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1. 发明申请

US20110151618A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110151618A1
公开(公告)日：2011-06-23
申请号：US12968331
申请日：2010-12-15
申请人： Shunpei YAMAZAKI , Hotaka MARUYAMA , Yoshiaki OIKAWA , Katsuaki TOCHIBAYASHI
发明人： Shunpei YAMAZAKI , Hotaka MARUYAMA , Yoshiaki OIKAWA , Katsuaki TOCHIBAYASHI
IPC分类号： H01L21/34
CPC分类号： H01L27/1225 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L21/28185 , H01L27/1229 , H01L29/045 , H01L29/66969 , H01L29/7869
摘要： An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical application of a large display device, a high-performance semiconductor device, etc. By first heat treatment, a first oxide semiconductor layer is crystallized. A second oxide semiconductor layer is formed over the first oxide semiconductor layer. By second heat treatment, an oxide semiconductor layer including a crystal region having the c-axis oriented substantially perpendicular to a surface is efficiently formed and oxygen vacancies are efficiently filled. An oxide insulating layer is formed over and in contact with the oxide semiconductor layer. By third heat treatment, oxygen is supplied again to the oxide semiconductor layer. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer. By fourth heat treatment, hydrogen is supplied at least to an interface between the second oxide semiconductor layer and the oxide insulating layer.
摘要翻译：形成具有优异结晶度的氧化物半导体层，以便制造具有优异的电特性的晶体管，用于实际应用大型显示器件，高性能半导体器件等。通过第一热处理，第一氧化物半导体层被结晶。在第一氧化物半导体层上形成第二氧化物半导体层。通过第二热处理，有效地形成包括具有取向为基本上垂直于表面的c轴的晶体区域的氧化物半导体层，并且有效地填充氧空位。氧化物绝缘层形成在氧化物半导体层上并与氧化物半导体层接触。通过第三次热处理，再次向氧化物半导体层供给氧。在氧化物绝缘层上形成含有氢的氮化物绝缘层。通过第四热处理，至少向第二氧化物半导体层和氧化物绝缘层之间的界面供应氢。

2. 发明授权

US08664036B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08664036B2
公开(公告)日：2014-03-04
申请号：US12968331
申请日：2010-12-15
申请人： Shunpei Yamazaki , Hotaka Maruyama , Yoshiaki Oikawa , Katsuaki Tochibayashi
发明人： Shunpei Yamazaki , Hotaka Maruyama , Yoshiaki Oikawa , Katsuaki Tochibayashi
IPC分类号： H01L21/00
CPC分类号： H01L27/1225 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L21/28185 , H01L27/1229 , H01L29/045 , H01L29/66969 , H01L29/7869
摘要： An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical application of a large display device, a high-performance semiconductor device, etc. By first heat treatment, a first oxide semiconductor layer is crystallized. A second oxide semiconductor layer is formed over the first oxide semiconductor layer. By second heat treatment, an oxide semiconductor layer including a crystal region having the c-axis oriented substantially perpendicular to a surface is efficiently formed and oxygen vacancies are efficiently filled. An oxide insulating layer is formed over and in contact with the oxide semiconductor layer. By third heat treatment, oxygen is supplied again to the oxide semiconductor layer. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer. By fourth heat treatment, hydrogen is supplied at least to an interface between the second oxide semiconductor layer and the oxide insulating layer.
摘要翻译：形成具有优异结晶度的氧化物半导体层，以便能够制造具有优异电特性的晶体管，用于实际应用大型显示装置，高性能半导体器件等。通过第一热处理，第一氧化物半导体层结晶。在第一氧化物半导体层上形成第二氧化物半导体层。通过第二热处理，有效地形成包括具有取向为基本上垂直于表面的c轴的晶体区域的氧化物半导体层，并且有效地填充氧空位。氧化物绝缘层形成在氧化物半导体层上并与氧化物半导体层接触。通过第三次热处理，再次向氧化物半导体层供给氧。在氧化物绝缘层上形成含有氢的氮化物绝缘层。通过第四热处理，至少向第二氧化物半导体层和氧化物绝缘层之间的界面供应氢。

3. 发明授权

US08664097B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08664097B2
公开(公告)日：2014-03-04
申请号：US13220761
申请日：2011-08-30
申请人： Masami Jintyou , Yamato Aihara , Katsuaki Tochibayashi , Toru Arakawa
发明人： Masami Jintyou , Yamato Aihara , Katsuaki Tochibayashi , Toru Arakawa
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L29/66969 , H01L21/0237 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/441 , H01L21/47573 , H01L29/045 , H01L29/24 , H01L29/45 , H01L29/66742 , H01L29/78606 , H01L29/7869
摘要： An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.
摘要翻译：本发明的目的是提供一种制造包括高性能和高可靠性晶体管的半导体器件的技术。在氧化物半导体层和导电层之间形成由导电层形成布线层时保护氧化物半导体层的保护导电膜，并且进行具有两个步骤的蚀刻工艺。在第一蚀刻步骤中，在保护导电膜比导电层蚀刻少的条件下进行蚀刻，并且导电层对保护导电膜的蚀刻选择性高。在第二蚀刻步骤中，在保护导电膜比氧化物半导体层更容易蚀刻的条件下进行蚀刻，并且保护性导电膜对氧化物半导体层的蚀刻选择性高。

4. 发明申请

US20120064703A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120064703A1
公开(公告)日：2012-03-15
申请号：US13220761
申请日：2011-08-30
申请人： Masami JINTYOU , Yamato AIHARA , Katsuaki TOCHIBAYASHI , Toru ARAKAWA
发明人： Masami JINTYOU , Yamato AIHARA , Katsuaki TOCHIBAYASHI , Toru ARAKAWA
IPC分类号： H01L21/20
CPC分类号： H01L29/66969 , H01L21/0237 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/441 , H01L21/47573 , H01L29/045 , H01L29/24 , H01L29/45 , H01L29/66742 , H01L29/78606 , H01L29/7869
摘要： An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.
摘要翻译：本发明的目的是提供一种制造包括高性能和高可靠性晶体管的半导体器件的技术。在氧化物半导体层和导电层之间形成由导电层形成布线层时保护氧化物半导体层的保护导电膜，并且进行具有两个步骤的蚀刻工艺。在第一蚀刻步骤中，在保护导电膜比导电层蚀刻少的条件下进行蚀刻，并且导电层对保护导电膜的蚀刻选择性高。在第二蚀刻步骤中，在保护导电膜比氧化物半导体层更容易蚀刻的条件下进行蚀刻，并且保护性导电膜对氧化物半导体层的蚀刻选择性高。

5. 发明申请

US20120001179A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120001179A1
公开(公告)日：2012-01-05
申请号：US13166073
申请日：2011-06-22
申请人： Shunpei YAMAZAKI , Masahiro TAKAHASHI , Takuya HIROHASHI , Katsuaki TOCHIBAYASHI , Yasutaka NAKAZAWA , Masatoshi YOKOYAMA
发明人： Shunpei YAMAZAKI , Masahiro TAKAHASHI , Takuya HIROHASHI , Katsuaki TOCHIBAYASHI , Yasutaka NAKAZAWA , Masatoshi YOKOYAMA
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/45 , H01L29/4908 , H01L29/78606 , H01L29/78693
摘要： It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×1019 atoms/cm3 or lower and the source electrode and the drain electrode include one or more of tungsten, platinum, and molybdenum.
摘要翻译：本发明的目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。一种具有栅极绝缘层的叠层结构的半导体器件; 与所述栅极绝缘层的一个表面接触的第一栅电极; 与所述栅绝缘层的另一表面接触并与所述第一栅电极重叠的氧化物半导体层; 并且提供与氧化物半导体层接触的源电极，漏电极和氧化物绝缘层，其中氧化物半导体层的氮浓度为2×1019原子/ cm3以下，源电极和漏极包括钨，铂和钼中的一种或多种。

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