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    • 3. 发明授权
    • MT CVD process
    • MT CVD工艺
    • US6146697A
    • 2000-11-14
    • US261001
    • 1999-03-02
    • Kenneth E. Undercoffer
    • Kenneth E. Undercoffer
    • C23C16/36C23C16/44C23C16/14
    • C23C16/36C23C16/44Y10T407/27
    • The present invention comprises a method for coating at least one substrate with a carbonitride-containing coating by a MT CVD process which includes heating a substrate or substrates to a reaction temperature in a reaction chamber and then introducing into the reaction chamber a deposition process gas comprising from about 1 to about 30% of a hydrogen halide and predetermined amounts of a carbon/nitrogen source, a metal-halogen compound, H.sub.2, and optionally N.sub.2 so that a layer of the carbonitride-containing coating deposits on the surface of the substrates or substrates. The present invention also includes embodiments for coating at least one substrate with a carbonitride-containing coating by a MT CVD process which includes maintaining a temperature gradient in the reaction chamber during the introduction of the deposition process gas into the reaction chamber. Carbonitride-containing coatings that may be applied by the method include carbonitrides, oxycarbonitrides, and borocarbonitrides of Ti, Hf, Zr, V, Nb, and Ta and their mixtures and alloys.
    • 本发明包括一种通过MT CVD方法用含碳氮化物的涂层涂覆至少一种基材的方法,该方法包括将基材或基材加热到反应室中的反应温度,然后将沉积工艺气体引入到沉积工艺气体中 约1至约30%的卤化氢和预定量的碳/氮源,金属卤素化合物,H 2和任选的N 2,使得含碳氮化物的涂层的层沉积在基材的表面上或 底物。 本发明还包括通过MT CVD方法用含有碳氮化物的涂层涂覆至少一个基材的实施方案,其包括在将沉积工艺气体引入反应室期间保持反应室中的温度梯度。 可以通过该方法施加的含碳氮化物的涂层包括Ti,Hf,Zr,V,Nb和Ta及其混合物和合金的碳氮化物,碳氮氧化物和硼碳氮化物。