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1. 发明授权

US08773831B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US08773831B2
公开(公告)日：2014-07-08
申请号：US13495797
申请日：2012-06-13
申请人： Akinobu Onishi , Yasuhiro Hinokuma , Kazuyuki Kobayashi , Kengo Murase
发明人： Akinobu Onishi , Yasuhiro Hinokuma , Kazuyuki Kobayashi , Kengo Murase
IPC分类号： H02H3/20
CPC分类号： H03F3/45188
摘要： A semiconductor integrated circuit that is efficiently reduced in a noise level is offered. P-channel type MOS transistors M1 and M2 serving as differential input transistors have a thin gate oxide film in order to reduce the noise level. A protection circuit to protect the P-channel type MOS transistors M1 and M2 from overvoltage is formed including P-channel type MOS transistors M3 and M4. The P-channel type MOS transistor M3 is a first protection transistor to protect the P-channel type MOS transistor M1 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M1. The P-channel type MOS transistor M4 is a second protection transistor to protect the P-channel type MOS transistor M2 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M2.
摘要翻译：提供了可以有效降低噪声水平的半导体集成电路。用作差分输入晶体管的P沟道型MOS晶体管M1和M2具有薄的栅极氧化膜，以便降低噪声水平。形成保护P沟道型MOS晶体管M1和M2免受过电压的保护电路，其包括P沟道型MOS晶体管M3和M4。 P沟道型MOS晶体管M3是用于保护P沟道型MOS晶体管M1免受过电压的第一保护晶体管，并且连接到P沟道型MOS晶体管M1的漏极。 P沟道型MOS晶体管M4是用于保护P沟道型MOS晶体管M2免受过电压的第二保护晶体管，并且连接到P沟道型MOS晶体管M2的漏极。

2. 发明申请

US20120320482A1 SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：半导体集成电路
公开(公告)号：US20120320482A1
公开(公告)日：2012-12-20
申请号：US13495797
申请日：2012-06-13
申请人： Akinobu ONISHI , Yasuhiro Hinokuma , Kazuyuki Kobayashi , Kengo Murase
发明人： Akinobu ONISHI , Yasuhiro Hinokuma , Kazuyuki Kobayashi , Kengo Murase
IPC分类号： H02H3/20
CPC分类号： H03F3/45188
摘要： A semiconductor integrated circuit that is efficiently reduced in a noise level is offered. P-channel type MOS transistors M1 and M2 serving as differential input transistors have a thin gate oxide film in order to reduce the noise level. A protection circuit to protect the P-channel type MOS transistors M1 and M2 from overvoltage is formed including P-channel type MOS transistors M3 and M4. The P-channel type MOS transistor M3 is a first protection transistor to protect the P-channel type MOS transistor M1 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M1. The P-channel type MOS transistor M4 is a second protection transistor to protect the P-channel type MOS transistor M2 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M2.
摘要翻译：提供了可以有效降低噪声水平的半导体集成电路。用作差分输入晶体管的P沟道型MOS晶体管M1和M2具有薄的栅极氧化膜，以便降低噪声水平。形成保护P沟道型MOS晶体管M1和M2免受过电压的保护电路，其包括P沟道型MOS晶体管M3和M4。 P沟道型MOS晶体管M3是用于保护P沟道型MOS晶体管M1免受过电压的第一保护晶体管，并且连接到P沟道型MOS晶体管M1的漏极。 P沟道型MOS晶体管M4是用于保护P沟道型MOS晶体管M2免受过电压的第二保护晶体管，并且连接到P沟道型MOS晶体管M2的漏极。

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