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1. 发明授权

US08507943B2 Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US08507943B2
公开(公告)日：2013-08-13
申请号：US13430637
申请日：2012-03-26
申请人： Keita Akiyama , Takuya Kazama
发明人： Keita Akiyama , Takuya Kazama
IPC分类号： H01L33/48
CPC分类号： H01L33/38 , H01L33/14 , H01L33/22
摘要： A semiconductor light-emitting element with a counter electrode structure can include a first electrode including at least one linear first electrode piece that is disposed on a surface of a first semiconductor layer close to the support substrate and in ohmic contact with the first semiconductor layer, a second electrode including at least one linear second electrode piece that is disposed on a surface of a second semiconductor layer and in ohmic contact with the second semiconductor layer. A plurality of conical projections can be formed on the second semiconductor layer. The first electrode piece and the second electrode piece can be disposed soas not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body but to be parallel with each other when viewed from above.
摘要翻译：具有对电极结构的半导体发光元件可以包括：第一电极，包括至少一个线性第一电极片，该线性第一电极片设置在靠近所述支撑衬底的第一半导体层的表面上，并与所述第一半导体层欧姆接触; 第二电极，其包括设置在第二半导体层的表面上并与第二半导体层欧姆接触的至少一个线性第二电极片。可以在第二半导体层上形成多个锥形突起。第一电极片和第二电极片可以在半导体发光层叠体的堆叠方向上彼此不重叠，而是从上方观察时彼此平行。

2. 发明申请

US20120241808A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20120241808A1
公开(公告)日：2012-09-27
申请号：US13430637
申请日：2012-03-26
申请人： Keita Akiyama , Takuya Kazama
发明人： Keita Akiyama , Takuya Kazama
IPC分类号： H01L33/48
CPC分类号： H01L33/38 , H01L33/14 , H01L33/22
摘要： A semiconductor light-emitting element with a counter electrode structure can include a first electrode including at least one linear first electrode piece that is disposed on a surface of a first semiconductor layer close to the support substrate and in ohmic contact with the first semiconductor layer, a second electrode including at least one linear second electrode piece that is disposed on a surface of a second semiconductor layer and in ohmic contact with the second semiconductor layer. A plurality of conical projections can be formed on the second semiconductor layer. The first electrode piece and the second electrode piece can be disposed so as not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body but to be parallel with each other when viewed from above.
摘要翻译：具有对电极结构的半导体发光元件可以包括：第一电极，包括至少一个线性第一电极片，该线性第一电极片设置在靠近所述支撑衬底的第一半导体层的表面上，并与所述第一半导体层欧姆接触; 第二电极，其包括设置在第二半导体层的表面上并与第二半导体层欧姆接触的至少一个线性第二电极片。可以在第二半导体层上形成多个锥形突起。第一电极片和第二电极片可以在半导体发光层叠体的堆叠方向上彼此不重叠，而是从上方观察时彼此平行。

3. 发明授权

US08367449B2 Semiconductor light-emitting apparatus and method of manufacturing the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US08367449B2
公开(公告)日：2013-02-05
申请号：US13026564
申请日：2011-02-14
申请人： Chiharu Sasaki , Wataru Tamura , Keita Akiyama
发明人： Chiharu Sasaki , Wataru Tamura , Keita Akiyama
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L33/325 , H01L21/02543 , H01L21/02573 , H01L21/0262 , H01L33/0066
摘要： A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm−3. The active layer is made of (AlyGa1-y)xIn1-xP (0
摘要翻译：具有高发光效率和高击穿电压的半导体发光装置以及批次之间降低的击穿电压变化。半导体发光装置包括第一覆盖层和第二覆盖层。第二覆盖层的平均掺杂剂浓度低于第一覆盖层的平均掺杂剂浓度。发光装置还包括平均掺杂剂浓度为2×1016至4×1016cm-3的有源层。有源层由（AlyGa1-y）xIn1-xP（0

4. 发明授权

US08610151B2 Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element 有权
标题翻译：半导体发光元件及半导体发光元件的制造方法
公开(公告)号：US08610151B2
公开(公告)日：2013-12-17
申请号：US13415206
申请日：2012-03-08
申请人： Chiharu Sasaki , Wataru Tamura , Keita Akiyama
发明人： Chiharu Sasaki , Wataru Tamura , Keita Akiyama
IPC分类号： H01L33/60
CPC分类号： H01L33/14 , H01L33/30 , H01L33/38
摘要： There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm−3 to 5×1018 cm−3; a second n-clad having a carrier density of 1×1018 cm−3 to 5×1018 cm−3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 μm; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.
摘要翻译：提供了具有半导体膜的发光元件，该半导体膜包括具有GaInP或GaP的p型电流扩展层; AlInP的第一个p-clad; AlGaInP的第二p包层; 包括GaInP或AlGaInP的有源层; 载体密度为1×1018cm-3至5×1018cm-3的第一n型包层; 具有载流子密度为1×1018cm-3至5×1018cm-3的第二n型包层; 其中，第一p型覆层在整个p型覆层中的厚度比例为50％〜80％。整个n包层的厚度等于或大于2μm; 整个n包层中的第一n包层的厚度比例等于或大于80％; 并且第二n包层的厚度等于或大于100nm。

5. 发明申请

US20120228658A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
标题翻译：半导体发光元件和制造半导体发光元件的方法
公开(公告)号：US20120228658A1
公开(公告)日：2012-09-13
申请号：US13415206
申请日：2012-03-08
申请人： Chiharu SASAKI , Wataru TAMURA , Keita AKIYAMA
发明人： Chiharu SASAKI , Wataru TAMURA , Keita AKIYAMA
IPC分类号： H01L33/60
CPC分类号： H01L33/14 , H01L33/30 , H01L33/38
摘要： There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm−3 to 5×1018 cm−3; a second n-clad having a carrier density of 1×1018 cm−3 to 5×1018 cm−3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 μm; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.
摘要翻译：提供了具有半导体膜的发光元件，该半导体膜包括具有GaInP或GaP的p型电流扩展层; AlInP的第一个p-clad; AlGaInP的第二p包层; 包括GaInP或AlGaInP的有源层; 载体密度为1×1018cm-3至5×1018cm-3的第一n型包层; 具有载流子密度为1×1018cm-3至5×1018cm-3的第二n型包层; 其中，第一p型覆层在整个p型覆层中的厚度比例为50％〜80％。整个n包层的厚度等于或大于2μm; 整个n包层中的第一n包层的厚度比例等于或大于80％; 并且第二n包层的厚度等于或大于100nm。

6. 发明申请

US20110198634A1 SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US20110198634A1
公开(公告)日：2011-08-18
申请号：US13026564
申请日：2011-02-14
申请人： Chiharu SASAKI , Wataru Tamura , Keita Akiyama
发明人： Chiharu SASAKI , Wataru Tamura , Keita Akiyama
IPC分类号： H01L33/26 , H01L33/02
CPC分类号： H01L33/325 , H01L21/02543 , H01L21/02573 , H01L21/0262 , H01L33/0066
摘要： A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm−3. The active layer is made of (AlyGa1-y)xIn1-xP (0
摘要翻译：具有高发光效率和高击穿电压的半导体发光装置以及批次之间降低的击穿电压变化。半导体发光装置包括第一覆盖层和第二覆盖层。第二覆盖层的平均掺杂剂浓度低于第一覆盖层的平均掺杂剂浓度。发光装置还包括平均掺杂剂浓度为2×1016至4×1016cm-3的有源层。有源层由（AlyGa1-y）xIn1-xP（0

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