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1. 发明授权

US06448618B1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06448618B1
公开(公告)日：2002-09-10
申请号：US09640707
申请日：2000-08-18
申请人： Satoshi Inaba , Tohru Ozaki , Yusuke Kohyama , Kazumesa Sunouchi
发明人： Satoshi Inaba , Tohru Ozaki , Yusuke Kohyama , Kazumesa Sunouchi
IPC分类号： H01L27108
CPC分类号： H01L27/10844 , H01L27/105 , H01L27/108 , Y10S257/90
摘要： In a DRAM, a plurality of first MOSFETs are formed in a cell region on a semiconductor substrate based on the minimum design rule, and a first gate side-wall having a side-wall insulation film is formed on the side-wall portion of a first gate electrode of each of the first MOSFETs. At least one second MOSFET is formed in a peripheral circuit region on the semiconductor substrate, and a second gate side-wall having side-wall insulation films is formed on the side-wall portion of a second gate electrode of the second MOSFET. Both the first MOSFETs, which is capable of forming a fine contact hole self-aligned with the first gate electrode, and the second MOSFET, which is capable of sufficiently mitigating the parasitic resistance while suppressing the short channel effect, can be formed on the same substrate.
摘要翻译：在DRAM中，基于最小设计规则，在半导体衬底上的单元区域中形成多个第一MOSFET，并且在侧壁部分上形成具有侧壁绝缘膜的第一栅极侧壁每个第一MOSFET的第一栅电极。在半导体衬底上的外围电路区域中形成至少一个第二MOSFET，并且在第二MOSFET的第二栅电极的侧壁部分上形成具有侧壁绝缘膜的第二栅极侧壁。能够形成与第一栅电极自对准的精细接触孔的第一MOSFET和能够在抑制短沟道效应的同时充分减轻寄生电阻的第二MOSFET同时形成基质。

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