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1. 发明申请

US20060152306A1 Dielectric resonator, dielectric resonator frequency adjusting method, and dielectric resonator integrated circuit 有权
标题翻译：介质谐振器，介质谐振器频率调节方法和介质谐振器集成电路
公开(公告)号：US20060152306A1
公开(公告)日：2006-07-13
申请号：US10546587
申请日：2004-02-23
申请人： Masaharu Ito , Kenichi Maruhashi , Shuya Kishimoto , Keiich Ohata
发明人： Masaharu Ito , Kenichi Maruhashi , Shuya Kishimoto , Keiich Ohata
IPC分类号： H01P7/10
CPC分类号： H01P7/00 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16227 , H01L2924/00014 , H01P7/10 , H03B5/1876 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： An oscillator comprising a dielectric resonator (DR) has a high controllability and reproducibility of coupling between the dielectric resonator (DR) and an oscillation circuit, and an integrated circuit is reduced in size. The dielectric resonator (DR) (1) is composed of a dielectric substrate (2), grounding conductive layers (3a, 3b) formed on both sides of the dielectric substrate (2), and via holes (4a) for electrical connection between the conductive layers. A coupling element (7a) composed of a slot (5a) provided in the central portion of the grounding conductive layer (3a) and a patch (6a) surrounded by the slot (5a) is coupled to the dielectric resonator (DR) (1). The patch (6a) is connected to a transmission line (13a) on an oscillation circuit (9) through a bump (8). The transmission line (13a) is connected to the ground through a termination resistor (15a). On the oscillation circuit MMIC (9), the transmission line (13a) is connected to the gate of a transistor FET (14) A capacitive transmission line (13a) for positive feedback is connected to the transistor FET (14). The output of the transistor FET (14) is connected to a transmission line (13c) for output through a matching circuit (16). The transmission line (13c) is bump-connected to a coplanar line (12a) composed of a signal conductive layer (11a) formed on an edge of the dielectric resonator (DR) (1) and the grounding conductive layer (3a).
摘要翻译：包括介质谐振器（DR）的振荡器具有在介质谐振器（DR）和振荡电路之间的耦合的高可控性和再现性，并且集成电路的尺寸减小。介质谐振器（DR）（1）由电介质基片（2），形成在电介质基片（2）的两侧的接地导电层（3a，3b）和用于电气的通孔导电层之间的连接。由设置在接地导电层（3a）的中心部分的槽（5a）和由槽（5a）围绕的贴片（6a）组成的耦合元件（7a）耦合到介质谐振器（DR）（1）。贴片（6a）通过凸块（8）连接到振荡电路（9）上的传输线（13a）。传输线路（13a）通过终端电阻器（15A）连接到地面。在振荡电路MMIC（9）上，传输线（13a）连接到晶体管FET（14）的栅极。用于正反馈的电容传输线（13a）连接到晶体管FET（14）。晶体管FET（14）的输出端通过匹配电路（16）连接到传输线路（13c）以进行输出。传输线（13c）凸起连接到由形成在介质谐振器（DR）（1）的边缘上的信号导电层（11a）和接地导电层（3）构成的共面线（12a）一个）。

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