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1. 发明授权

US07736462B2 Installation for processing a substrate 有权
标题翻译：安装处理基板
公开(公告)号：US07736462B2
公开(公告)日：2010-06-15
申请号：US10542075
申请日：2004-01-13
申请人： Jurgen Weichart
发明人： Jurgen Weichart
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： C25D7/123 , C25D17/001 , C25D17/06 , C25D17/12 , Y10T279/23
摘要： The invention relates to an installation, in particular a vacuum processing installation for processing a substrate (130), in particular a semiconductor wafer, comprising a processing station. Said installation comprises a frame (110), to which is clamped a carrier (120), for holding and/or transporting the substrate (130), whereby the latter (130) can be fastened by its entire surface to said carrier (120). The processing station preferably comprises a chuck electrode (140) with a flat outer surface (141) and the carrier (120) can be positioned parallel and adjacent to said outer surface (141) of the chuck electrode (140). The carrier is composed in particular of a non-conductive dielectric material and is provided on one side with a conductive layer (122), in such a way that the chuck electrode (140) and the carrier (120) form an electrostatic chuck.
摘要翻译：本发明涉及一种装置，特别是用于处理包括处理站的基板（130），特别是半导体晶片的真空处理装置。所述安装件包括框架（110），夹紧支架（120），用于保持和/或传送基板（130），由此后者（130）可以通过其整个表面固定到所述托架（120）上，。处理站优选地包括具有平坦的外表面（141）的卡盘电极（140），并且所述载体（120）可以平行且邻近所述卡盘电极（140）的所述外表面（141）定位。载体特别是由非导电介电材料组成，并且在一侧设置有导电层（122），使得卡盘电极（140）和载体（120）形成静电卡盘。

2. 发明申请

US20090111216A1 APPLICATION OF HIPIMS TO THROUGH SILICON VIA METALLIZATION IN THREE-DIMENSIONAL WAFER PACKAGING 有权
标题翻译：通过在三维水包装中的金属化将HIPIMS应用于硅
公开(公告)号：US20090111216A1
公开(公告)日：2009-04-30
申请号：US12257570
申请日：2008-10-24
申请人： Jurgen Weichart , Stanislav Kadlec
发明人： Jurgen Weichart , Stanislav Kadlec
IPC分类号： H01L21/3205 , H01L21/02 , C25B9/00
CPC分类号： H01L21/76898 , C23C14/046 , C23C14/345 , H01J37/32027 , H01J37/32091 , H01J37/3408 , H01J37/3467 , H01L21/2855
摘要： A method of magnetically enhanced sputtering an electrically-conductive material onto interior surfaces of a trench described herein includes providing a magnetic field adjacent to a target formed at least in part from the electrically-conductive material, and applying a DC voltage between an anode and the target as a plurality of pulses. A high-frequency signal is applied to the pedestal supporting the semiconductor substrate to generate a self-bias field adjacent to the semiconductor substrate. The high-frequency signal is applied to the pedestal in pulses, during periods of time that overlap with the periods during which the DC voltage pulses are applied. The periods of time that the high-frequency signals are applied include a duration that extends beyond termination of the DC voltage pulse applied between the anode and the target. During each DC voltage pulse the electrically-conductive material is sputter deposited onto the side walls of the trench formed in the semiconductor substrate.
摘要翻译：将导电材料磁性增强溅射到本文所述的沟槽的内表面上的方法包括提供与至少部分地从导电材料形成的靶相邻的磁场，以及在阳极和目标为多个脉冲。将高频信号施加到支撑半导体衬底的基座，以产生与半导体衬底相邻的自偏置场。在与施加直流电压脉冲的周期重叠的时间段期间，高频信号以脉冲方式施加到基座。施加高频信号的时间段包括延伸超过在阳极和目标之间施加的DC电压脉冲的终止的持续时间。在每个DC电压脉冲期间，导电材料被溅射沉积到形成在半导体衬底中的沟槽的侧壁上。

3. 发明申请

US20090145554A1 Procedure and device for the production of a plasma 有权
标题翻译：用于生产等离子体的方法和装置
公开(公告)号：US20090145554A1
公开(公告)日：2009-06-11
申请号：US12315608
申请日：2008-12-04
申请人： Jurgen Weichart , Dominik Wimo Amman , Siegfried Krassnitzer
发明人： Jurgen Weichart , Dominik Wimo Amman , Siegfried Krassnitzer
IPC分类号： H01L21/3065
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3266
摘要： The present invention concerns a procedure for the production of a plasma that is at least co-produced in the vacuum chamber (1a) of a vacuum recipient (1) of a device suitable for plasma processing with at least one induction coil (2) carrying an alternating current, where the gas used to produce the plasma is fed into the vacuum chamber (1a) through at least one inlet (3) and the vacuum chamber (1a) is subject to the pumping action of at least one pump arrangement (4), and where a possibly pulsed direct current is also applied to the induction coil (2) in order to influence the plasma density.
摘要翻译：本发明涉及一种用于生产等离子体的方法，所述等离子体至少在适于等离子体处理的装置的真空容器（1）的真空室（1a）中共同生产，其中至少一个感应线圈（2）承载交流电，其中用于产生等离子体的气体通过至少一个入口（3）进入真空室（1a），并且真空室（1a）受到至少一个泵装置（4）的泵送作用），并且其中也可能脉冲的直流电流也施加到感应线圈（2）以便影响等离子体密度。

4. 发明申请

US20090134011A1 Method for producing a directional layer by cathode sputtering, and device for implementing the method 有权
标题翻译：通过阴极溅射制造定向层的方法，以及用于实施该方法的装置
公开(公告)号：US20090134011A1
公开(公告)日：2009-05-28
申请号：US11968300
申请日：2008-01-02
申请人： Hartmut Rohrmann , Hanspeter Friedli , Jurgen Weichart , Stanislav Kadlec , Martin Dubs
发明人： Hartmut Rohrmann , Hanspeter Friedli , Jurgen Weichart , Stanislav Kadlec , Martin Dubs
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , G11B5/851 , H01J37/34 , H01J37/3447
摘要： For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface (4), the coating process takes place in a manner whereby particles emanating from a target surface (6) impinge predominantly from directions at which their projection onto the substrate surface (4) lies within a preferred angular range surrounding the nominal direction. This is achieved for instance by positioning a collimator (8), encompassing plates (9) that extend at a normal angle to the substrate surface (4) parallel to the nominal direction in front of the substrate surface (4), but in lieu of or in addition to such positioning the location or movement of the substrate surface (4) relative to the target surface (6) can also be suitably adjusted or controlled.
摘要翻译：为了产生例如具有恒定标称方向性的定向层，例如具有优选磁化方向的低保持层或用于通过阴极溅射在衬底表面（4）上的这种层的支撑层，涂覆过程发生在从目标表面（6）发出的颗粒主要从其在衬底表面（4）上的投影位于围绕标称方向的优选角度范围内的方向入射的方式。这例如通过定位准直器（8）来实现，该准直器（8）围绕与基板表面（4）平行于基板表面（4）的标称方向的法向角度延伸的板（9），但代替或者除了这样的定位之外，还可以适当地调整或控制衬底表面（4）相对于目标表面（6）的位置或移动。

5. 发明申请

US20080135400A1 ARC SUPPRESSION AND PULSING IN HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS) 有权
标题翻译：高功率脉冲磁控溅射中的电弧抑制和脉冲（HIPIMS）
公开(公告)号：US20080135400A1
公开(公告)日：2008-06-12
申请号：US11954507
申请日：2007-12-12
申请人： Stanislav Kadlec , Jurgen Weichart
发明人： Stanislav Kadlec , Jurgen Weichart
IPC分类号： C23C14/35
CPC分类号： C23C14/3485 , C23C14/35 , H01J37/32944 , H01J37/3408 , H01J37/3444 , H01J37/3467
摘要： An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.
摘要翻译：提供了一种用于产生靶的溅射以在基底上产生涂层的装置。该装置包括包括阴极和阳极的磁控管。电源可操作地连接到磁控管，并且至少一个电容器可操作地连接到电源。该装置还包括可操作地连接到至少一个电容器的电感。还提供第一开关和第二开关。第一开关可操作地将电源连接到磁控管以对磁控管充电，并且第一开关被配置为根据第一脉冲对磁控管充电。第二开关可操作地连接以放电磁控管。第二开关被配置为根据第二脉冲放电磁控管。

6. 发明申请

US20060108231A1 Installation for processing a substrate 有权
标题翻译：安装处理基板
公开(公告)号：US20060108231A1
公开(公告)日：2006-05-25
申请号：US10542075
申请日：2004-07-13
申请人： Jurgen Weichart
发明人： Jurgen Weichart
IPC分类号： C25D5/56
CPC分类号： C25D7/123 , C25D17/001 , C25D17/06 , C25D17/12 , Y10T279/23
摘要： The invention relates to an installation, in particular a vacuum processing installation for processing a substrate (130), in particular a semiconductor wafer, comprising a processing station. Said installation comprises a frame (110), to which is clamped a carrier (120), for holding and/or transporting the substrate (130), whereby the latter (130) can be fastened by its entire surface to said carrier (120). The processing station preferably comprises a chuck electrode (140) with a flat outer surface (141) and the carrier (120) can be positioned parallel and adjacent to said outer surface (141) of the chuck electrode (140). The carrier is composed in particular of a non-conductive dielectric material and is provided on one side with a conductive layer (122), in such a way that the chuck electrode (140) and the carrier (120) form an electrostatic chuck.
摘要翻译：本发明涉及一种装置，特别是用于处理包括处理站的基板（130），特别是半导体晶片的真空处理装置。所述安装件包括框架（110），夹紧支架（120），用于保持和/或传送基板（130），由此后者（130）可以通过其整个表面紧固到所述托架（120）上，。处理站优选地包括具有平坦的外表面（141）的卡盘电极（140），并且所述载体（120）可以平行且邻近所述卡盘电极（140）的所述外表面（141）定位。载体特别是由非导电介电材料组成，并且在一侧设置有导电层（122），使得卡盘电极（140）和载体（120）形成静电卡盘。

7. 发明申请

US20090252892A1 PROCESSING CHAMBER 审中-公开
标题翻译：加工室
公开(公告)号：US20090252892A1
公开(公告)日：2009-10-08
申请号：US12409594
申请日：2009-03-24
申请人： Jurgen Weichart
发明人： Jurgen Weichart
IPC分类号： C23C16/50 , C23C16/00 , H01L21/677
CPC分类号： C23C16/458 , H01L21/67201 , H01L21/67748 , H01L21/67751
摘要： A process apparatus for treatment of a substrate comprising a load chamber for loading the substrate, a process chamber for processing the substrate, a sealing plane separating the process chamber from the load chamber and means for vertically moving the substrate from the load chamber to the process chamber, and a method for treating the substrate are provided. The load chamber is located in one of the lower and upper portions of the process apparatus, and the process chamber is located in the other of the lower and upper portions of the process apparatus. The process apparatus and method of the present invention will provide easy maintenance and reduced costs by reducing the number of movements for loading the substrate.
摘要翻译：一种用于处理基板的处理装置，包括用于装载基板的装载室，用于处理基板的处理室，将处理室与装载室分离的密封平面以及用于将基板从装载室垂直移动到处理装置室，以及处理基板的方法。装载室位于处理装置的下部和上部之一中，并且处理室位于处理装置的下部和上部的另一个中。本发明的处理装置和方法将通过减少用于装载基板的移动次数来提供容易的维护和降低的成本。

8. 发明申请

US20060065525A1 Method for manufacturing magnetron coated substrates and magnetron sputter source 有权
标题翻译：制造磁控溅射基板和磁控溅射源的方法
公开(公告)号：US20060065525A1
公开(公告)日：2006-03-30
申请号：US10952331
申请日：2004-09-28
申请人： Jurgen Weichart
发明人： Jurgen Weichart
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： H01J37/3408 , C23C14/35 , H01J37/3299 , H01J37/3455
摘要： Method for manufacturing magnetron coated substrates, in which along the target and on its backside pointing from the substrate, a magnet arrangement is present by which along the sputter surface of the target at least one closed loop of a tunnel shaped magnetron magnetic field is generated, characterized in that for setting the sputter rate distribution the distance of a part of the magnet arrangement to the backside of the target is changed.
摘要翻译：制造磁控管涂覆的基板的方法，其中沿着靶并且在其从基板指向的背面上存在磁体布置，沿着靶的溅射表面，产生隧道状磁控管磁场的至少一个闭环，其特征在于，为了设定溅射速度分布，磁体装置的一部分到靶的背面的距离改变。

9. 发明授权

US08778144B2 Method for manufacturing magnetron coated substrates and magnetron sputter source 有权
标题翻译：制造磁控溅射基板和磁控溅射源的方法
公开(公告)号：US08778144B2
公开(公告)日：2014-07-15
申请号：US10952331
申请日：2004-09-28
申请人： Jurgen Weichart
发明人： Jurgen Weichart
IPC分类号： C23C14/00 , C23C14/32 , C25B9/00 , C25B11/00 , C25B13/00
CPC分类号： H01J37/3408 , C23C14/35 , H01J37/3299 , H01J37/3455
摘要： Method for manufacturing magnetron coated substrates, in which along the target and on its backside pointing from the substrate, a magnet arrangement is present by which along the sputter surface of the target at least one closed loop of a tunnel shaped magnetron magnetic field is generated, characterized in that for setting the sputter rate distribution the distance of a part of the magnet arrangement to the backside of the target is changed.
摘要翻译：制造磁控管涂覆的基板的方法，其中沿着靶并且在其从基板指向的背面上存在磁体布置，沿着靶的溅射表面，产生隧道状磁控管磁场的至少一个闭环，其特征在于，为了设定溅射速度分布，磁体装置的一部分到靶的背面的距离改变。

10. 发明授权

US08475634B2 Application of HIPIMS to through silicon via metallization in three-dimensional wafer packaging 有权
标题翻译： HIPIMS在三维晶圆封装中通过金属化的应用
公开(公告)号：US08475634B2
公开(公告)日：2013-07-02
申请号：US12257570
申请日：2008-10-24
申请人： Jurgen Weichart , Stanislav Kadlec
发明人： Jurgen Weichart , Stanislav Kadlec
IPC分类号： C23C14/34
CPC分类号： H01L21/76898 , C23C14/046 , C23C14/345 , H01J37/32027 , H01J37/32091 , H01J37/3408 , H01J37/3467 , H01L21/2855
摘要： A method of magnetically enhanced sputtering an electrically-conductive material onto interior surfaces of a trench described herein includes providing a magnetic field adjacent to a target formed at least in part from the electrically-conductive material, and applying a DC voltage between an anode and the target as a plurality of pulses. A high-frequency signal is applied to the pedestal supporting the semiconductor substrate to generate a self-bias field adjacent to the semiconductor substrate. The high-frequency signal is applied to the pedestal in pulses, during periods of time that overlap with the periods during which the DC voltage pulses are applied. The periods of time that the high-frequency signals are applied include a duration that extends beyond termination of the DC voltage pulse applied between the anode and the target. During each DC voltage pulse the electrically-conductive material is sputter deposited onto the side walls of the trench formed in the semiconductor substrate.
摘要翻译：将导电材料磁性增强溅射到本文所述的沟槽的内表面上的方法包括提供与至少部分地从导电材料形成的靶相邻的磁场，以及在阳极和目标为多个脉冲。将高频信号施加到支撑半导体衬底的基座，以产生与半导体衬底相邻的自偏置场。在与施加直流电压脉冲的周期重叠的时间段期间，高频信号以脉冲方式施加到基座。施加高频信号的时间段包括延伸超过在阳极和目标之间施加的DC电压脉冲的终止的持续时间。在每个DC电压脉冲期间，导电材料被溅射沉积到形成在半导体衬底中的沟槽的侧壁上。

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