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1. 发明授权

US5694184A Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US5694184A
公开(公告)日：1997-12-02
申请号：US689147
申请日：1996-07-30
申请人： Keisaku Yamada , Masami Kakinoki
发明人： Keisaku Yamada , Masami Kakinoki
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , H01L27/12 , H01L29/786 , G02F1/1333
CPC分类号： G02F1/136286 , H01L27/12
摘要： A liquid crystal display device including, a first substrate, a second substrate spaced apart from and facing to the first substrate, and provided with a counter electrode, and a liquid crystal composition layer hermetically filled in between the first substrate and the second substrate, wherein a switching element and a transparent pixel electrode connected to the switching element are formed on the first substrate, and the switching element comprises an active layer formed of either polycrystalline silicon or amorphous silicon, an insulating layer containing silicon which is formed on the active layer and provided with an opening, and a wiring electrically connected via the opening with the active layer and formed the insulating layer. The wiring is formed of an alloy comprising 0.1 to 10 mol % of a metal which is capable of reducing the insulating layer containing silicon and 90 mol % or more of copper.
摘要翻译：一种液晶显示装置，包括：第一基板，与第一基板间隔开并面向第一基板的第二基板，并设置有对电极;以及气密填充在第一基板和第二基板之间的液晶组合物层，其中，连接到开关元件的开关元件和透明像素电极形成在第一基板上，并且开关元件包括由多晶硅或非晶硅形成的有源层，形成在有源层上的含硅的绝缘层和设置有开口，以及经由开口与有源层电连接并形成绝缘层的布线。布线由含有0.1〜10摩尔％的能够还原含有硅的绝缘层和90摩尔％以上的铜的金属的合金构成。

2. 发明授权

US06506675B1 Copper film selective formation method 失效
标题翻译：铜膜选择性形成法
公开(公告)号：US06506675B1
公开(公告)日：2003-01-14
申请号：US09612237
申请日：2000-07-07
申请人： Kayoko Oomiya , Keiji Suzuki , Keisaku Yamada
发明人： Kayoko Oomiya , Keiji Suzuki , Keisaku Yamada
IPC分类号： H01L2144
CPC分类号： H01L21/28562 , H01L21/76879
摘要： Disclosed is a copper film selective formation method capable of reducing the material cost by selectively depositing copper in a necessary region of an undercoat film made of an arbitrary material such as a metal or an insulating material. This copper film selective formation method includes the steps of forming a thin film of a silane coupling agent or a surfactant on an undercoat film on a substrate, making a prospective copper film region of the thin film hydrophilic, and selectively forming a copper film in the hydrophilic prospective copper film region of the undercoat film by CVD of copper.
摘要翻译：公开了一种铜膜选择形成方法，其能够通过在由诸如金属或绝缘材料的任意材料制成的底涂层的必要区域中选择性地沉积铜来降低材料成本。该铜膜选择形成方法包括在基板上的底涂层上形成硅烷偶联剂或表面活性剂的薄膜的步骤，使得薄膜的预期铜膜区域亲水，并且在通过铜的CVD法，底涂层的亲水性前瞻性铜膜区域。

3. 发明授权

US6066571A Method of preparing semiconductor surface 失效
标题翻译：制备半导体表面的方法
公开(公告)号：US6066571A
公开(公告)日：2000-05-23
申请号：US4612
申请日：1998-01-08
申请人： Koji Usuda , Keisaku Yamada
发明人： Koji Usuda , Keisaku Yamada
IPC分类号： H01L21/306 , H01L21/302
CPC分类号： H01L21/02052
摘要： A method of preparing a semiconductor work surface comprises the steps of forming an Si monocrystaline substrate including a semiconductor work surface, removing by wet-etching a silicon oxide film formed on the work surface, using HF solution, and washing the work surface by pure water, serving as a washing liquid, of a dissolved oxygen concentration of 500 ppb or lower. The work surface is made of monocrystal and has an orientation a certain amount off the (001) plane. The certain amount is set such that an axis of the work surface has a component inclined with an angle of from 1.degree. to 5.degree. from the [001] direction to a direction. The washing liquid of pure water has a property of etching the Si monocrystal, such that a single or a plurality of surfaces, including the (111) plane, can be preferentially exposed.
摘要翻译：一种制备半导体工作表面的方法包括以下步骤：形成包括半导体工作表面的Si单晶衬底，通过使用HF溶液湿法蚀刻形成在工作表面上的氧化硅膜，并用纯水洗涤工作表面作为洗涤液，溶解氧浓度为500ppb以下。工作表面由单晶制成，并且具有一定的离开（001）平面的方向。一定量被设定为使得工作表面的轴线具有从[001]方向到<010方向倾斜角度为1°至5°的部件。纯水的洗涤液具有蚀刻Si单晶的性质，使得包括（111）面的单个或多个表面可以优先暴露。

4. 发明授权

US4791074A Method of manufacturing a semiconductor apparatus 失效
标题翻译：制造半导体装置的方法
公开(公告)号：US4791074A
公开(公告)日：1988-12-13
申请号：US073473
申请日：1987-07-15
申请人： Yoshitaka Tsunashima , Keisaku Yamada , Takako Kashio
发明人： Yoshitaka Tsunashima , Keisaku Yamada , Takako Kashio
IPC分类号： H01L21/225 , H01L21/385
CPC分类号： H01L21/2254 , Y10S148/158
摘要： According to the present invention, a method of manufacturing a semiconductor apparatus is provided which comprises the steps of (a) depositing a boron layer on a silicon substrate, and (b) thermally diffusing boron from said boron layer into said silicon substrate. The present invention, which is characteristically based on the solid phase diffusion process, enables even a thin layer to be deposited. Further, unlike the ion implantation process, the present invention enables an impurity to be uniformly diffused even into an inclined plane. Unlike the case where boron-containing glass is used as a diffusion source, the invention enables a sufficient amount of boron to be diffused even at a temperature lower than 1000.degree. C.
摘要翻译：根据本发明，提供一种制造半导体器件的方法，其包括以下步骤：（a）在硅衬底上沉积硼层，和（b）将硼从所述硼层热扩散到所述硅衬底中。本发明特征在于基于固相扩散工艺，甚至能够沉积薄层。此外，与离子注入工艺不同，本发明使得杂质均匀均匀地扩散到倾斜平面中。与使用含硼玻璃作为扩散源的情况不同，本发明即使在低于1000℃的温度下也能够使足量的硼扩散。

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