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1. 发明授权

US5843391A Method of manufacturing silicon sulfide 失效
标题翻译：硫化硅的制造方法
公开(公告)号：US5843391A
公开(公告)日：1998-12-01
申请号：US839677
申请日：1997-04-15
申请人： Kazutomi Yamamoto , Nobuhiko Ikeda
发明人： Kazutomi Yamamoto , Nobuhiko Ikeda
IPC分类号： C01B17/20 , C01B33/00 , C01B17/00
CPC分类号： C01B33/00 , Y10S423/12
摘要： Silicon sulfide is manufactured from the fine powder of silicon having a particle size in the range of 60 to 100.mu., covered thoroughly with sulfur at lower temperature less than 700.degree. C. in vacuum. In order to produce the silicon sulfide, silicon should be ground in a non-oxidizing atmosphere to prevent the formation of a silicon oxide layer that remains in the product and degrades the purity of the product. The silicon powder is dispersed sufficiently in the molten sulfur. At this time, the quantity of added sulfur needs more than 1.1 times in comparison with the stoichiometric quantity of silicon sulfide. All surfaces of silicon powder should be covered with sulfur to avoid sintering between silicon particles in the whole process of the reaction.
摘要翻译：硫化硅由粒度在60-100微米范围内的硅微粉制成，在真空中低于700℃的较低温度下用硫彻底覆盖。为了生产硫化硅，应在非氧化性气氛中研磨硅，以防止残留在产品中的氧化硅层的形成并降低产品的纯度。硅粉充分分散在熔融硫中。此时，与硫化硅的化学计量量相比，添加硫的量需要1.1倍以上。硅粉的所有表面均应用硫覆盖，以避免整个反应过程中硅颗粒之间的烧结。

2. 发明授权

US5958281A Lithium ion-conductive solid electrolyte and method for producing the same 失效
标题翻译：锂离子导电固体电解质及其制造方法
公开(公告)号：US5958281A
公开(公告)日：1999-09-28
申请号：US833208
申请日：1997-04-14
申请人： Kazunori Takada , Kazuya Iwamoto , Shigeo Kondo , Nobuhiko Ikeda , Kazutomi Yamamoto , Toshikatsu Uematsu
发明人： Kazunori Takada , Kazuya Iwamoto , Shigeo Kondo , Nobuhiko Ikeda , Kazutomi Yamamoto , Toshikatsu Uematsu
IPC分类号： C01B17/22 , C01B33/00 , H01B1/06 , H01M6/18 , H01M10/0562 , H01M4/36
CPC分类号： H01M6/18 , C01B17/22 , C01B33/00 , C01P2006/40 , H01M2300/0068
摘要： A method for producing an electrochemically advantageous lithium ion-conductive solid electrolyte with high ionic conductivity, low electronic conduction and electrochemical stability is disclosed. The method comprises the steps of synthesizing lithium sulfide by reacting lithium hydroxide with a gaseous sulfur source at a temperature of not less than 130.degree. C. and not more than 445.degree. C., thermally melting plural compounds containing at least silicon sulfide and the synthesized lithium sulfide, and cooling the molten mixture. The silicon sulfide is synthesized by the steps of adding a silicon powder to molten sulfur while stirring to disperse the silicon powder in the molten sulfur and heating the silicon powder-dispersed sulfur in a reaction chamber under reduced pressure.
摘要翻译：公开了一种制备具有高离子导电性，低电子传导性和电化学稳定性的电化学有利的锂离子传导性固体电解质的方法。该方法包括以下步骤：在不低于130℃且不高于445℃的温度下，使氢氧化锂与气态硫源反应合成硫化锂，将至少含有硫化硅的多种化合物热合并合成硫化锂，并冷却熔融混合物。硫化硅通过在搅拌下将硅粉加入熔融硫中以将硅粉分散在熔融硫中并在减压下加热反应室中的硅粉分散硫的步骤合成。

3. 发明申请

US20060231174A1 Method for producing high-strength superplastic material 审中-公开
标题翻译：高强度超塑性材料的制造方法
公开(公告)号：US20060231174A1
公开(公告)日：2006-10-19
申请号：US10553882
申请日：2004-05-28
申请人： Kazutomi Yamamoto
发明人： Kazutomi Yamamoto
IPC分类号： C21D9/00 , C22F1/06
CPC分类号： C22F1/06 , C22F3/00
摘要： Provided is a method for producing a high-strength superplastic material which enables a high-strength superplastic material having a metal structure formed from fine grains to be easily obtained. After the application of an ultrasonic wave to a metal material, this metal material is subjected to a heating treatment at a temperature obtained by multiplying a melting point of the material represented by absolute temperature by 0.35 to 0.6. The most suitable metal material is a high damping metal material having a specific damping capacity of not less than 10% and, in particular, Mg or an Mg alloy.
摘要翻译：提供一种能够容易地获得具有由细晶粒形成的金属结构的高强度超塑性材料的高强度超塑性材料的制造方法。在向金属材料施加超声波之后，将该金属材料在以绝对温度表示的材料的熔点乘以0.35〜0.6而获得的温度下进行加热处理。最合适的金属材料是具有不小于10％的比阻尼能力的高阻尼金属材料，特别是Mg或Mg合金。

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