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    • 3. 发明申请
    • EXHAUST GAS TREATMENT SYSTEM
    • 排气处理系统
    • US20090047187A1
    • 2009-02-19
    • US12162092
    • 2007-01-16
    • Katsumasa SuzukiMasaya YamawakiTakayuki Sato
    • Katsumasa SuzukiMasaya YamawakiTakayuki Sato
    • B01D53/68G05B21/00
    • B01D53/46B01D53/323B01D53/346B01D2258/0216B01D2259/818
    • An exhaust gas treatment system, which comprises: an arithmetic processing part wherein the type of gas, the flow rate and the supply time of a gas supplied to a gas-using facility are inputted as parameters, and the type of gas, the flow rate and the supply time of an additive gas is calculated based on these parameters; an additive gas supply part, which supplies an additive gas while controlling the type of gas, the flow rate and the supply time of the additive gas in accordance with indication signals sent from the arithmetic processing part; and a removal part wherein the additive gas is added to an exhaust gas exhausted from the gas-using facility, and a target compound included in the exhaust gas is removed by reacting the additive gas and the target compound included in the exhaust gas.
    • 一种废气处理系统,包括:运算处理部,其输入供给到气体使用设备的气体的气体类型,流量和供给时间作为参数,并且气体的种类,流量 并根据这些参数计算添加气体的供给时间; 添加气体供给部,其根据从运算处理部发送的指示信号,控制添加气体的种类,流量和供给时间,供给添加气体; 以及将添加气体添加到从气体使用设备排出的排气中的除去部,通过使添加气体和废气中包含的目标化合物反应来除去废气中包含的目标化合物。
    • 5. 发明授权
    • CVD apparatus equipped with moisture monitoring
    • CVD装置,其清洗方法,用于判断半导体制造装置的维护时间的方法,水分监测装置和配备有其的半导体制造装置
    • US06491758B1
    • 2002-12-10
    • US09651255
    • 2000-08-30
    • Hiroyuki HasegawaTomonori YamaokaHiroshi MasusakiTakayuki SatouKatsumasa SuzukiHiroki Tokunaga
    • Hiroyuki HasegawaTomonori YamaokaHiroshi MasusakiTakayuki SatouKatsumasa SuzukiHiroki Tokunaga
    • C23C1600
    • C23C16/4408C23C16/4401C23C16/52
    • A CVD apparatus is able to efficiently perform purging treatment after maintenance by using for the purge gas a mixed gas of a high thermal conductivity and an inert gas. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times, the moisture concentration in reaction chamber is measured with a moisture meter connected to the reaction chamber when performing a corrosive gas treatment, and maintenance times are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas while preventing obstruction of piping in a moisture monitoring apparatus, a moisture monitoring apparatus, including a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is equipped with a pipe beating mechanism.
    • CVD装置能够通过对清洗气体使用高导热性和惰性气体的混合气体而进行清洗处理。 在半导体膜形成之前的清洗处理通过重复抽真空和引入惰性气体进行多次。 此外,为了判断合适的维护时间,在进行腐蚀性气体处理时,用与反应室连接的水分计测定反应室中的水分浓度,并且根据腐蚀性气体中的水分浓度的变化来确定维护时间 治疗重复进行。 此外,为了在防止水分监测装置中的管道阻塞的同时测量腐蚀性气体的水分,包括管道的水分监测装置,其一端连接到腐蚀性气体流入的反应室中,并且水分 连接到测量从反应室引入的腐蚀性气体中的水分的另一端的仪表配备有管道打浆机构。
    • 6. 发明授权
    • Laser spectroscopy system
    • 激光光谱系统
    • US06483589B1
    • 2002-11-19
    • US09611260
    • 2000-07-06
    • Katsumasa SuzukiHiroshi MasusakiTakayuki Satoh
    • Katsumasa SuzukiHiroshi MasusakiTakayuki Satoh
    • G01N2131
    • G01N21/3504G01N21/39G01N2021/399
    • In order to provide a laser spectroscopy system of simple construction and free of the effect of the fringe noise and to provide a laser spectroscopy system in which a reference cell is efficiently installed with minimum cost and space, there is disclosed a laser spectroscopy system comprising: a tunable laser diode source for generating a laser beam used for spectroscopic analysis; a sample cell where a sample gas is introduced; a first photo detector for measuring an intensity of a laser beam transmitted through the sample cell and having a beam receiving face; a beam splitter for splitting a portion of the laser beam from the laser source; and a second photo detector for measuring an intensity of a splitted laser beam from the beam splitter and having a beam receiving face, wherein the at least one of beam receiving faces is tilted to be at a predetermined angle from an axis of laser beam.
    • 为了提供一种结构简单且不受边缘噪声影响的激光光谱系统,并且提供一种激光光谱系统,其包括以下步骤:激光光谱系统,该系统包括: 用于产生用于光谱分析的激光束的可调激光二极管源; 导入样品气体的样品池; 第一光电检测器,用于测量透射通过样品池并具有光束接收面的激光束的强度; 分束器,用于分离来自激光源的激光束的一部分; 以及第二光电检测器,用于测量来自分束器的分裂激光束的强度并具有光束接收面,其中所述光束接收面中的至少一个倾斜到与激光束轴成预定角度。
    • 7. 发明授权
    • Method of purging CVD apparatus and method for judging maintenance of times of semiconductor production apparatuses
    • 吹扫CVD装置的方法以及用于判断半导体制造装置的维护时间的方法
    • US06887721B2
    • 2005-05-03
    • US10021259
    • 2001-12-19
    • Hiroyuki HasegawaTomonori YamaokaYoshio IshiharaHiroshi MasusakiTakayuki SatouKatsumasa SuzukiHiroki Tokunaga
    • Hiroyuki HasegawaTomonori YamaokaYoshio IshiharaHiroshi MasusakiTakayuki SatouKatsumasa SuzukiHiroki Tokunaga
    • H01L21/00C23C16/44C23C16/52H01L21/205H01L21/66
    • C23C16/4408C23C16/4401C23C16/52
    • The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times of semiconductor production apparatuses that perform corrosive gas treatment in a reaction chamber, the moisture concentration in reaction chamber is measured with moisture meter connected to the reaction chamber when performing the corrosive gas treatment, and maintenance times of the semiconductor production apparatus are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas during processing while preventing obstruction of piping in a moisture monitoring apparatus and semiconductor production apparatus equipped therewith, a moisture monitoring apparatus, which is equipped with a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end of that pipe which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is at least equipped with pipe heating mechanism that heats the pipe.
    • 本发明公开了一种CVD装置,其能够在维护后能够有效地进行清洗处理,在维护后的加热流动清洗处理中,使用具有高导热性的气体和惰性气体的混合气体进行吹扫,以进行启动 的CVD装置,同时减少清洗处理所需的时间。 在半导体膜形成之前的清洗处理通过重复抽真空和引入惰性气体进行多次。 此外,为了判断在反应室中进行腐蚀性气体处理的半导体制造装置的合适的维护时间,在进行腐蚀性气体处理时,在与反应室连接的水分计测量反应室中的水分浓度,并进行维护时间 根据重复进行腐蚀性气体处理时的水分浓度的变化来确定半导体制造装置。 此外,为了在加工过程中测量腐蚀性气体的湿度,同时防止水分监测装置和配备的半导体制造装置中的管道的阻塞,配备有管道的水分监测装置,其一端连接到 腐蚀性气体流入的反应室和与该管的另一端连接的湿度计,其测量从反应室引入的腐蚀性气体中含有的水分,至少配备有加热管道的管道加热机构。