置还可以包括第二PMOS器件，其被配置为响应于第二PMOS器件被激活并且第一PMOS器件被去激活而将由电荷泵器件产生的电荷泵电压提供给第二电压轨。该装置还可以包括通过栅极和耦合到通过栅极并被配置为基于第二电压轨的电压进行操作的驱动器电路。

3. 发明授权

US08610489B2 Depletion-mode circuit 有权
标题翻译：耗电模式电路
公开(公告)号：US08610489B2
公开(公告)日：2013-12-17
申请号：US13471832
申请日：2012-05-15
申请人： Tyler Daigle , Julie Lynn Stultz , Kenneth P. Snowdon
发明人： Tyler Daigle , Julie Lynn Stultz , Kenneth P. Snowdon
IPC分类号： H03K17/56
CPC分类号： H03K17/06 , H03K2017/6875 , H03K2217/0054
摘要： This document discloses, among other things, a switch circuit that includes a depletion-mode field-effect transistor (DMFET) having an ON-state and an OFF-state, wherein the DMFET is configured to couple a first node to a second node in the ON-state, and wherein the DMFET is configured to isolate the first node from the second node in the OFF-state, a negative charge pump that is coupled to a gate terminal of the DMFET, the charge pump configured to supply a negative charge pump voltage to the gate terminal of the DMFET, and a negative discriminator coupled to the charge pump, the discriminator configured to compare a first voltage at the first node and a second voltage at the second node and determine the negative charge pump voltage based on the comparison.
摘要翻译：本文件尤其公开了一种开关电路，其包括具有导通状态和截止状态的耗尽型场效应晶体管（DMFET），其中DMFET被配置为将第一节点耦合到第二节点所述导通状态，并且其中所述DMFET被配置为在所述关断状态下将所述第一节点与所述第二节点隔离，所述负电荷泵耦合到所述DMFET的栅极端子，所述电荷泵被配置为提供负电荷对DMFET的栅极端子的泵浦电压和耦合到电荷泵的负鉴相器，鉴别器被配置为比较第一节点处的第一电压和第二节点处的第二电压，并且基于比较。

4. 发明申请

US20130229225A1 METHODS AND APPARATUS RELATED TO AN IMPROVED COMPLEMENTARY MOSFET SWITCH 有权
标题翻译：与改进的补充MOSFET开关相关的方法和装置
公开(公告)号：US20130229225A1
公开(公告)日：2013-09-05
申请号：US13410932
申请日：2012-03-02
申请人： Nickole Gagne , Kenneth P. Snowdon
发明人： Nickole Gagne , Kenneth P. Snowdon
IPC分类号： G05F3/02
CPC分类号： H03K17/04123 , H03K17/161 , H03K2217/0054 , H03K2217/0081
摘要： In one general aspect, an apparatus can include a complementary switch circuit including a first portion and a second portion, and a first driver circuit coupled to the first portion of the complementary switch circuit. The apparatus can include a positive charge pump device coupled to the first driver, and a second driver circuit coupled to the second portion of the complementary switch circuit. The apparatus can also include a negative charge pump device coupled to the second driver circuit.
摘要翻译：在一个一般方面，装置可以包括互补开关电路，其包括第一部分和第二部分，以及耦合到互补开关电路的第一部分的第一驱动电路。该装置可以包括耦合到第一驱动器的正电荷泵装置和耦合到互补开关电路的第二部分的第二驱动电路。该装置还可以包括耦合到第二驱动器电路的负电荷泵装置。

5. 发明申请

US20120198183A1 SUCCESSIVE APPROXIMATION RESISTOR DETECTION 有权
标题翻译：成功的近似电阻检测
公开(公告)号：US20120198183A1
公开(公告)日：2012-08-02
申请号：US13359006
申请日：2012-01-26
申请人： Randall Wetzel , Kenneth P. Snowdon , Kenneth O'Brien
发明人： Randall Wetzel , Kenneth P. Snowdon , Kenneth O'Brien
IPC分类号： G01R27/08 , G06F12/00
CPC分类号： G06F11/3013 , G06F11/3051 , G06F11/3058
摘要： An apparatus comprises a connector configured to receive an electrical contact of an accessory device that is electrically coupled to a resistor of the accessory device, a current source configured to apply a specified current to the resistor to generate a resulting voltage, a comparator configured to receive and compare the resulting voltage to a reference voltage, and a controller configured to store an outcome of the comparison as a bit in a register, to adjust the applied current using the outcome of the comparison, and to determine a resistance value for the resistor using the bit stored in the register.
摘要翻译：一种装置包括：连接器，被配置为接收电耦合到附件装置的电阻器的附件装置的电接触;电流源，被配置为向电阻器施加指定的电流以产生所得的电压;比较器，被配置为接收并将得到的电压与参考电压进行比较，以及控制器，被配置为将比较结果存储在寄存器中作为位，以使用比较结果调整所施加的电流，并且确定电阻器的电阻值，使用该位存储在寄存器中。

6. 发明授权

US09209651B2 VBUS power switch 有权
标题翻译： VBUS电源开关
公开(公告)号：US09209651B2
公开(公告)日：2015-12-08
申请号：US13114761
申请日：2011-05-24
申请人： James A. Siulinski , Kenneth P. Snowdon
发明人： James A. Siulinski , Kenneth P. Snowdon
IPC分类号： H02J9/00 , H02J9/06
CPC分类号： H02J9/061 , H03K17/56 , Y10T307/615
摘要： This document discusses, among other things, an electronic circuit and method for defaulting to a valid battery supply to power an electronic device. In an example, an electronic circuit can be configured to receive information about the battery supply (e.g., an internal battery), such as the battery supply voltage (VBAT), and to determine if the battery supply is valid or invalid using the received information (e.g., comparing the VBAT to a threshold). If VBAT is valid, the electronic device can default to receiving power from the battery supply. If VBAT is invalid, the electronic device can receive power from another power supply, such as an external supply.
摘要翻译：本文件除其他之外讨论了用于默认有效电池电源为电子设备供电的电子电路和方法。在一个示例中，电子电路可以被配置为接收关于电池供应（例如，内部电池）的信息，例如电池电源电压（VBAT），并且使用接收到的信息来确定电池供应是有效还是无效（例如，将VBAT与阈值进行比较）。如果VBAT有效，则电子设备可以默认从电池电源接收电力。如果VBAT无效，则电子设备可以从另一个电源（例如外部电源）接收电力。

7. 发明授权

US09020418B2 Methods and apparatus related to a repeater 有权
标题翻译：与中继器相关的方法和装置
公开(公告)号：US09020418B2
公开(公告)日：2015-04-28
申请号：US13408441
申请日：2012-02-29
申请人： Robert A Card , Kenneth P Snowdon
发明人： Robert A Card , Kenneth P Snowdon
IPC分类号： H04B3/36 , H04B1/60 , H04B7/15 , H04B7/14 , H04L25/20
CPC分类号： H04L25/20
摘要： In one general aspect, a repeater can include an input terminal configured to be coupled to a first portion of a MIPI signal path. The MIPI signal path being a unidirectional path between a receiver and a transmitter, the input terminal configured to receive a set of signals from the receiver via the MIPI signal path. The repeater can include an output terminal configured to be coupled to a second portion of the MIPI signal path, the first portion of the MIPI signal path and the second portion of the MIPI signal path having a combined distance greater than 30 centimeters.
摘要翻译：在一个一般方面，中继器可以包括被配置为耦合到MIPI信号路径的第一部分的输入端。 MIPI信号路径是接收机和发射机之间的单向路径，该输入终端经配置以经由MIPI信号路径从接收机接收一组信号。中继器可以包括被配置为耦合到MIPI信号路径的第二部分的输出端子，MIPI信号路径的第一部分和MIPI信号路径的第二部分具有大于30厘米的组合距离。

8. 发明申请

US20130307591A1 DEPLETION-MODE CIRCUIT 有权
标题翻译：分离模式电路
公开(公告)号：US20130307591A1
公开(公告)日：2013-11-21
申请号：US13471832
申请日：2012-05-15
申请人： Tyler Daigle , Julie Lynn Stultz , Kenneth P. Snowdon
发明人： Tyler Daigle , Julie Lynn Stultz , Kenneth P. Snowdon
IPC分类号： H03K17/06
CPC分类号： H03K17/06 , H03K2017/6875 , H03K2217/0054
摘要： This document discloses, among other things, a switch circuit that includes a depletion-mode field-effect transistor (DMFET) having an ON-state and an OFF-state, wherein the DMFET is configured to couple a first node to a second node in the ON-state, and wherein the DMFET is configured to isolate the first node from the second node in the OFF-state, a negative charge pump that is coupled to a gate terminal of the DMFET, the charge pump configured to supply a negative charge pump voltage to the gate terminal of the DMFET, and a negative discriminator coupled to the charge pump, the discriminator configured to compare a first voltage at the first node and a second voltage at the second node and determine the negative charge pump voltage based on the comparison.
摘要翻译：本文件尤其公开了一种开关电路，其包括具有导通状态和截止状态的耗尽型场效应晶体管（DMFET），其中DMFET被配置为将第一节点耦合到第二节点所述导通状态，并且其中所述DMFET被配置为在所述关断状态下将所述第一节点与所述第二节点隔离，所述负电荷泵耦合到所述DMFET的栅极端子，所述电荷泵被配置为提供负电荷对DMFET的栅极端子的泵浦电压和耦合到电荷泵的负鉴相器，鉴别器被配置为比较第一节点处的第一电压和第二节点处的第二电压，并且基于比较。

9. 发明授权

US08564918B2 Pass gate off isolation 有权
标题翻译：通关门隔离
公开(公告)号：US08564918B2
公开(公告)日：2013-10-22
申请号：US13028731
申请日：2011-02-16
申请人： Nickole Gagne , Kenneth P. Snowdon
发明人： Nickole Gagne , Kenneth P. Snowdon
IPC分类号： H02H3/00
CPC分类号： H03K17/063 , H03K3/356104 , H03K2017/066 , H03K2217/0036 , H03K2217/0054
摘要： This document discusses methods and apparatus for preventing or reducing sub-threshold pass gate leakage. In an example, an apparatus can include a pass gate configured to electrically couple a first node with a second node in a first state and to electrically isolate the first node from the second node in a second state, control logic configured to control the pass gate, wherein the control logic includes a supply rail, and an over-voltage circuit configured to compare voltages received at a plurality of input nodes and to couple an output to an input node a highest voltage. In an example, the output of over-voltage circuit can be selectively coupled to the supply rail.
摘要翻译：本文讨论了用于防止或减少次阈值通过栅极泄漏的方法和装置。在一个示例中，装置可以包括通路，其被配置为将第一节点与处于第一状态的第二节点电耦合，并且在第二状态下将第一节点与第二节点电隔离，控制逻辑被配置为控制通过门，其中所述控制逻辑包括电源轨，以及过电压电路，其被配置为比较在多个输入节点处接收的电压并将输出耦合到输入节点的最高电压。在一个示例中，过电压电路的输出可以选择性地耦合到电源轨。

10. 发明申请

US20130162334A1 NEGATIVE CHARGE PUMP 有权
标题翻译：负电荷泵
公开(公告)号：US20130162334A1
公开(公告)日：2013-06-27
申请号：US13338198
申请日：2011-12-27
申请人： Kenneth P. Snowdon
发明人： Kenneth P. Snowdon
IPC分类号： G05F3/02
CPC分类号： H02M3/073
摘要： Generally, this disclosure provides negative charge pump circuitry that is configured to supply a voltage that is less than a reference voltage (such as ground). The charge pump circuitry includes blocking circuitry that reduces or eliminates charge leakage so that a negative voltage may be developed at the output. The charge pump circuitry generally includes complimentary pairs of MOS switches that switch in a complimentary fashion according to charge developed on complimentary capacitors to provide a negative voltage power supply.
摘要翻译：通常，本公开提供了被配置为提供小于参考电压（例如接地）的电压的负电荷泵电路。电荷泵电路包括阻塞电路，其减少或消除电荷泄漏，从而可以在输出端产生负电压。电荷泵电路通常包括互补的MOS开关对，根据在互补电容器上产生的电荷以互补的方式切换以提供负电压电源。

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