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1. 发明申请

US20060081891A1 Nonvolatile semiconductor memory capable of storing data of two bits or more per cell 审中-公开
标题翻译：能够存储每个单元两位或更多位数据的非易失性半导体存储器
公开(公告)号：US20060081891A1
公开(公告)日：2006-04-20
申请号：US11252619
申请日：2005-10-19
申请人： Kenichirou Nakagawa
发明人： Kenichirou Nakagawa
IPC分类号： H01L29/80
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/40117 , H01L29/7923
摘要： A nonvolatile semiconductor memory includes a gate insulating layer, a control gate layer, a first silicide layer, charge accumulating layers, memory gate layers and second silicide layers. The gate insulating layer is formed on a first region of a semiconductor substrate. The control gate layer is formed on the gate insulating layer. The first silicide layer is formed on the control gate layer. The charge accumulating layer is formed on one side of the first region of the semiconductor substrate, and capable to accumulate charges. The memory gate layers is formed on the charge accumulating layer, away from the control gate layer. The second silicide layer is formed on the memory gate layer. The memory gate layer includes a thick gate layer and a thin gate layer. The thick gate layer is formed far side from the control gate layer, and bonded to the second silicide layer. The thin gate layer is formed near side from the control gate layer, thinner in a layer thickness than the thick gate layer and shorter in a height than the control gate layer.
摘要翻译：非易失性半导体存储器包括栅极绝缘层，控制栅极层，第一硅化物层，电荷累积层，存储栅极层和第二硅化物层。栅极绝缘层形成在半导体衬底的第一区域上。控制栅极层形成在栅极绝缘层上。第一硅化物层形成在控制栅极层上。电荷累积层形成在半导体衬底的第一区域的一侧上，并且能够积累电荷。存储栅极层形成在电荷累积层上，远离控制栅极层。第二硅化物层形成在存储器栅极层上。存储栅极层包括厚栅极层和薄栅极层。厚栅极层与控制栅极层远离，并与第二硅化物层结合。薄栅层形成在靠近控制栅极层的一侧，层厚度比厚栅极薄，层厚比控制栅极层高。

2. 发明申请

US20060290709A1 Information processing method and apparatus 审中-公开
标题翻译：信息处理方法和装置
公开(公告)号：US20060290709A1
公开(公告)日：2006-12-28
申请号：US10555410
申请日：2004-06-01
申请人： Hiromi Omi , Makoto Hirota , Kenichirou Nakagawa
发明人： Hiromi Omi , Makoto Hirota , Kenichirou Nakagawa
IPC分类号： G09G5/02
CPC分类号： G06F3/038 , G06F3/16 , G10L15/1815 , G10L15/1822 , G10L15/19
摘要： In an information processing method for processing a user's instruction on the basis of a plurality of pieces of input information which are input by a user using a plurality of types of input modalities, each of the plurality of types of input modalities has a description including correspondence between the input contents and semantic attributes. Each input content is acquired by parsing each of the plurality of pieces of input information which are input using the plurality of types of input modalities, and semantic attributes of the acquired input contents are acquired from the description. A multimodal input integration unit integrates the acquired input contents on the basis of the acquired semantic attributes.
摘要翻译：在用于基于由用户使用多种类型的输入模式输入的多条输入信息来处理用户指令的信息处理方法中，多种类型的输入模式中的每一种具有包括对应关系的描述在输入内容和语义属性之间。通过解析使用多种类型的输入模式输入的多个输入信息中的每一个来获取每个输入内容，并且从该描述中获取所获取的输入内容的语义属性。多模态输入整合单元基于所获取的语义属性来集成所获取的输入内容。

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