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1. 发明授权

US5801404A High efficiency, aluminum gallium arsenide LED arrays utilizing zinc-stop diffusion layers 失效
标题翻译：高效率的铝砷化镓LED阵列利用锌 - 停扩散层
公开(公告)号：US5801404A
公开(公告)日：1998-09-01
申请号：US655052
申请日：1996-05-29
申请人： Keith Brian Kahen , Gopalan Rajeswaran
发明人： Keith Brian Kahen , Gopalan Rajeswaran
IPC分类号： B41J2/45 , H01L27/15 , H01L33/00 , H01L33/30 , H01L33/44
CPC分类号： H01L33/44 , B41J2/45 , H01L27/153 , H01L33/0062 , H01L33/305
摘要： An AlGaAs-based light emitting diode array is disclosed wherein each individual pixel contains a Zn-stop diffusion layer of p-type conductivity to control the diffusion process.
摘要翻译：公开了一种基于AlGaAs的发光二极管阵列，其中每个单独的像素包含用于控制扩散过程的p型导电性的Zn-stop扩散层。

2. 发明授权

US08784703B2 Method of making highly-confined semiconductor nanocrystals 有权
标题翻译：制备高度约束半导体纳米晶体的方法
公开(公告)号：US08784703B2
公开(公告)日：2014-07-22
申请号：US13275595
申请日：2011-10-18
申请人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
发明人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
IPC分类号： H01B1/06
CPC分类号： C09K11/02 , C09K11/565 , C09K11/70 , C09K11/883 , H01L33/502
摘要： A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals.
摘要翻译：制备高约束半导体纳米晶体的胶体溶液的方法包括：通过组合溶剂，生长配体和至多一个半导体前体形成第一溶液; 将第一溶液加热至成核温度; 并向第一溶液中加入第二溶液，其具有溶剂，生长配体以及与第一溶液中的至少一种另外且不同的前体，以形成具有紧密均匀半导体区域的纳米晶体的粗溶液。该方法还包括：等待0.5至20秒，并向粗溶液中加入具有溶剂，生长配体和至少一种另外且不同于第一和第二溶液的另外和不同前体的第三溶液; 并且降低生长温度以使得能够在致密均匀的半导体区域周围形成梯度合金区域，从而形成高约束半导体纳米晶体的胶体溶液。

3. 发明申请

US20130092886A1 METHOD OF MAKING HIGHLY-CONFINED SEMICONDUCTOR NANOCRYSTALS 有权
标题翻译：制备高密度半导体纳米晶体的方法
公开(公告)号：US20130092886A1
公开(公告)日：2013-04-18
申请号：US13275595
申请日：2011-10-18
申请人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
发明人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
IPC分类号： H01B1/02 , H01B1/10
CPC分类号： C09K11/02 , C09K11/565 , C09K11/70 , C09K11/883 , H01L33/502
摘要： A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals.
摘要翻译：制备高约束半导体纳米晶体的胶体溶液的方法包括：通过组合溶剂，生长配体和至多一个半导体前体形成第一溶液; 将第一溶液加热至成核温度; 并向第一溶液中加入第二溶液，其具有溶剂，生长配体以及与第一溶液中的至少一种另外且不同的前体，以形成具有紧密均匀半导体区域的纳米晶体的粗溶液。该方法还包括：等待0.5至20秒，并向粗溶液中加入具有溶剂，生长配体和至少一种另外且不同于第一和第二溶液的另外和不同前体的第三溶液; 并且降低生长温度以使得能够在致密均匀的半导体区域周围形成梯度合金区域，从而形成高约束半导体纳米晶体的胶体溶液。

4. 发明申请

US20120205586A1 INDIUM PHOSPHIDE COLLOIDAL NANOCRYSTALS 审中-公开
标题翻译：磷酸盐胶体纳米晶体
公开(公告)号：US20120205586A1
公开(公告)日：2012-08-16
申请号：US13024555
申请日：2011-02-10
申请人： Xiaofan Ren , Keith Brian Kahen , Matthew Holland
发明人： Xiaofan Ren , Keith Brian Kahen , Matthew Holland
IPC分类号： C09K11/02 , B05D7/00 , B82Y20/00
CPC分类号： C30B29/40 , C01B25/08 , C30B7/00
摘要： A method of making a colloidal solution of indium phosphide semiconductor nanocrystals, includes forming a first solution by combining solvents and ligands; and heating the first solution to a temperature equal to or higher than 290° C. and, while heating, adding to the first solution, a second solution containing trialkylindium, a phosphorus precursor and solvents and ligands so that a reaction takes place that forms a colloidal solution of indium phosphide semiconductor nanocrystals. The method further includes forming core shell indium phosphide semiconductor nanocrystals by forming semiconducting shells on the nanocrystals.
摘要翻译：制造磷化铟半导体纳米晶体的胶体溶液的方法包括通过结合溶剂和配体形成第一溶液; 并将第一溶液加热到等于或高于290℃的温度，并且在加热的同时向第一溶液中加入含有三烷基鎓，磷前体和溶剂和配体的第二溶液，使得形成反应磷化铟半导体纳米晶体的胶体溶液。该方法还包括通过在纳米晶体上形成半导体壳形成核心壳磷化铟半导体纳米晶体。

5. 发明申请

US20130092883A1 HIGHLY-CONFINED SEMICONDUCTOR NANOCRYSTALS 审中-公开
标题翻译：高分子半导体纳米晶体
公开(公告)号：US20130092883A1
公开(公告)日：2013-04-18
申请号：US13275424
申请日：2011-10-18
申请人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
发明人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
IPC分类号： H01B1/02 , B82Y99/00
CPC分类号： C09K11/025 , B82Y30/00 , B82Y40/00 , C09K11/883
摘要： A high confinement semiconductor nanocrystal and method for making such nanocrystal are described. The nanocrystal includes a compact homogenous semiconductor region having a first composition in the center area of the nanocrystal, with its diameter being less than 2.0 nm; and a gradient alloy region comprised of a second varying alloy composition which extends from the surface of the compact homogenous semiconductor region to the surface of the nanocrystal.
摘要翻译：描述了一种高约束半导体纳米晶体和制造这种纳米晶体的方法。纳米晶体包括在纳米晶体的中心区域具有第一组成的致密均匀的半导体区域，其直径小于2.0nm; 以及由从致密均匀半导体区域的表面延伸到纳米晶体的表面的第二变化合金组成的梯度合金区域。

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