专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07714383B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07714383B2
公开(公告)日：2010-05-11
申请号：US12258135
申请日：2008-10-24
申请人： Keiko Kawamura , Kenji Maeyama
发明人： Keiko Kawamura , Kenji Maeyama
IPC分类号： H01L29/94
CPC分类号： H01L29/7811 , H01L27/088 , H01L29/0634 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/407 , H01L29/66734 , H01L29/7813 , H01L29/861
摘要： A semiconductor device includes: a semiconductor layer, a first semiconductor region provided on a major surface of the semiconductor layer, a second semiconductor region provided in a surface portion of the first semiconductor region, a trench extending through the second semiconductor region and the first semiconductor region to the semiconductor layer, a first insulating film provided on an inner wall of the trench, a third semiconductor region filling the trench below an interface between the semiconductor layer and the first semiconductor region, a second insulating film provided on the third semiconductor region, a gate electrode filling the trench above the second insulating film. A portion of the first insulating film in contact with the semiconductor layer is opened. The semiconductor layer is in contact with the third semiconductor region through the opened portion.
摘要翻译：半导体器件包括：半导体层，设置在半导体层的主表面上的第一半导体区域，设置在第一半导体区域的表面部分中的第二半导体区域，延伸穿过第二半导体区域的沟槽和第一半导体设置在所述沟槽的内壁上的第一绝缘膜，在所述半导体层和所述第一半导体区域之间的界面下方填充所述沟槽的第三半导体区域，设置在所述第三半导体区域上的第二绝缘膜，栅电极填充第二绝缘膜上方的沟槽。与半导体层接触的第一绝缘膜的一部分被打开。半导体层通过开口部分与第三半导体区域接触。

2. 发明申请

US20070138546A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070138546A1
公开(公告)日：2007-06-21
申请号：US11608003
申请日：2006-12-07
申请人： Keiko Kawamura , Kenji Maeyama
发明人： Keiko Kawamura , Kenji Maeyama
IPC分类号： H01L29/94
CPC分类号： H01L29/7811 , H01L27/088 , H01L29/0634 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/407 , H01L29/66734 , H01L29/7813 , H01L29/861
摘要： A semiconductor device includes: a semiconductor layer, a first semiconductor region provided on a major surface of the semiconductor layer, a second semiconductor region provided in a surface portion of the first semiconductor region, a trench extending through the second semiconductor region and the first semiconductor region to the semiconductor layer, a first insulating film provided on an inner wall of the trench, a third semiconductor region filling the trench below an interface between the semiconductor layer and the first semiconductor region, a second insulating film provided on the third semiconductor region, a gate electrode filling the trench above the second insulating film. A portion of the first insulating film in contact with the semiconductor layer is opened. The semiconductor layer is in contact with the third semiconductor region through the opened portion.
摘要翻译：半导体器件包括：半导体层，设置在半导体层的主表面上的第一半导体区域，设置在第一半导体区域的表面部分中的第二半导体区域，延伸穿过第二半导体区域的沟槽和第一半导体设置在所述沟槽的内壁上的第一绝缘膜，在所述半导体层和所述第一半导体区域之间的界面下方填充所述沟槽的第三半导体区域，设置在所述第三半导体区域上的第二绝缘膜，栅电极填充第二绝缘膜上方的沟槽。与半导体层接触的第一绝缘膜的一部分被打开。半导体层通过开口部分与第三半导体区域接触。

3. 发明申请

US20090121285A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20090121285A1
公开(公告)日：2009-05-14
申请号：US12258135
申请日：2008-10-24
申请人： Keiko KAWAMURA , Kenji Maeyama
发明人： Keiko KAWAMURA , Kenji Maeyama
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L27/088 , H01L29/0634 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/407 , H01L29/66734 , H01L29/7813 , H01L29/861
摘要： A semiconductor device includes: a semiconductor layer, a first semiconductor region provided on a major surface of the semiconductor layer, a second semiconductor region provided in a surface portion of the first semiconductor region, a trench extending through the second semiconductor region and the first semiconductor region to the semiconductor layer, a first insulating film provided on an inner wall of the trench, a third semiconductor region filling the trench below an interface between the semiconductor layer and the first semiconductor region, a second insulating film provided on the third semiconductor region, a gate electrode filling the trench above the second insulating film. A portion of the first insulating film in contact with the semiconductor layer is opened. The semiconductor layer is in contact with the third semiconductor region through the opened portion.
摘要翻译：半导体器件包括：半导体层，设置在半导体层的主表面上的第一半导体区域，设置在第一半导体区域的表面部分中的第二半导体区域，延伸穿过第二半导体区域的沟槽和第一半导体设置在所述沟槽的内壁上的第一绝缘膜，在所述半导体层和所述第一半导体区域之间的界面下方填充所述沟槽的第三半导体区域，设置在所述第三半导体区域上的第二绝缘膜，栅电极填充第二绝缘膜上方的沟槽。与半导体层接触的第一绝缘膜的一部分被打开。半导体层通过开口部分与第三半导体区域接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式