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    • 6. 发明申请
    • Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
    • 使用在结构上纵向重叠的多个激光束点的半导体结构处理
    • US20050282319A1
    • 2005-12-22
    • US11051261
    • 2005-02-04
    • Kelly BrulandBrian BairdHo LoRichard HarrisYunlong Sun
    • Kelly BrulandBrian BairdHo LoRichard HarrisYunlong Sun
    • B23K26/06B23K26/067H01L21/00H01L21/26H01L21/302H01L21/324H01L21/42H01L21/461H01L21/477H01L21/84H01L23/525
    • B23K26/067B23K26/0604B23K26/0613H01L21/76894H01L23/5258H01L27/1052H01L27/10894H01L2924/0002H01L2924/00
    • Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.
    • 方法和系统使用激光脉冲来处理半导体衬底上或其中的选定结构。 该结构具有表面,宽度和长度。 随着激光脉冲处理所选择的结构,激光脉冲沿着沿扫描光束路径相对于衬底移动的轴传播。 所述方法同时在所选择的结构上产生沿相应的第一和第二激光束轴线在不同的第一和第二位置与所选择的结构相交的第一和第二激光束脉冲。 第一和第二激光束脉冲冲击所选结构的表面上相应的第一和第二光束点。 每个光束点至少包含所选链接的宽度。 第一和第二光束斑点沿着所选择的结构的长度在空间上彼此偏移以限定由第一和第二光束点两者覆盖的重叠区域,以及由第一和第二光束斑点中的一个或两个覆盖的总区域 。 总区域大于第一束斑,并且大于第二束斑。 该方法设置第一和第二激光束脉冲的相应的第一和第二能量值,以便在整个区域的至少一部分中跨结构的宽度对所选结构进行完全深度处理。