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1. 发明授权

US06853219B2 Charging circuit 有权
标题翻译：充电电路
公开(公告)号：US06853219B2
公开(公告)日：2005-02-08
申请号：US10467453
申请日：2002-12-10
申请人： Katsuyoshi Aihara , Takaaki Nozaki , Ryoji Iwakura
发明人： Katsuyoshi Aihara , Takaaki Nozaki , Ryoji Iwakura
IPC分类号： G04C10/00 , H02J7/35 , H03K5/153 , H02J1/00
CPC分类号： H02J7/35 , G04C10/00 , Y02E10/566
摘要： Charging a storage cell requires the electromotive force exerted at a photogenerating cell in addition to the voltage equal to or higher than the forward on voltage developed at an backflow preventing diode. Therefore, the charging is inefficient. Moreover, the area of the backflow preventing diode must be large in consideration for a current supply from the photogenerating cell at a high intensity of illumination.A charging circuit, constructed using a differential amplifier, which has a power supply therefor separated from another power supply, is used as a direction-of-current detecting circuit that detects the direction of current from a voltage difference between two different power supplies. Consequently, a switch is logically turned on or off depending on whether charging or non-charging is under way. Thus, on voltage to be developed during charging is lowered. Moreover, the size or area of a transistor that acts as a logical circuit is made smaller than that of the backflow preventing diode. Furthermore, the energy of a storage cell included in the charging circuit is hardly consumed in any states.
摘要翻译：对存储单元进行充电除了在防逆流二极管上形成的正向电压以外，还需要施加在光生电池上的电动势。因此，充电效率低下。此外，考虑到来自光生成单元的高照度强度的电流供应，防回流二极管的面积必须大。1，一种使用差分放大器构成的充电电路，其具有与另一个电源分离的电源被用作从两个不同电源之间的电压差检测电流方向的电流检测电路。因此，根据是充电还是不充电，逻辑上开关断开关。因此，在充电期间要开发的电压降低。此外，作为逻辑电路的晶体管的尺寸或面积小于防回流二极管的尺寸或面积。此外，包括在充电电路中的存储单元的能量在任何状态下几乎都不消耗。

2. 发明授权

US06727769B2 Crystal oscillator circuit using CMOSFETs 有权
标题翻译：使用CMOSFET的晶体振荡器电路
公开(公告)号：US06727769B2
公开(公告)日：2004-04-27
申请号：US10157999
申请日：2002-05-31
申请人： Katsuyoshi Aihara , Ryoji Iwakura , Takakazu Yano , Yukio Otaka , Shinichi Komine
发明人： Katsuyoshi Aihara , Ryoji Iwakura , Takakazu Yano , Yukio Otaka , Shinichi Komine
IPC分类号： H03B532
CPC分类号： H03B5/364 , H03B5/06
摘要： A crystal oscillator circuit using CMOSFETs including an oscillator circuit that is constructed of a resonating section and an amplifying section having a CMOSFET, a reference current source circuit for generating a reference current which determines a bias current of the amplifying section, and a control signal generator circuit for controlling the reference current source circuit to make a bias current larger than that in the oscillation status when the oscillator circuit is in the non-oscillation status. As a result, the reference current source circuit constant-current biases the DC bias of the amplifying section without depending on the source voltage. Therefore, it can lower the driving source voltage of the oscillator circuit. Further, only the bias current of the amplifying section is increased during the oscillation starting period of the oscillator circuit, so that the oscillator circuit can provide a stable oscillation with low power, without variations in the source voltage.
摘要翻译：一种使用CMOSFET的晶体振荡器电路，包括由谐振部分和具有CMOSFET的放大部分构成的振荡器电路，用于产生确定放大部分的偏置电流的参考电流的参考电流源电路，以及控制信号发生器用于控制参考电流源电路以在振荡器电路处于非振荡状态时使偏置电流大于振荡状态时的偏置电流。因此，参考电流源电路恒流偏置放大部分的直流偏压而不依赖于源极电压。因此，可以降低振荡电路的驱动源电压。此外，在振荡电路的振荡开始期间，只有放大部分的偏置电流增加，使得振荡器电路能够以低功率提供稳定的振荡，而不会使源极电压发生变化。

3. 发明授权

US5986311A Semiconductor device having recrystallized source/drain regions 失效
标题翻译：具有再结晶源极/漏极区域的半导体器件
公开(公告)号：US5986311A
公开(公告)日：1999-11-16
申请号：US864877
申请日：1997-05-19
申请人： Katsuyoshi Aihara
发明人： Katsuyoshi Aihara
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L29/04 , H01L29/43
CPC分类号： H01L29/66772 , H01L29/78618 , H01L29/78654 , H01L21/2022
摘要： A gate oxide film is formed on a thin-film SOI substrate or on a single crystalline silicon substrate and a gate is formed on the gate oxide film. The surfaces of a single crystalline silicon at diffusion layer regions on opposite sides of the gate are cleaned and an amorphous silicon film is formed thereon and on the side walls of the gate. Impurity ions are implanted in the amorphous silicon film, which is then converted into recrystallized silicon films by annealing. An interlayer insulator film is formed and another annealing is conducted. As a result, impurity ions in the recrystallized silicon films diffuse into the diffusion layer region of the single crystalline silicon and are activated to form a source and a drain.
摘要翻译：在薄膜SOI衬底或单晶硅衬底上形成栅极氧化膜，并且在栅极氧化膜上形成栅极。在栅极的相对侧上的扩散层区域处的单晶硅的表面被清洁，并且在栅极的侧壁上形成非晶硅膜。将杂质离子注入到非晶硅膜中，然后通过退火将其转化成再结晶的硅膜。形成层间绝缘膜，进行另一退火。结果，再结晶硅膜中的杂质离子扩散到单晶硅的扩散层区域，并被激活以形成源极和漏极。

4. 发明授权

US5960268A Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US5960268A
公开(公告)日：1999-09-28
申请号：US190025
申请日：1998-11-12
申请人： Katsuyoshi Aihara
发明人： Katsuyoshi Aihara
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66772 , H01L29/78618 , H01L29/78654 , H01L21/2022
摘要： A gate oxide film is formed on a thin-film SOI substrate or on a single crystalline silicon substrate and a gate is formed on the gate oxide film. The surfaces of a single crystalline silicon at diffusion layer regions on opposite sides of the gate are cleaned and an amorphous silicon film is formed thereon and on the side walls of the gate. Impurity ions are implanted in the amorphous silicon film, which is then converted into recrystallized silicon films by annealing. An interlayer insulator film is formed and another annealing is conducted. As a result, impurity ions in the recrystallized silicon films diffuse into the diffusion layer region of the single crystalline silicon and are activated to form a source and a drain.
摘要翻译：在薄膜SOI衬底或单晶硅衬底上形成栅极氧化膜，并且在栅极氧化膜上形成栅极。在栅极的相对侧上的扩散层区域处的单晶硅的表面被清洁，并且在栅极的侧壁上形成非晶硅膜。将杂质离子注入到非晶硅膜中，然后通过退火将其转化成再结晶的硅膜。形成层间绝缘膜，进行另一退火。结果，再结晶硅膜中的杂质离子扩散到单晶硅的扩散层区域中并被激活以形成源极和漏极。

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