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    • 3. 发明授权
    • Wafer polishing method and apparatus
    • 晶圆抛光方法及装置
    • US08066550B2
    • 2011-11-29
    • US12337145
    • 2008-12-17
    • Daichi HiguchiKazuma Tanaka
    • Daichi HiguchiKazuma Tanaka
    • B24B1/00
    • B24B9/065
    • A wafer polishing method, in which the outer circumferential edge of a polishing member is first cut by a cutting tool fixed to a table base, thereby forming the polishing member into a completely round shape and also positioning the polishing member in a Y direction at a Y-directional reference position of the table base. Thereafter, a polishing unit is once lifted in the condition where the table base remains still at the reference position. Thereafter, the table base is horizontally moved toward a column in the Y direction to thereby position the polishing member in the Y direction so that only a peripheral portion of the wafer is polished by the polishing member. At this time, the horizontal travel of the table base is preliminarily obtained from the Y-directional positional relation between the cutting tool and the wafer held on a chuck table and from the width of the peripheral portion to be polished. Finally, the polishing unit is lowered to make the lower surface of the polishing member into pressure contact with the peripheral portion of the wafer, thus polishing only the peripheral portion.
    • 一种晶片抛光方法,其中抛光构件的外周边缘首先被固定到台座上的切割工具切割,从而将抛光构件形成为完全圆形,并且将抛光构件沿Y方向定位在 表格的Y方向参考位置。 此后,抛光单元在桌面保持静止在基准位置的状态下一次抬起。 此后,台架沿着Y方向水平移动,从而将抛光部件定位在Y方向上,使得只有晶片的周边部分被抛光部件抛光。 此时,预先从切削工具与夹持台上的晶片之间的Y方向的位置关系和待抛光的周边部的宽度获得台座的水平行程。 最后,抛光单元被降低以使抛光构件的下表面与晶片的周边部分压力接触,从而只抛光周边部分。
    • 5. 发明申请
    • WAFER POLISHING METHOD AND APPARATUS
    • 波浪抛光方法和装置
    • US20090176444A1
    • 2009-07-09
    • US12337145
    • 2008-12-17
    • Daichi HiguchiKazuma Tanaka
    • Daichi HiguchiKazuma Tanaka
    • B24B9/06B24B53/00
    • B24B9/065
    • A wafer polishing method, in which the outer circumferential edge of a polishing member is first cut by a cutting tool fixed to a table base, thereby forming the polishing member into a completely round shape and also positioning the polishing member in a Y direction at a Y-directional reference position of the table base. Thereafter, a polishing unit is once lifted in the condition where the table base remains still at the reference position. Thereafter, the table base is horizontally moved toward a column in the Y direction to thereby position the polishing member in the Y direction so that only a peripheral portion of the wafer is polished by the polishing member. At this time, the horizontal travel of the table base is preliminarily obtained from the Y-directional positional relation between the cutting tool and the wafer held on a chuck table and from the width of the peripheral portion to be polished. Finally, the polishing unit is lowered to make the lower surface of the polishing member into pressure contact with the peripheral portion of the wafer, thus polishing only the peripheral portion.
    • 一种晶片抛光方法,其中抛光构件的外周边缘首先被固定到台座上的切割工具切割,从而将抛光构件形成为完全圆形,并且将抛光构件沿Y方向定位在 表格的Y方向参考位置。 此后,抛光单元在桌面保持静止在基准位置的状态下一次抬起。 此后,台架沿着Y方向水平移动,从而将抛光部件定位在Y方向上,使得只有晶片的周边部分被抛光部件抛光。 此时,预先从切削工具与夹持台上的晶片之间的Y方向的位置关系和待抛光的周边部的宽度获得台座的水平行程。 最后,抛光单元被降低以使抛光构件的下表面与晶片的周边部分压力接触,从而只抛光周边部分。