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1. 发明授权

US5866094A Method of feeding dopant for continuously-charged method and a dopant composition 失效
标题翻译：供给掺杂剂用于连续充电方法和掺杂剂组合物的方法
公开(公告)号：US5866094A
公开(公告)日：1999-02-02
申请号：US931997
申请日：1997-09-17
申请人： Keishi Niikura
发明人： Keishi Niikura
IPC分类号： C30B15/02 , C30B15/04 , C30B29/06 , H01L21/208
CPC分类号： C30B15/02 , C30B15/04 , Y10S117/912 , Y10S252/95
摘要： The object of the present invention affords a method of feeding dopant and a dopant composition used therein for easily preparing single crystals having a desired doping concentration during semiconductor substrate fabrication.In accordance with the present invention, a water solution containing oxides of the dopant is first added to the liquid containing colloidal silica. The colloidal silica can adsorb the oxides of the dopant to form a dopant composition. Around rod-shaped polysilicon, that is polysilicon rod, the dopant composition is discontinuously coated on the periphery of the polysilicon rods spaced at constant intervals and then dried. When the polysilicon rods are melted in an apparatus for manufacturing single crystals by a heater, dopant is protected by the glassed silica without evaporation. Accordingly, the dopant can be provided at a predetermined concentration to sustain the grown single crystals having a doping concentration as required.
摘要翻译：本发明的目的是提供一种在半导体衬底制造期间使掺杂剂和掺杂剂组合物用于容易地制备具有所需掺杂浓度的单晶的方法。根据本发明，首先将含有掺杂剂氧化物的水溶液加入到含有胶体二氧化硅的液体中。胶体二氧化硅可以吸附掺杂剂的氧化物以形成掺杂剂组合物。在棒状多晶硅（即多晶硅棒）周围，掺杂剂组合物不连续地涂覆在多晶硅棒的周边上，间隔一定的间隔然后干燥。当多晶硅棒在用于通过加热器制造单晶的装置中熔化时，掺杂剂被玻璃状二氧化硅保护而不蒸发。因此，可以以预定浓度提供掺杂剂，以维持根据需要具有掺杂浓度的生长单晶。

2. 发明授权

US5700321A Method of feeding a dopant in a continuously charging method 失效
标题翻译：以连续充电方式供给掺杂剂的方法
公开(公告)号：US5700321A
公开(公告)日：1997-12-23
申请号：US687690
申请日：1996-07-26
申请人： Keishi Niikura
发明人： Keishi Niikura
IPC分类号： C30B15/02 , C30B15/04 , C30B29/06 , H01L21/208
CPC分类号： C30B15/02 , C30B15/04 , Y10S117/912 , Y10S252/95
摘要： The object of the present invention affords a method of feeding dopant and a dopant composition used therein for easily preparing single crystals having a desired doping concentration during semiconductor substrate fabrication. In accordance with the present invention, a water solution containing oxides of the dopant is first added to the liquid containing colloidal silica. The colloidal silica can adsorb the oxides of the dopant to form a dopant composition. Around rod-shaped polysilicon, that is polysilicon rod, the dopant composition is discontinuously coated on the periphery of the polysilicon rods spaced at constant intervals and then dried. When the polysilicon rods are melted in an apparatus for manufacturing single crystals by a heater, dopant is protected by the glassed silica without evaporation. Accordingly, the dopant can be provided at a predetermined concentration to sustain the grown single crystals having a doping concentration as required.
摘要翻译：本发明的目的是提供一种在半导体衬底制造期间使掺杂剂和掺杂剂组合物用于容易地制备具有所需掺杂浓度的单晶的方法。根据本发明，首先将含有掺杂剂氧化物的水溶液加入到含有胶体二氧化硅的液体中。胶体二氧化硅可以吸附掺杂剂的氧化物以形成掺杂剂组合物。在棒状多晶硅（即多晶硅棒）周围，掺杂剂组合物不连续地涂覆在多晶硅棒的周边上，间隔一定间隔然后干燥。当多晶硅棒在用于通过加热器制造单晶的装置中熔化时，掺杂剂被玻璃状二氧化硅保护而不蒸发。因此，可以以预定浓度提供掺杂剂，以维持根据需要具有掺杂浓度的生长单晶。

3. 发明授权

US5427056A Apparatus and method for producing single crystal 失效
标题翻译：单晶制造装置及方法
公开(公告)号：US5427056A
公开(公告)日：1995-06-27
申请号：US39206
申请日：1993-04-06
申请人： Masato Imai , Hiroyuki Noda , Yutaka Shiraishi , Keishi Niikura , Shoei Kurosaka
发明人： Masato Imai , Hiroyuki Noda , Yutaka Shiraishi , Keishi Niikura , Shoei Kurosaka
IPC分类号： C30B15/02 , C30B35/00
CPC分类号： C30B15/02 , Y10T117/1056
摘要： The present invention employs the construction wherein a resistor heater is disposed inside a protective cylinder whose tip is open to a molten liquid packing zone of a crucible inside a pulling apparatus so that the resistor heater is above the tip of a lower portion and temperature setting can be made so as to be capable of fusing a starting material. Since the tip of the protective cylinder is positioned inside the molten liquid at the time of pulling of a single crystal, the gaseous phase portion inside the protective cylinder and the gaseous phase portion inside the pulling apparatus are separated apart by the molten liquid and are independent of each other and a starting material polycrystal rod loaded into the protective cylinder can be supplied to the molten liquid surface inside the crucible while being molten at the lower part of the protective cylinder by the resistor heater. In this manner, the single crystal whose impurity concentration is substantially uniform in the longitudinal direction can be grown continuously.
摘要翻译： PCT No.PCT / JP90 / 01341 Sec。 371日期：1993年4月6日 102（e）日期1993年4月6日PCT 1990年10月18日PCT PCT。公开号WO92 / 07119 日本1992年04月30日。本发明采用这样的结构，其中电阻加热器设置在保护筒内部，其保护筒的尖端与拉制装置内的坩埚的熔融液体填充区开口，使得电阻器加热器在可以进行下部和温度设定以使起始材料熔融。由于在拉制单晶时保护筒的尖端位于熔融液体内部，所以保护筒内部的气相部分和拉动装置内部的气相部分被熔融液分离，并且是独立的并且通过电阻加热器在保护筒的下部熔融时，可以将加载到保护筒中的原料多晶棒供给到坩埚内部的熔融液面。以这种方式，可以连续生长杂质浓度在纵向方向上基本均匀的单晶。

4. 发明授权

US5488923A Method for producing single crystal 失效
标题翻译：单晶生产方法
公开(公告)号：US5488923A
公开(公告)日：1996-02-06
申请号：US399558
申请日：1995-03-07
申请人： Masato Imai , Hiroyuki Noda , Yutaka Shiraishi , Keishi Niikura , Shoei Kurosaka
发明人： Masato Imai , Hiroyuki Noda , Yutaka Shiraishi , Keishi Niikura , Shoei Kurosaka
IPC分类号： C30B15/02 , C30B29/06 , H01L21/208 , C30B15/04
CPC分类号： C30B15/02
摘要： The present invention employs the construction wherein a resistor heater is disposed inside a protective cylinder whose tip is open to a molten liquid packing zone of a crucible inside a pulling apparatus so that the resistor heater is above the tip of a lower portion and temperature setting can be made so as to be capable of fusing a starting material. Since the tip of the protective cylinder is positioned inside the molten liquid at the time of pulling of a single crystal, the gaseous phase portion inside the protective cylinder and the gaseous phase portion inside the pulling apparatus are separated apart by the molten liquid and are independent of each other and a starting material polycrystal rod loaded into the protective cylinder can be supplied to the molten liquid surface inside the crucible while being molten at the lower part of the protective cylinder by the resistor heater. In this manner, the single crystal whose impurity concentration is substantially uniform in the longitudinal direction can be grown continuously.
摘要翻译：本发明采用这样一种结构，其中电阻器加热器设置在保护筒内部，其顶端与拉制装置内的坩埚的熔融液体包装区域打开，使得电阻器加热器在下部的尖端上方，并且温度设定可以使其能够熔化起始材料。由于在拉制单晶时保护筒的尖端位于熔融液体内部，所以保护筒内部的气相部分和拉动装置内部的气相部分被熔融液体分开，并且是独立的并且通过电阻加热器在保护筒的下部熔融时，可以将加载到保护筒中的原料多晶棒供给到坩埚内的熔融液面。以这种方式，可以连续生长杂质浓度在纵向方向上基本均匀的单晶。

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