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1. 发明授权

US08084368B2 Method of forming barrier film 有权
标题翻译：形成阻挡膜的方法
公开(公告)号：US08084368B2
公开(公告)日：2011-12-27
申请号：US12447533
申请日：2007-11-08
申请人： Masanobu Hatanaka , Michio Ishikawa , Kanako Tsumagari
发明人： Masanobu Hatanaka , Michio Ishikawa , Kanako Tsumagari
IPC分类号： H01L21/46
CPC分类号： C23C16/38 , C23C16/30 , C23C16/4554 , C23C16/45555 , C23C16/45565 , H01L21/28562 , H01L21/76843
摘要： A barrier film made of a ZrB2 film is formed by use of a coating apparatus provided with plasma generation means including a coaxial resonant cavity and a microwave supply circuit for exciting the coaxial resonant cavity, the coaxial resonant cavity including spaced apart conductors provided around the periphery of a nonmetallic pipe for reactive gas introduction, the coaxial resonant cavity having an inner height equal to an integer multiple of one-half of the exciting wavelength, the plasma generation means being constructed such that a gas injected from one end of the nonmetallic pipe is excited into a plasma state by a microwave when the gas is in a region of the nonmetallic pipe which is not covered with the conductors and such that the gas in the plasma state is discharged from the other end of the nonmetallic pipe.
摘要翻译：由ZrB2膜制成的阻挡膜通过使用具有等离子体产生装置的涂覆装置形成，所述等离子体产生装置包括同轴谐振腔和用于激发同轴谐振腔的微波供应电路，所述同轴谐振腔包括设置在周边周围的间隔开的导体的用于反应气体引入的非金属管，所述同轴谐振腔的内部高度等于所述激发波长的二分之一的整数倍，所述等离子体产生装置被构造成使得从所述非金属管的一端注入的气体为当气体处于不被导体覆盖的非金属管的区域中并且等离子体状态的气体从非金属管的另一端排放时，通过微波激发成等离子体状态。

2. 发明授权

US08043963B2 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus 有权
标题翻译：半导体器件制造方法和半导体器件制造装置
公开(公告)号：US08043963B2
公开(公告)日：2011-10-25
申请号：US12528811
申请日：2008-02-25
申请人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
发明人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/28556 , C23C16/30 , C23C16/45542 , H01L21/28562 , H01L21/76829 , H01L21/76831 , H01L21/76843 , H01L21/76849 , Y10T29/49146 , Y10T29/49162
摘要： A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer (11) on a semiconductor substrate (2) including an element region (2b), a recess step of forming a recess (12) in the insulation layer (11), a metal layer step of embedding a metal layer (13) in the recess (12), a planarization step of planarizing a surface of the insulation layer (11) and a surface of the metal layer (13) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer (16) containing at least zirconium element and nitrogen element on the surface of the insulation layer (11) and the surface of the metal layer (13) after the planarization step.
摘要翻译：一种用于制造提高金属盖层的可靠性和生产率的半导体器件的方法。该方法包括在包括元件区域（2b）的半导体衬底（2）上叠加绝缘层（11）的绝缘层步骤，在绝缘层（11）中形成凹陷（12）的凹陷步骤，金属在所述凹部（12）中嵌入金属层（13）的层叠工序，使所述绝缘层（11）的表面和所述金属层（13）的表面平坦化的平坦化工序，在平坦化步骤之后，在所述绝缘层（11）的表面和所述金属层（13）的表面上形成至少含有锆元素和氮元素的金属覆盖层（16）的金属覆盖层工序。

3. 发明申请

US20100068880A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 有权
标题翻译：半导体器件制造方法和半导体器件制造设备
公开(公告)号：US20100068880A1
公开(公告)日：2010-03-18
申请号：US12528811
申请日：2008-02-25
申请人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
发明人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
IPC分类号： H01L21/768 , H05K3/10
CPC分类号： H01L21/28556 , C23C16/30 , C23C16/45542 , H01L21/28562 , H01L21/76829 , H01L21/76831 , H01L21/76843 , H01L21/76849 , Y10T29/49146 , Y10T29/49162
摘要： A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer (11) on a semiconductor substrate (2) including an element region (2b), a recess step of forming a recess (12) in the insulation layer (11), a metal layer step of embedding a metal layer (13) in the recess (12), a planarization step of planarizing a surface of the insulation layer (11) and a surface of the metal layer (13) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer (16) containing at least zirconium element and nitrogen element on the surface of the insulation layer (11) and the surface of the metal layer (13) after the planarization step.
摘要翻译：一种用于制造提高金属盖层的可靠性和生产率的半导体器件的方法。该方法包括在包括元件区域（2b）的半导体衬底（2）上叠加绝缘层（11）的绝缘层步骤，在绝缘层（11）中形成凹陷（12）的凹陷步骤，金属在所述凹部（12）中嵌入金属层（13）的层叠工序，使所述绝缘层（11）的表面和所述金属层（13）的表面平坦化的平坦化工序，在平坦化步骤之后，在所述绝缘层（11）的表面和所述金属层（13）的表面上形成至少含有锆元素和氮元素的金属覆盖层（16）的金属覆盖层工序。

4. 发明申请

US20100068891A1 METHOD OF FORMING BARRIER FILM 有权
标题翻译：形成障碍膜的方法
公开(公告)号：US20100068891A1
公开(公告)日：2010-03-18
申请号：US12447533
申请日：2007-11-08
申请人： Masanobu Hatanaka , Michio Ishikawa , Kanako Tsumagari
发明人： Masanobu Hatanaka , Michio Ishikawa , Kanako Tsumagari
IPC分类号： H01L21/46
CPC分类号： C23C16/38 , C23C16/30 , C23C16/4554 , C23C16/45555 , C23C16/45565 , H01L21/28562 , H01L21/76843
摘要： A barrier film made of a ZrB2 film is formed by use of a coating apparatus provided with plasma generation means including a coaxial resonant cavity and a microwave supply circuit for exciting the coaxial resonant cavity, the coaxial resonant cavity including spaced apart conductors provided around the periphery of a nonmetallic pipe for reactive gas introduction, the coaxial resonant cavity having an inner height equal to an integer multiple of one-half of the exciting wavelength, the plasma generation means being constructed such that a gas injected from one end of the nonmetallic pipe is excited into a plasma state by a microwave when the gas is in a region of the nonmetallic pipe which is not covered with the conductors and such that the gas in the plasma state is discharged from the other end of the nonmetallic pipe.
摘要翻译：由ZrB2膜制成的阻挡膜通过使用具有等离子体产生装置的涂覆装置形成，所述等离子体产生装置包括同轴谐振腔和用于激发同轴谐振腔的微波供应电路，所述同轴谐振腔包括设置在周边周围的间隔开的导体的用于反应气体引入的非金属管，所述同轴谐振腔的内部高度等于所述激发波长的二分之一的整数倍，所述等离子体产生装置被构造成使得从所述非金属管的一端注入的气体为当气体处于不被导体覆盖的非金属管的区域中并且等离子体状态的气体从非金属管的另一端排放时，通过微波激发成等离子体状态。

5. 发明授权

US08367542B2 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus 有权
标题翻译：半导体器件制造方法和半导体器件制造装置
公开(公告)号：US08367542B2
公开(公告)日：2013-02-05
申请号：US13273612
申请日：2011-10-14
申请人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
发明人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/28556 , C23C16/30 , C23C16/45542 , H01L21/28562 , H01L21/76829 , H01L21/76831 , H01L21/76843 , H01L21/76849 , Y10T29/49146 , Y10T29/49162
摘要： A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer(11) on a semiconductor substrate (2) including an element region (2b), a recess step of forming a recess (12) in the insulation layer (11), a metal layer step of embedding a metal layer (13) in the recess (12), a planarization step of planarizing a surface of the insulation layer (11) and a surface of the metal layer (13) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer (16) containing at least zirconium element and nitrogen element on the surface of the insulation layer (11) and the surface of the metal layer (13) after the planarization step.
摘要翻译：一种用于制造提高金属盖层的可靠性和生产率的半导体器件的方法。该方法包括在包括元件区域（2b）的半导体衬底（2）上叠加绝缘层（11）的绝缘层步骤，在绝缘层（11）中形成凹陷（12）的凹陷步骤，金属在所述凹部（12）中嵌入金属层（13）的层叠工序，使所述绝缘层（11）的表面和所述金属层（13）的表面平坦化的平坦化工序，在平坦化步骤之后，在所述绝缘层（11）的表面和所述金属层（13）的表面上形成至少含有锆元素和氮元素的金属覆盖层（16）的金属覆盖层工序。

6. 发明申请

US20120031650A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 有权
标题翻译：半导体器件制造方法和半导体器件制造设备
公开(公告)号：US20120031650A1
公开(公告)日：2012-02-09
申请号：US13273612
申请日：2011-10-14
申请人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
发明人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
IPC分类号： H05K1/00 , H05K3/30 , H01L21/768
CPC分类号： H01L21/28556 , C23C16/30 , C23C16/45542 , H01L21/28562 , H01L21/76829 , H01L21/76831 , H01L21/76843 , H01L21/76849 , Y10T29/49146 , Y10T29/49162
摘要： A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer(11) on a semiconductor substrate (2) including an element region (2b), a recess step of forming a recess (12) in the insulation layer (11), a metal layer step of embedding a metal layer (13) in the recess (12), a planarization step of planarizing a surface of the insulation layer (11) and a surface of the metal layer (13) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer (16) containing at least zirconium element and nitrogen element on the surface of the insulation layer (11) and the surface of the metal layer (13) after the planarization step.
摘要翻译：一种用于制造提高金属盖层的可靠性和生产率的半导体器件的方法。该方法包括在包括元件区域（2b）的半导体衬底（2）上叠加绝缘层（11）的绝缘层步骤，在绝缘层（11）中形成凹陷（12）的凹陷步骤，金属在所述凹部（12）中嵌入金属层（13）的层叠工序，使所述绝缘层（11）的表面和所述金属层（13）的表面平坦化的平坦化工序，在平坦化步骤之后，在所述绝缘层（11）的表面和所述金属层（13）的表面上形成至少含有锆元素和氮元素的金属覆盖层（16）的金属覆盖层工序。

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