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    • 1. 发明授权
    • Substrate anchor for undercut silicon on insulator microstructures
    • 底切绝缘子微结构的基底锚固
    • US5476819A
    • 1995-12-19
    • US251902
    • 1994-06-01
    • Keith O. Warren
    • Keith O. Warren
    • G01P15/12G01P15/08G01P15/125G01P15/13H01L21/306H01L29/84H01L21/465
    • G01P15/0802G01P15/125G01P15/131G01P2015/0828
    • An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate through a variety of a etching and bonding processes is disclosed. The processes entail ion implantation and formation of an oxide support layer below the proofmass, integrally bonding two complementary proofmass and substrate structures together, and then removing the oxide support layer to leave the proofmass supported by the hinge within the body of silicon material. The proofmass may be electrically connected to a lead extending through an etched recess in one of the substrates, and the proofmass may be electrically isolated or separated from the substrates by an oxide layer and by a change in conductivity type of the semiconductor material wherein the hinge is structurally mounted to the substrates. In a bond and etch back process, the wafer is processed, sawed in half, and then bonded together again wherein the complementary halves are joined to obtain the finished accelerometer. As part of the bond and etch-back process, an anchor for bridging the silicon substrate to an oxide support substrate includes using a selective epitaxy or non-selective epitaxy process to grow the polysilicon anchors.
    • 通过各种蚀刻和粘合工艺公开了通过在硅衬底中形成校样和至少一个相关联的铰链来制造加速度计。 这些过程需要离子注入和在校样下方形成氧化物载体层,将两个互补的校正材料和衬底结构整体地结合在一起,然后去除氧化物载体层,以将由硅材料体内的铰链支撑的校准物留下。 校样物可以电连接到延伸穿过其中一个衬底中的蚀刻凹槽的引线,并且校样物可以通过氧化物层与衬底电隔离或分离,并且通过半导体材料的导电类型的变化,其中铰链 结构上安装在基板上。 在接合和回蚀工艺中,将晶片加工成锯片,然后再次粘合在一起,其中互补的半部分连接以获得成品的加速度计。 作为粘结和回蚀工艺的一部分,用于将硅衬底桥接到氧化物支撑衬底的锚固件包括使用选择性外延或非选择性外延工艺来生长多晶硅锚定件。
    • 2. 发明授权
    • Force balance instrument with electrostatic charge control
    • 具有静电充电控制的力平衡仪器
    • US5142921A
    • 1992-09-01
    • US605947
    • 1990-10-29
    • Robert E. StewartKeith O. Warren
    • Robert E. StewartKeith O. Warren
    • G01P15/125G01D3/06G01L1/08G01P15/13
    • G01P15/131
    • A force balanced instrument, such as an accelerometer, employs a pendulous mass having combined electrostatic pickoff and forcing plates on opposite sides thereof. The plates provide a constant attractive force in successive periods acting alternatively on opposing sides of the sensitive element. Force balance is achieved by controlling the duty cycle so that the difference in duration between each of the parts of a full cycle is a linear measure of acceleration. Voltage on each of the forcing plates is sensed independently immediately after each is charged with a fixed charging pulse which provides a fixed force level over the duration of the part cycle. The two successive voltage samples are stored, and the difference between them integrated to control the duty cycle of a pulse width modulator, which itself controls the duration of application of the alternately directed forces applied by the respective plates to the pendulous mass.
    • 诸如加速度计的力平衡仪器使用具有组合的静电吸收和强制板在其相对侧上的下摆质量。 这些板在连续的周期中提供恒定的吸引力,作用在敏感元件的相对侧上。 通过控制占空比实现力平衡,使得整个循环的每个部分之间的持续时间差是加速度的线性度量。 在每个强制板上的电压在每个被充满固定的充电脉冲之后立即独立地感测,在固定的充电脉冲上提供在部件周期的持续时间内的固定的力水平。 存储两个连续的电压样本,并且它们之间的差被集成以控制脉冲宽度调制器的占空比,其本身控制由相应的板施加到下摆质量的交替指向的力的施加持续时间。
    • 3. 发明授权
    • Electrostatically force balanced silicon accelerometer
    • 静电强制平衡硅加速度计
    • US5850042A
    • 1998-12-15
    • US569356
    • 1995-12-08
    • Keith O. Warren
    • Keith O. Warren
    • G01P15/12G01P15/08G01P15/125G01P15/13H01L29/84
    • G01P15/0802G01P15/125G01P15/131G01P2015/0828
    • An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate by ion implantation and the formation of an oxide support layer below the proofmass, subsequently integrally bonding two complementary proofmass and substrate structures together, and then removing the oxide support layer to leave the proofmass supported by the hinge within the body of silicon material. The proofmass may be electrically connected to a lead extending through an etched recess in one of the substrates; and the proofmass may be electrically isolated or separated from the substrates by an oxide layer and by a change in conductivity type of the semiconductor material where the hinge is structurally mounted to the substrates.
    • 加速度计是通过在硅衬底中通过离子注入形成校样和至少一个相关联的铰链来制造的,并且在校正质量下形成氧化物支撑层,随后将两个互补的校准质量和衬底结构整体地结合在一起,然后去除氧化物载体 层离开由硅材料体内的铰链支撑的校准。 校样物可以电连接到延伸穿过其中一个衬底中的蚀刻凹槽的引线; 并且校样物可以通过氧化物层和衬底的结构上安装到衬底上的半导体材料的导电类型的变化而与衬底电隔离或分离。
    • 4. 发明授权
    • Method for purging a multi-layer sacrificial etched silicon substrate
    • 吹扫多层牺牲蚀刻硅衬底的方法
    • US5840199A
    • 1998-11-24
    • US841938
    • 1997-04-08
    • Keith O. Warren
    • Keith O. Warren
    • G01P15/125H01L21/00
    • G01P15/125
    • An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate through a variety of a etching and bonding processes is disclosed. The processes entail ion implantation and formation of an oxide support layer below the proofmass, integrally bonding two complementary proofmass and substrate structures together, and then removing the oxide support layer to leave the proofmass supported by the hinge within the body of silicon material. The proofmass may be electrically connected to a lead extending through an etched recess in one of the substrates, and the proofmass may be electrically isolated or separated from the substrates by an oxide layer and by a change in conductivity type of the semiconductor material wherein the hinge is structurally mounted to the substrates. In a bond and etch back process, the wafer is processed, sawed in half, and then bonded together again wherein the complementary halves are joined to obtain the finished accelerometer. As part of the bond and etch-back process, an anchor for bridging the silicon substrate to an oxide support substrate includes using a selective epitaxy or non-selective epitaxy process to grow the polysilicon anchors.
    • 通过各种蚀刻和粘合工艺公开了通过在硅衬底中形成校样和至少一个相关联的铰链来制造加速度计。 这些过程需要离子注入和在校样下方形成氧化物载体层,将两个互补的校正材料和衬底结构整体地结合在一起,然后去除氧化物载体层,以使得由硅材料体内的铰链支撑的校准物质。 校样物可以电连接到延伸穿过其中一个衬底中的蚀刻凹槽的引线,并且校样物可以通过氧化物层与衬底电隔离或分离,并且通过半导体材料的导电类型的变化,其中铰链 结构上安装在基板上。 在接合和回蚀工艺中,将晶片加工成锯片,然后再次粘合在一起,其中互补的半部分连接以获得成品的加速度计。 作为粘结和回蚀工艺的一部分,用于将硅衬底桥接到氧化物支撑衬底的锚固件包括使用选择性外延或非选择性外延工艺来生长多晶硅锚定件。
    • 6. 发明授权
    • Digital force balanced instrument
    • 数字力平衡仪
    • US5497660A
    • 1996-03-12
    • US251591
    • 1994-05-31
    • Keith O. Warren
    • Keith O. Warren
    • G01P15/125G01P15/13G01P15/00
    • G01P15/131G01P15/125
    • A digital force balanced instrument such as an accelerometer that incorporates a directly digital electrostatic forcer with servo loop plates charged by a digital feedback loop is disclosed. The accelerometer has a proofmass electrode suspended in a cantilever configuration between electrodes on either side thereof, which proofmass is displaced upon acceleration. Each side electrode includes a plurality of electrostatic plates sized in binarily weighted multiples of area. An induced signal in the proofmass electrode is quantized via A/D converter in the feedback loop, which activates the appropriate number of plates to force the proofmass to an initial position.
    • 公开了一种数字力平衡仪器,例如加速度计,其包括由数字反馈回路充电的具有伺服环路板的直接数字静电除尘器。 加速度计具有悬挂在其两侧的电极之间的悬臂结构的校准电极,该加强度计在加速时被移位。 每个侧电极包括多个静电板,其尺寸为二次加权的倍数倍。 在反馈回路中,通过A / D转换器量化校样电极中的感应信号,激活适当数量的板,以将校准力强制到初始位置。